TSF16N60MR Даташит. Основные параметры и характеристики. Поиск аналогов
Наименование прибора: TSF16N60MR
Тип транзистора: MOSFET
Полярность: N
Pdⓘ - Максимальная рассеиваемая мощность: 40 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 600 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 30 V
|Id|ⓘ - Максимально допустимый постоянный ток стока: 16 A
Tjⓘ - Максимальная температура канала: 150 °C
trⓘ - Время нарастания: 121 ns
Cossⓘ - Выходная емкость: 225 pf
Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.47 Ohm
Тип корпуса: TO220F
- подбор MOSFET транзистора по параметрам
TSF16N60MR Datasheet (PDF)
tsf16n60mr.pdf

TSF16N60MR 600V N-Channel MOSFET General Description Features This Power MOSFET is produced using Truesemis 16A,600V,Max.RDS(on)=0.47 @ VGS =10V advanced planar stripe DMOS technology. This advanced technology has been especially tailored to Low gate charge(typical 50nC)minimize on-state resistance, provide superior switching High ruggednessperformance, a
tsf16n65mr.pdf

TSF16N65MR 650V N-Channel MOSFET General Description Features This Power MOSFET is produced using Truesemis 16A,650V,Max.RDS(on)=0.52 @ =10V advanced planar stripe DMOS technology. This advanced technology has been especially tailored to VGS minimize on-state resistance, provide superior switching Low gate charge(typical 50nC)performance, and withstand high e
tsf16n50mr.pdf

TSF16N50MR500V N-Channel MOSFETGeneral DescriptionFeaturesThis Power MOSFET is produced using Truesemis 16.0A,500V,Max.RDS(on)=0.4 @ VGS =10Vadvanced planar stripe DMOS technology.This advanced technology has been especially tailored to Low gate charge(typical 32nC)minimize on-state resistance, provide superior switching High ruggednessperformance, and withs
Другие MOSFET... FMM50-025TF , FMM60-02TF , FMM75-01F , FMP26-02P , FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , 5N60 , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , GMM3x180-004X2-SMD , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL .
History: HGK018N06S | IPD60R950C6 | FDD6635 | 2N6657 | SWH040R03VLT | SI6463BDQ | DMNH10H028SCT
History: HGK018N06S | IPD60R950C6 | FDD6635 | 2N6657 | SWH040R03VLT | SI6463BDQ | DMNH10H028SCT



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