FDB3682 - описание и поиск аналогов

September 2002 FDB3682 / FDP3682 N-Channel PowerTrench MOSFET 100V, 32A, 36m Features Applications rDS(ON) = 32m (Typ.), VGS = 10V, ID = 32A DC/DC converters and Off-Line UPS Qg(tot) = 18.5nC (Typ.), VGS = 10V Distributed Power Architectures and VRMs Low Miller Charge Primary Switch for 24V and 48V Systems Low QRR Body Diode High Voltage Synchr

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

isc N-Channel MOSFET Transistor FDB3682 FEATURES With TO-263 packaging Drain Source Voltage- V 100V DSS Static drain-source on-resistance RDS(on) 36m @V =10V GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power supply Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 )

March 2012 FDB3632_F085 N-Channel PowerTrench MOSFET 100V, 80A, 9m Features Applications rDS(ON) = 7.5m (Typ.), VGS = 10V, ID = 80A DC/DC converters and Off-Line UPS Qg(tot) = 84nC (Typ.), VGS = 10V Distributed Power Architectures and VRMs Low Miller Charge Primary Switch for 24V and 48V Systems Low QRR Body Diode High Voltage Synchronous Recti

January 2009 FDB3672_F085 N-Channel PowerTrench MOSFET 100V, 44A, 28m Features Applications rDS(ON) = 24m (Typ.), VGS = 10V, ID = 44A DC/DC converters and Off-Line UPS Qg(tot) = 24nC (Typ.), VGS = 10V Distributed Power Architectures and VRMs Low Miller Charge Primary Switch for 24V and 48V Systems Low QRR Body Diode High Voltage Synchronous Rec

October 2013 FDP3652 / FDB3652 N-Channel PowerTrench MOSFET 100 V, 61 A, 16 m Applications Features rDS(on) = 14 m ( Typ.), VGS = 10 V, ID = 61 A Synchronous Rectification for ATX / Server / Telecom PSU Battery Protection Circuit Qg(tot) = 41 nC ( Typ.), VGS = 10 V Low Miller Charge Motor drives and Uninterruptible Power Supplies Low QRR Body Diode

October 2008 FDB3652_F085 N-Channel PowerTrench MOSFET 100V, 61A, 16m Features Applications rDS(ON) = 14m (Typ.), VGS = 10V, ID = 61A DC/DC Converters and Off-line UPS Qg(tot) = 41nC (Typ.), VGS = 10V Distributed Power Architectures and VRMs Low Miller Charge Primary Switch for 24V and 48V Systems Low QRR Body Diode High Voltage Synchronous Rectif

December 2008 FDB3632 / FDP3632 / FDI3632 / FDH3632 N-Channel PowerTrench MOSFET 100V, 80A, 9m Features Applications rDS(ON) = 7.5m (Typ.), VGS = 10V, ID = 80A DC/DC converters and Off-Line UPS Qg(tot) = 84nC (Typ.), VGS = 10V Distributed Power Architectures and VRMs Low Miller Charge Primary Switch for 24V and 48V Systems Low QRR Body Diode Hi

October 2003 FDB3652 / FDP3652 / FDI3652 N-Channel PowerTrench MOSFET 100V, 61A, 16m Features Applications rDS(ON) = 14m (Typ.), VGS = 10V, ID = 61A DC/DC Converters and Off-line UPS Qg(tot) = 41nC (Typ.), VGS = 10V Distributed Power Architectures and VRMs Low Miller Charge Primary Switch for 24V and 48V Systems Low QRR Body Diode High Voltage Syn

FDB3672-F085 N-Channel PowerTrench MOSFET 100V, 44A, 28m Applications Features rDS(ON) = 24m (Typ.), VGS = 10V, ID = 44A DC/DC converters and Off-Line UPS Qg(tot) = 24nC (Typ.), VGS = 10V Distributed Power Architectures and VRMs Low Miller Charge Primary Switch for 24V and 48V Systems Low QRR Body Diode High Voltage Synchronous Rectifier O

MOSFET Power, N-Channel, POWERTRENCH) 100 V, 80 A, 9 mW FDH3632, FDP3632, FDB3632 www.onsemi.com Features RDS(ON) = 7.5 mW (Typ.), VGS = 10 V, ID = 80 A Qg (tot) = 84 nC (Typ.), VGS = 10 V VDSS RDS(ON) MAX ID MAX Low Miller Charge 100 V 9 mW 80 A Low Qrr Body Diode UIS Capability (Single Pulse and Repetitive Pulse) D These Devices are Pb-Free and are R

FDB3652-F085 N-Channel PowerTrench MOSFET Applications 100V, 61A, 16m DC/DC Converters and Off-line UPS Features Distributed Power Architectures and VRMs rDS(ON) = 14m (Typ.), VGS = 10V, ID = 61A Primary Switch for 24V and 48V Systems Qg(tot) = 41nC (Typ.), VGS = 10V High Voltage Synchronous Rectifier Low Miller Charge Direct Injection / Dies

FDB3632-F085 N-Channel PowerTrench MOSFET Applications 100V, 80A, 9m DC/DC converters and Off-Line UPS Features Distributed Power Architectures and VRMs rDS(ON) = 7.5m (Typ.), VGS = 10V, ID = 80A Primary Switch for 24V and 48V Systems Qg(tot) = 84nC (Typ.), VGS = 10V High Voltage Synchronous Rectifier Low Miller Charge Low QRR Body Diode

isc N-Channel MOSFET Transistor FDB3632 FEATURES With TO-263 packaging Drain Source Voltage- V 100V DSS Static drain-source on-resistance RDS(on) 9m @V =10V GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power supply Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 )