Справочник MOSFET. TPA65R1K5M

 

TPA65R1K5M Даташит. Основные параметры и характеристики. Поиск аналогов


   Наименование прибора: TPA65R1K5M
   Маркировка: 65R1K5M
   Тип транзистора: MOSFET
   Полярность: N
   Pd ⓘ - Максимальная рассеиваемая мощность: 25 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 650 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Vgs(th)|ⓘ - Пороговое напряжение включения: 4 V
   |Id| ⓘ - Максимально допустимый постоянный ток стока: 3 A
   Tj ⓘ - Максимальная температура канала: 150 °C
   Qg ⓘ - Общий заряд затвора: 7 nC
   tr ⓘ - Время нарастания: 7.7 ns
   Cossⓘ - Выходная емкость: 10 pf
   Rds ⓘ - Сопротивление сток-исток открытого транзистора: 1.5 Ohm
   Тип корпуса: TO220F
 

 Аналог (замена) для TPA65R1K5M

   - подбор ⓘ MOSFET транзистора по параметрам

 

TPA65R1K5M Datasheet (PDF)

 ..1. Size:698K  cn wuxi unigroup
 tpa65r1k5m tpd65r1k5m tpu65r1k5m tpy65r1k5mb.pdf pdf_icon

TPA65R1K5M

TPA65R1K5M,TPD65R1K5M,TPU65R1K5M,TPY65R1K5MB Wuxi Unigroup Microelectronics Co.,Ltd 650V Super-junction Power MOSFET Description 650V Super-junction Power MOSFET Super-junction power MOSFET is a revolutionary technology for high voltage power MOSFETsdesigned according to the SJ principle. The Multi-EPI SJ MOSFET provide an extremely low switching, communication and conduction los

 7.1. Size:554K  cn wuxi unigroup
 tpp65r160c tpa65r160c tpv65r160c.pdf pdf_icon

TPA65R1K5M

TPP65R160C, TPA65R160C, TPV65R160C Wuxi Unigroup Microelectronics Company 650V Super-Junction Power MOSFET FEATURES Very low FOM RDS(on)Qg 100% avalanche tested RoHS compliant APPLICATIONS Switch Mode Power Supply (SMPS) Uninterruptible Power Supply (UPS) Power Factor Correction (PFC) Device Marking and Package Information Device Package Marki

 7.2. Size:947K  cn wuxi unigroup
 tpa65r170m tpb65r170m tpc65r170m tpp65r170m tpv65r170m tpw65r170m.pdf pdf_icon

TPA65R1K5M

TPA65R170M,TPB65R170M,TPC65R170M,TPP65R170M,TPV65R170M,TPW65R170MWuxi Unigroup Microelectronics Co.,Ltd650V Super-junction Power MOSFETDESCRIPTION650V Super-junction Power MOSFETSuper-junction power MOSFET is a revolutionary technology for high voltage power MOSFETsdesigned according to the SJ principle. The Multi-EPI SJ MOSFET provide an extremely low switching, communication

 7.3. Size:481K  cn wuxi unigroup
 tpa65r190mfd.pdf pdf_icon

TPA65R1K5M

TPA65R190MFD Wuxi Unigroup Microelectronics Co.,Ltd 650V Super-Junction Power MOSFET DESCRIPTION 650V super-junction Power MOSFET Super-junction power MOSFET is a revolutionary technology for high voltage power MOSFETsdesigned according to the SJ principle. The SJ MOSFET is a price-performance optimized product enabling to target cost sensitive applications in Consumer and Ligh

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Другие MOSFET... TPA65R170M , TPB65R170M , TPC65R170M , TPP65R170M , TPV65R170M , TPW65R170M , TPA65R180D , TPA65R190MFD , IRFB4227 , TPD65R1K5M , TPU65R1K5M , TPY65R1K5MB , TPA65R260M , TPB65R260M , TPC65R260M , TPP65R260M , TPV65R260M .

History: HY6N60D | AP2344GN-HF | AONS1R6A70 | IRFP26N60L | SQ4410EY | SQJB42EP

 

 
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