FDB120N10 - описание и поиск аналогов

June 2009 FDB120N10 tm N-Channel PowerTrench MOSFET 100V, 74A, 12m Features Description RDS(on) = 9.7m ( Typ.)@ VGS = 10V, ID = 74A This N-Channel MOSFET is produced using Fairchild Semicon- ductor s advanced PowerTrench process that has been espe- Fast Switching Speed cially tailored to minimize the on-state resistance and yet maintain superior switching performance.

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

isc N-Channel MOSFET Transistor FDB120N10 FEATURES Drain Current I = 74A@ T =25 D C Drain Source Voltage V = 100V(Min) DSS Static Drain-Source On-Resistance R = 12m (Max) @ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solen

November 2007 UniFETTM FDB12N50F tm N-Channel MOSFET, FRFET 500V, 11.5A, 0.7 Features Description RDS(on) = 0.59 ( Typ.)@ VGS = 10V, ID = 6A These N-Channel enhancement mode power field effect transis- tors are produced using Fairchild s proprietary, planar stripe, Low gate charge ( Typ. 21nC) DMOS technology. Low Crss ( Typ. 11pF) This advance technology has b

June 2007 UniFETTM FDB12N50TM tm N-Channel MOSFET 500V, 11.5A, 0.65 Features Description RDS(on) = 0.55 ( Typ.)@ VGS = 10V, ID = 6A These N-Channel enhancement mode power field effect transistors are produced using Fairchild s proprietary, planar Low gate charge ( Typ. 22nC) stripe, DMOS technology. Low Crss ( Typ. 12pF) This advanced technology has been especi

March 2008 TM Ultra FRFET FDB12N50U tm N-Channel MOSFET, FRFET 500V, 10A, 0.8 Features Description RDS(on) = 0.65 ( Typ.)@ VGS = 10V, ID = 5A These N-Channel enhancement mode power field effect transis- tors are produced using Fairchild s proprietary, planar stripe, Low gate charge ( Typ. 21nC) DMOS technology. Low Crss ( Typ. 11pF) This advance technology has

FDB12N50F N-Channel UniFETTM FRFET MOSFET 500 V, 11.5 A, 700 m Description Features UniFETTM MOSFET is ON Semiconductor s high voltage RDS(on) = 590 m (Typ.) @ VGS = 10 V, ID = 6 A MOSFET family based on planar stripe and DMOS technology. This MOSFET is tailored to reduce on-state resistance, and to Low Gate Charge (Typ. 21 nC) provide better switching performa

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

FDB12N50F www.VBsemi.tw Power MOSFET N-Channel 650V (D-S) FEATURES PRODUCT SUMMARY VDS (V) at TJ max. 670 Low figure-of-merit (FOM) Ron x Qg Low input capacitance (Ciss) RDS(on) max. at 25 C ( ) VGS = 10 V 0.67 Reduced switching and conduction losses Qg max. (nC) 41 Ultra low gate charge (Qg) Qgs (nC) 5 Avalanche energy rated (UIS) Qgd (nC) 22 Configurati