2SK2462 - описание и поиск аналогов

DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK2462 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION The 2SK2462 is N-Channel MOS Field Effect Transistor de- PACKAGE DIMENSIONS (in millimeters) signed for high current switching applications. 10.0 0.3 4.5 0.2 3.2 0.2 FEATURES 2.7 0.2 Low On-Resistance RDS(on)1 = 0.14 MAX. (@ VGS = 10 V, ID = 8.0 A) RDS(on)2

2SK2462 www.VBsemi.tw N-Channel 100-V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET V(BR)DSS (V) RDS(on) ( )ID (A) 175 C Junction Temperature RoHS 0.092 at VGS = 10 V 100 18 COMPLIANT Low Thermal Resistance Package 100 % Rg Tested APPLICATIONS Isolated DC/DC Converters TO-220AB D G S G D S N-Channel MOSFET Top View ABSOLUTE MAXI

N-channel MOS-FET 2SK2469-01MR FAP-II Series 300V 1 5A 30W > Features > Outline Drawing - High Speed Switching - Low On-Resistance - No Secondary Breakdown - Low Driving Power - High Voltage - VGS = 30V Guarantee - Avalanche Proof > Applications - Switching Regulators - UPS - DC-DC converters - General Purpose Power Amplifier > Maximum Ratings and Characteristics > Equival

DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK2461 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION PACKAGE DIMENSIONS The 2SK2461 is N-Channel MOS Field Effect Transistor de- (in millimeters) signed for high speed switching applications. 10.0 0.3 4.5 0.2 3.2 0.2 FEATURES 2.7 0.2 Low On-Resistance RDS(on)1 = 80 m MAX. (@ VGS = 10 V, ID = 10 A) RDS(on)2 =

2SK246 TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK246 For Constant Current, Impedance Unit mm Converter and DC-AC High Input Impedance Amplifier Circuit Applications High breakdown voltage VGDS = -50 V High input impedance I = -1 nA (max) (V = -30 V) GSS GS Maximum Ratings (Ta = = 25 C) = = Characteristics Symbol Rating Unit Gate-dra

2SK2466 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOS) 2SK2466 Chopper Regulator, DC-DC Converter and Motor Drive Unit mm Applications 4 V gate drive Low drain-source ON resistance R = 34 m (typ.) DS (ON) High forward transfer admittance Y = 30 S (typ.) fs Low leakage current IDSS = 100 A (max) (V = 100 V) DS Enhancement-mode

Ordering number ENN6475 N-Channel Silicon MOSFET 2SK2464 Ultrahigh-Speed Switching Applications Features Package Dimensions Low ON resistance. unit mm Ultrahigh-speed switching. 2128 Enables simplified fabrication, high-density mound- [2SK2464] ing, and miniaturization in end products due to the 8.2 surface mountable package. 7.8 6.2 0.6 3 1 2 0.3 1.0 1.0 0.6 2

Transistors Switching (250V, 5A) 2SK2460N FFeatures FExternal dimensions (Units mm) 1) Low on-resistance. 2) Fast switching speed. 3) Wide SOA (safe operating area). 4) Gate-source voltage guaranteed at VGSS = 30V. 5) Easily designed drive circuits. 6) Easy to parallel. FStructure Silicon N-channel MOSFET FAbsolute maximum ratings (Ta = 25_C) FPackaging specifications 114

Transistors Small switching (60V, 2A) 2SK2463 FFeatures FExternal dimensions (Units mm) 1) Low on-resistance. 2) Fast switching speed. 3) Wide SOA (safe operating area). 4) Low-voltage drive (4V). 5) Easily designed drive circuits. 6) Easy to parallel. FStructure Silicon N-channel MOSFET FAbsolute maximum ratings (Ta = 25_C) FPackaging specifications 118 Transistors 2SK2463

INCHANGE Semiconductor isc N-Channel MOSFET Transistor 2SK2461 FEATURES With low gate drive requirements Easy to drive 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Voltage 100 V DSS V Gate-S