YJL2304A MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: YJL2304A
Маркировка: S4.
Тип транзистора: MOSFET
Полярность: N
Максимальная рассеиваемая мощность (Pd): 1 W
Предельно допустимое напряжение сток-исток |Uds|: 30 V
Предельно допустимое напряжение затвор-исток |Ugs|: 20 V
Пороговое напряжение включения |Ugs(th)|: 2.2 V
Максимально допустимый постоянный ток стока |Id|: 3.6 A
Максимальная температура канала (Tj): 150 °C
Общий заряд затвора (Qg): 4.2 nC
Время нарастания (tr): 48 ns
Выходная емкость (Cd): 67 pf
Сопротивление сток-исток открытого транзистора (Rds): 0.039 Ohm
Тип корпуса: SOT23
YJL2304A Datasheet (PDF)
yjl2304a.pdf
RoHS COMPLIANT YJL2304A N-Channel Enhancement Mode Field Effect Transistor Product Summary V 30V DS I 3.6A D R ( at V =10V) 39 mohm DS(ON) GS R ( at V =4.5V) 52 mohm DS(ON) GSGeneral Description Trench Power LV MOSFET technology High Power and current handing capability Applications PWM application Load switch Absolute M
yjl2305a.pdf
RoHS COMPLIANT YJL2305A P-Channel Enhancement Mode Field Effect Transistor Product Summary V -15V DS I -5.6A D R ( at V =-4.5V) 36.4 mohm DS(ON) GS R ( at V =-2.5V) 53.0 mohm DS(ON) GS R ( at V =-1.8V) 70.0 mohm DS(ON) GSGeneral Description Trench Power LV MOSFET technology High Density Cell Design for Low R DS(ON) High
yjl2303a.pdf
RoHS COMPLIANT YJL2303A P-Channel Enhancement Mode Field Effect Transistor Product Summary V -30V DS I -3.0A D R ( at V =-10V) 85 mohm DS(ON) GS R ( at V =-4.5V) 105 mohm DS(ON) GSGeneral Description Trench Power LV MOSFET technology High density cell design for Low R DS(ON) High Speed switching Applications PMW applicatio
yjl2302b.pdf
RoHS COMPLIANT YJL2302B N-Channel Enhancement Mode Field Effect Transistor Product Summary V 20V DS I 3.0A D R ( at V =4.5V) 52 mohm DS(ON) GS R ( at V =2.5V) 80 mohm DS(ON) GSGeneral Description Trench Power LV MOSFET technology High Power and current handing capability Applications PWM application Load switch Absolute Ma
yjl2301g.pdf
RoHS COMPLIANT YJL2301G P-Channel Enhancement Mode Field Effect Transistor Product Summary V -15V DS I -2.0A D R ( at V =-4.5V) 100 mohm DS(ON) GS R ( at V =-2.5V) 130 mohm DS(ON) GS R ( at V =-1.8V) 230 mohm DS(ON) GSGeneral Description Trench Power LV MOSFET technology Low R DS(ON) Low Gate Charge Applications
yjl2305b.pdf
RoHS COMPLIANT YJL2305B P-Channel Enhancement Mode Field Effect Transistor Product Summary V -20V DS I -5.4A D R ( at V =-4.5V) 42 mohm DS(ON) GS R ( at V =-2.5V) 55 mohm DS(ON) GS R ( at V =-1.8V) 75 mohm DS(ON) GSGeneral Description Trench Power LV MOSFET technology High Density Cell Design for Low R DS(ON) High Speed
yjl2301d.pdf
RoHS COMPLIANT YJL2301D P-Channel Enhancement Mode Field Effect Transistor Product Summary V -15V DS I -3.8A D R ( at V =-4.5V) 52 mohm DS(ON) GS R ( at V =-2.5V) 78 mohm DS(ON) GS R ( at V =-1.8V) 110 mohm DS(ON) GSGeneral Description Trench Power LV MOSFET technology Low R DS(ON) Low Gate Charge Applications Vi
yjl2301f.pdf
RoHS COMPLIANT YJL2301F P-Channel Enhancement Mode Field Effect Transistor Product Summary V -20V DS I -2A D R ( at V =-4.5V) 120 mohm DS(ON) GS R ( at V =-2.5V) 150 mohm DS(ON) GS R ( at V =-1.8V) 250 mohm DS(ON) GSGeneral Description Trench Power LV MOSFET technology Low R DS(ON) Low Gate Charge Applications Vi
yjl2302a.pdf
RoHS COMPLIANT YJL2302A N-Channel Enhancement Mode Field Effect Transistor Product Summary V 20V DS I 4.3A D R ( at V =4.5V) 27 mohm DS(ON) GS R ( at V =2.5V) 37 mohm DS(ON) GSGeneral Description Trench Power LV MOSFET technology High Power and current handing capability Applications PWM application Load switch Absolute M
yjl2300a.pdf
RoHS COMPLIANT YJL2300A N-Channel Enhancement Mode Field Effect Transistor Product Summary V 20V DS I 4.5A D R ( at V =4.5V) 25 mohm DS(ON) GS R ( at V =2.5V) 32 mohm DS(ON) GS R ( at V =1.8V) 49 mohm DS(ON) GSGeneral Description Trench Power LV MOSFET technology High Power and current handing capability Applications PW
yjl2301c.pdf
RoHS COMPLIANT YJL2301C P-Channel Enhancement Mode Field Effect Transistor Product Summary V -20V DS I -3.4A D R ( at V =-4.5V) 64 mohm DS(ON) GS R ( at V =-2.5V) 80 mohm DS(ON) GS R ( at V =-1.8V) 110 mohm DS(ON) GSGeneral Description Trench Power LV MOSFET technology High Power and Current handing capability Low Gate Ch
Другие MOSFET... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , MMIS60R580P , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
Список транзисторов
Обновления
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