TPU60R3K4C. Аналоги и основные параметры
Наименование производителя: TPU60R3K4C
Тип транзистора: MOSFET
Полярность: N
Предельные значения
Pd ⓘ - Максимальная рассеиваемая мощность: 12.3 W
|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 600 V
|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 30 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 1.4 A
Tj ⓘ - Максимальная температура канала: 150 °C
Электрические характеристики
tr ⓘ - Время нарастания: 17 ns
Cossⓘ - Выходная емкость: 25 pf
RDSonⓘ - Сопротивление сток-исток открытого транзистора: 3.4 Ohm
Тип корпуса: TO251
Аналог (замена) для TPU60R3K4C
- подборⓘ MOSFET транзистора по параметрам
TPU60R3K4C даташит
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TPD60R1K4M,TPU60R1K4M Wuxi Unigroup Microelectronics Co.,Ltd 600V Super-junction Power MOSFET DESCRIPTION 600V Super-junction Power MOSFET Super-junction power MOSFET is a revolutionary technology for high voltage power MOSFETs designed according to the SJ principle. The Multi-EPI SJ MOSFET provide an extremely low switching, communication and conduction losses device with highest ro
Другие IGBT... TPC60R240M, TPP60R240M, TPA60R260MFD, TPA60R330M, TPA60R360MFD, TPD60R360MFD, TPA60R3K4C, TPP60R3K4C, EMB04N03H, TPD60R3K4C, TPA60R530M, TPD60R530M, TPU60R530M, TPA60R600MFD, TPD60R600MFD, TPA65R070D, TPB65R070D
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Список транзисторов
Обновления
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