YJL2312A - описание и поиск аналогов

 ..1. Size:562K  cn yangzhou yangjie elec
 yjl2312a.pdf 

RoHS COMPLIANT YJL2312A N-Channel Enhancement Mode Field Effect Transistor Product Summary V 20V DS I 6.8A D R ( at V =4.5V) 18 mohm DS(ON) GS R ( at V =2.5V) 22 mohm DS(ON) GS R ( at V =1.8V) 39 mohm DS(ON) GS General Description Trench Power LV MOSFET technology High Power and current handing capability Applications PW

 0.1. Size:1343K  cn yangzhou yangjie elec
 yjl2312al.pdf 

RoHS COMPLIANT YJL2312AL N-Channel Enhancement Mode Field Effect Transistor Product Summary V 20V DS I 7.6A D R ( at V =4.5V) 17mohm DS(ON) GS R ( at V =2.5V) 20mohm DS(ON) GS R ( at V =1.8V) 35mohm DS(ON) GS 100% V Tested DS General Description Trench Power LV MOSFET technology High Power and current handing capabilit

 9.1. Size:542K  cn yangzhou yangjie elec
 yjl2304a.pdf 

RoHS COMPLIANT YJL2304A N-Channel Enhancement Mode Field Effect Transistor Product Summary V 30V DS I 3.6A D R ( at V =10V) 39 mohm DS(ON) GS R ( at V =4.5V) 52 mohm DS(ON) GS General Description Trench Power LV MOSFET technology High Power and current handing capability Applications PWM application Load switch Absolute M

 9.2. Size:650K  cn yangzhou yangjie elec
 yjl2305a.pdf 

RoHS COMPLIANT YJL2305A P-Channel Enhancement Mode Field Effect Transistor Product Summary V -15V DS I -5.6A D R ( at V =-4.5V) 36.4 mohm DS(ON) GS R ( at V =-2.5V) 53.0 mohm DS(ON) GS R ( at V =-1.8V) 70.0 mohm DS(ON) GS General Description Trench Power LV MOSFET technology High Density Cell Design for Low R DS(ON) High

 9.3. Size:628K  cn yangzhou yangjie elec
 yjl2303a.pdf 

RoHS COMPLIANT YJL2303A P-Channel Enhancement Mode Field Effect Transistor Product Summary V -30V DS I -3.0A D R ( at V =-10V) 85 mohm DS(ON) GS R ( at V =-4.5V) 105 mohm DS(ON) GS General Description Trench Power LV MOSFET technology High density cell design for Low R DS(ON) High Speed switching Applications PMW applicatio

 9.4. Size:564K  cn yangzhou yangjie elec
 yjl2302b.pdf 

RoHS COMPLIANT YJL2302B N-Channel Enhancement Mode Field Effect Transistor Product Summary V 20V DS I 3.0A D R ( at V =4.5V) 52 mohm DS(ON) GS R ( at V =2.5V) 80 mohm DS(ON) GS General Description Trench Power LV MOSFET technology High Power and current handing capability Applications PWM application Load switch Absolute Ma

 9.5. Size:618K  cn yangzhou yangjie elec
 yjl2301g.pdf 

RoHS COMPLIANT YJL2301G P-Channel Enhancement Mode Field Effect Transistor Product Summary V -15V DS I -2.0A D R ( at V =-4.5V) 100 mohm DS(ON) GS R ( at V =-2.5V) 130 mohm DS(ON) GS R ( at V =-1.8V) 230 mohm DS(ON) GS General Description Trench Power LV MOSFET technology Low R DS(ON) Low Gate Charge Applications

 9.6. Size:611K  cn yangzhou yangjie elec
 yjl2305b.pdf 

RoHS COMPLIANT YJL2305B P-Channel Enhancement Mode Field Effect Transistor Product Summary V -20V DS I -5.4A D R ( at V =-4.5V) 42 mohm DS(ON) GS R ( at V =-2.5V) 55 mohm DS(ON) GS R ( at V =-1.8V) 75 mohm DS(ON) GS General Description Trench Power LV MOSFET technology High Density Cell Design for Low R DS(ON) High Speed

 9.7. Size:593K  cn yangzhou yangjie elec
 yjl2301d.pdf 

RoHS COMPLIANT YJL2301D P-Channel Enhancement Mode Field Effect Transistor Product Summary V -15V DS I -3.8A D R ( at V =-4.5V) 52 mohm DS(ON) GS R ( at V =-2.5V) 78 mohm DS(ON) GS R ( at V =-1.8V) 110 mohm DS(ON) GS General Description Trench Power LV MOSFET technology Low R DS(ON) Low Gate Charge Applications Vi

 9.8. Size:579K  cn yangzhou yangjie elec
 yjl2301f.pdf 

RoHS COMPLIANT YJL2301F P-Channel Enhancement Mode Field Effect Transistor Product Summary V -20V DS I -2A D R ( at V =-4.5V) 120 mohm DS(ON) GS R ( at V =-2.5V) 150 mohm DS(ON) GS R ( at V =-1.8V) 250 mohm DS(ON) GS General Description Trench Power LV MOSFET technology Low R DS(ON) Low Gate Charge Applications Vi

 9.9. Size:527K  cn yangzhou yangjie elec
 yjl2302a.pdf 

RoHS COMPLIANT YJL2302A N-Channel Enhancement Mode Field Effect Transistor Product Summary V 20V DS I 4.3A D R ( at V =4.5V) 27 mohm DS(ON) GS R ( at V =2.5V) 37 mohm DS(ON) GS General Description Trench Power LV MOSFET technology High Power and current handing capability Applications PWM application Load switch Absolute M

 9.10. Size:535K  cn yangzhou yangjie elec
 yjl2300a.pdf 

RoHS COMPLIANT YJL2300A N-Channel Enhancement Mode Field Effect Transistor Product Summary V 20V DS I 4.5A D R ( at V =4.5V) 25 mohm DS(ON) GS R ( at V =2.5V) 32 mohm DS(ON) GS R ( at V =1.8V) 49 mohm DS(ON) GS General Description Trench Power LV MOSFET technology High Power and current handing capability Applications PW

 9.11. Size:519K  cn yangzhou yangjie elec
 yjl2301c.pdf 

RoHS COMPLIANT YJL2301C P-Channel Enhancement Mode Field Effect Transistor Product Summary V -20V DS I -3.4A D R ( at V =-4.5V) 64 mohm DS(ON) GS R ( at V =-2.5V) 80 mohm DS(ON) GS R ( at V =-1.8V) 110 mohm DS(ON) GS General Description Trench Power LV MOSFET technology High Power and Current handing capability Low Gate Ch