TPA65R170M MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: TPA65R170M
Тип транзистора: MOSFET
Полярность: N
Максимальная рассеиваемая мощность (Pd): 34 W
Предельно допустимое напряжение сток-исток |Uds|: 650 V
Предельно допустимое напряжение затвор-исток |Ugs|: 30 V
Максимально допустимый постоянный ток стока |Id|: 20 A
Максимальная температура канала (Tj): 150 °C
Время нарастания (tr): 59 ns
Выходная емкость (Cd): 59 pf
Сопротивление сток-исток открытого транзистора (Rds): 0.17 Ohm
Тип корпуса: TO220F
Аналог (замена) для TPA65R170M
TPA65R170M Datasheet (PDF)
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