Справочник MOSFET. TPP65R160C

 

TPP65R160C Даташит. Основные параметры и характеристики. Поиск аналогов


   Наименование прибора: TPP65R160C
   Тип транзистора: MOSFET
   Полярность: N
   Pd ⓘ - Максимальная рассеиваемая мощность: 151 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 650 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 30 V
   |Id| ⓘ - Максимально допустимый постоянный ток стока: 20 A
   Tj ⓘ - Максимальная температура канала: 150 °C
   tr ⓘ - Время нарастания: 14 ns
   Cossⓘ - Выходная емкость: 116 pf
   Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.16 Ohm
   Тип корпуса: TO220
 

 Аналог (замена) для TPP65R160C

   - подбор ⓘ MOSFET транзистора по параметрам

 

TPP65R160C Datasheet (PDF)

 ..1. Size:554K  cn wuxi unigroup
tpp65r160c tpa65r160c tpv65r160c.pdfpdf_icon

TPP65R160C

TPP65R160C, TPA65R160C, TPV65R160C Wuxi Unigroup Microelectronics Company 650V Super-Junction Power MOSFET FEATURES Very low FOM RDS(on)Qg 100% avalanche tested RoHS compliant APPLICATIONS Switch Mode Power Supply (SMPS) Uninterruptible Power Supply (UPS) Power Factor Correction (PFC) Device Marking and Package Information Device Package Marki

 ..2. Size:808K  cn wuxi unigroup
tpa65r160c tpb65r160c tpp65r160c tpr65r160c tpv65r160c.pdfpdf_icon

TPP65R160C

TPA65R160C,TPB65R160C,TPP65R160C,TPR65R160C,TPV65R160CWuxi Unigroup Microelectronics Co.,Ltd650V Super-junction Power MOSFETDescription650V Super-junction Power MOSFETSuper-junction power MOSFET is a revolutionary technology for high voltage power MOSFETsdesigned according to the SJ principle. The deep trench SJ MOSFET provide an extremely low switching, communication and conduct

 7.1. Size:832K  cn wuxi unigroup
tpb65r135mfd tpp65r135mfd tpw65r135mfd.pdfpdf_icon

TPP65R160C

TPB65R135MFD,TPP65R135MFD,TPW65R135MFDWuxi Unigroup Microelectronics Co.,Ltd650V Super-junction Power MOSFETDescription650V Super-junction Power MOSFETSuper-junction power MOSFET is a revolutionary technology for high voltage power MOSFETsdesigned according to the SJ principle and pioneered. The Multi-EPI SJ MOSFET provide an extremely fast and robust body diode. Also provide an

 7.2. Size:947K  cn wuxi unigroup
tpa65r170m tpb65r170m tpc65r170m tpp65r170m tpv65r170m tpw65r170m.pdfpdf_icon

TPP65R160C

TPA65R170M,TPB65R170M,TPC65R170M,TPP65R170M,TPV65R170M,TPW65R170MWuxi Unigroup Microelectronics Co.,Ltd650V Super-junction Power MOSFETDESCRIPTION650V Super-junction Power MOSFETSuper-junction power MOSFET is a revolutionary technology for high voltage power MOSFETsdesigned according to the SJ principle. The Multi-EPI SJ MOSFET provide an extremely low switching, communication

Другие MOSFET... TPP65R070D , TPW65R070D , TPA65R090M , TPA65R100MFD , TPV65R100MFD , TPW65R100MFD , TPA65R160C , TPB65R160C , IRF640 , TPR65R160C , TPV65R160C , TPA65R170M , TPB65R170M , TPC65R170M , TPP65R170M , TPV65R170M , TPW65R170M .

History: CSFR3N60LP | AP10N4R5S

 

 
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