VB1240B - описание и поиск аналогов

VB1240B www.VBsemi.com N-Channel 20 V (D-S) MOSFET FEATURES PRODUCT SUMMARY VDS (V) 20 TrenchFET power MOSFET RDS(on) max. ( ) at VGS = 4.5V 0.020 Low on-resistance RDS(on) max. ( ) at VGS = 2.5V 0.025 100 % Rg tested Qg typ. (nC 4.0 Material categorization ID (A) a, e 7 for definitions of compliance please see Configuration Single D SOT-23 (3) G 1 G

VB1240X www.VBsemi.com N-Channel 20V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A)a, g Qg (Typ.) Definition = 4.5V 8 TrenchFET Gen III Power MOSFET at V 0.014 GS 20 9nC 100 % Rg Tested 0.018 7 at V = 2.5V GS 100 % UIS Tested Compliant to RoHS Directive 2002/95/EC D (SOT-23) G 1 G 3 D

VB1240 www.VBsemi.com N-Channel 20 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A)e Qg (Typ.) Definition 0.0318 at VGS = 4.5 V TrenchFET Power MOSFET 6a 100 % Rg Tested 20 0.0356 at VGS = 2.5 V 6a 8.8 nC Compliant to RoHS Directive 2002/95/EC 0.0414 at VGS = 1.8 V 5.6 APPLICATIONS DC/D

NSBC114EPDXV6T1G, NSVBC114EPDXV6T1G Series Dual Bias Resistor Transistors NPN and PNP Silicon Surface Mount Transistors with Monolithic Bias http //onsemi.com Resistor Network The BRT (Bias Resistor Transistor) contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base-emitter resistor. These digital transistors are SOT-