TPU60R3K4C MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: TPU60R3K4C
Тип транзистора: MOSFET
Полярность: N
Pdⓘ - Максимальная рассеиваемая мощность: 12.3 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 600 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 30 V
|Id|ⓘ - Максимально допустимый постоянный ток стока: 1.4 A
Tjⓘ - Максимальная температура канала: 150 °C
trⓘ - Время нарастания: 17 ns
Cossⓘ - Выходная емкость: 25 pf
Rdsⓘ - Сопротивление сток-исток открытого транзистора: 3.4 Ohm
Тип корпуса: TO251
Аналог (замена) для TPU60R3K4C
TPU60R3K4C Datasheet (PDF)
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Список транзисторов
Обновления
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