TPB65R160C. Аналоги и основные параметры

Наименование производителя: TPB65R160C

Тип транзистора: MOSFET

Полярность: N

Предельные значения

Pd ⓘ - Максимальная рассеиваемая мощность: 151 W

|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 650 V

|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 30 V

|Id| ⓘ - Максимально допустимый постоянный ток стока: 20 A

Tj ⓘ - Максимальная температура канала: 150 °C

Электрические характеристики

tr ⓘ - Время нарастания: 14 ns

Cossⓘ - Выходная емкость: 116 pf

RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.16 Ohm

Тип корпуса: TO263

Аналог (замена) для TPB65R160C

- подборⓘ MOSFET транзистора по параметрам

 

TPB65R160C даташит

 ..1. Size:808K  cn wuxi unigroup
 tpa65r160c tpb65r160c tpp65r160c tpr65r160c tpv65r160c.pdf pdf_icon

TPB65R160C

TPA65R160C,TPB65R160C,TPP65R160C,TPR65R160C,TPV65R160C Wuxi Unigroup Microelectronics Co.,Ltd 650V Super-junction Power MOSFET Description 650V Super-junction Power MOSFET Super-junction power MOSFET is a revolutionary technology for high voltage power MOSFETs designed according to the SJ principle. The deep trench SJ MOSFET provide an extremely low switching, communication and conduct

 7.1. Size:832K  cn wuxi unigroup
 tpb65r135mfd tpp65r135mfd tpw65r135mfd.pdf pdf_icon

TPB65R160C

TPB65R135MFD,TPP65R135MFD,TPW65R135MFD Wuxi Unigroup Microelectronics Co.,Ltd 650V Super-junction Power MOSFET Description 650V Super-junction Power MOSFET Super-junction power MOSFET is a revolutionary technology for high voltage power MOSFETs designed according to the SJ principle and pioneered. The Multi-EPI SJ MOSFET provide an extremely fast and robust body diode. Also provide an

 7.2. Size:947K  cn wuxi unigroup
 tpa65r170m tpb65r170m tpc65r170m tpp65r170m tpv65r170m tpw65r170m.pdf pdf_icon

TPB65R160C

TPA65R170M,TPB65R170M,TPC65R170M,TPP65R170M,TPV65R170M,TPW65R170M Wuxi Unigroup Microelectronics Co.,Ltd 650V Super-junction Power MOSFET DESCRIPTION 650V Super-junction Power MOSFET Super-junction power MOSFET is a revolutionary technology for high voltage power MOSFETs designed according to the SJ principle. The Multi-EPI SJ MOSFET provide an extremely low switching, communication

 7.3. Size:801K  cn wuxi unigroup
 tpb65r120m tpp65r120m tpr65r120m tpw65r120m.pdf pdf_icon

TPB65R160C

TPB65R120M,TPP65R120M,TPR65R120M,TPW65R120M Wuxi Unigroup Microelectronics Co.,Ltd 650V Super-junction Power MOSFET Description 650V Super-junction Power MOSFET Super-junction power MOSFET is a revolutionary technology for high voltage power MOSFETs designed according to the SJ principle. The Multi-EPI SJ MOSFET provide an extremely low switching, communication and conduction losses de

ПОКАЗАТЬ ЕЩЁ

Другие IGBT... TPB65R070D, TPP65R070D, TPW65R070D, TPA65R090M, TPA65R100MFD, TPV65R100MFD, TPW65R100MFD, TPA65R160C, 50N06, TPP65R160C, TPR65R160C, TPV65R160C, TPA65R170M, TPB65R170M, TPC65R170M, TPP65R170M, TPV65R170M