TPA60R330M. Аналоги и основные параметры
Наименование производителя: TPA60R330M
Тип транзистора: MOSFET
Полярность: N
Предельные значения
Pd ⓘ - Максимальная рассеиваемая мощность: 31 W
|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 600 V
|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 30 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 11 A
Tj ⓘ - Максимальная температура канала: 150 °C
Электрические характеристики
tr ⓘ - Время нарастания: 61 ns
Cossⓘ - Выходная емкость: 43 pf
RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.33 Ohm
Тип корпуса: TO220F
Аналог (замена) для TPA60R330M
- подборⓘ MOSFET транзистора по параметрам
TPA60R330M даташит
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Другие IGBT... TPV60R160M, TPW60R160M, TPA60R170MFD, TPA60R240M, TPB60R240M, TPC60R240M, TPP60R240M, TPA60R260MFD, IRLB3034, TPA60R360MFD, TPD60R360MFD, TPA60R3K4C, TPP60R3K4C, TPU60R3K4C, TPD60R3K4C, TPA60R530M, TPD60R530M
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Список транзисторов
Обновления
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