Справочник MOSFET. TPD65R1K5M

 

TPD65R1K5M Даташит. Основные параметры и характеристики. Поиск аналогов


   Наименование прибора: TPD65R1K5M
   Тип транзистора: MOSFET
   Полярность: N
   Pd ⓘ - Максимальная рассеиваемая мощность: 28 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 650 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Id| ⓘ - Максимально допустимый постоянный ток стока: 3 A
   Tj ⓘ - Максимальная температура канала: 150 °C
   tr ⓘ - Время нарастания: 7.7 ns
   Cossⓘ - Выходная емкость: 10 pf
   Rds ⓘ - Сопротивление сток-исток открытого транзистора: 1.5 Ohm
   Тип корпуса: TO252
 

 Аналог (замена) для TPD65R1K5M

   - подбор ⓘ MOSFET транзистора по параметрам

 

TPD65R1K5M Datasheet (PDF)

 ..1. Size:698K  cn wuxi unigroup
tpa65r1k5m tpd65r1k5m tpu65r1k5m tpy65r1k5mb.pdfpdf_icon

TPD65R1K5M

TPA65R1K5M,TPD65R1K5M,TPU65R1K5M,TPY65R1K5MB Wuxi Unigroup Microelectronics Co.,Ltd 650V Super-junction Power MOSFET Description 650V Super-junction Power MOSFET Super-junction power MOSFET is a revolutionary technology for high voltage power MOSFETsdesigned according to the SJ principle. The Multi-EPI SJ MOSFET provide an extremely low switching, communication and conduction los

 8.1. Size:473K  cn wuxi unigroup
tpd65r520d.pdfpdf_icon

TPD65R1K5M

TPD65R520D Wuxi Unigroup Microelectronics Company 650V Super-Junction Power MOSFET DESCRIPTION 650V super-junction Power MOSFET Super-junction power MOSFET is a revolutionary technology for high voltage power MOSFETsdesigned according to the SJ principle. The SJ MOSFET is a price-performance optimized product enabling to target cost sensitive applications in Consumer and Ligh

 8.2. Size:1239K  cn wuxi unigroup
tpa65r360m tpb65r360m tpc65r360m tpd65r360m tpp65r360m tpr65r360m tpu65r360m.pdfpdf_icon

TPD65R1K5M

TPA65R360M,TPB65R360M,TPC65R360M,TPD65R360M,TPP65R360M,TPR65R360M,TPU65R360MWuxi Unigroup Microelectronics Co.,Ltd650V Super-junction Power MOSFETDescription650V Super-junction Power MOSFETSuper-junction power MOSFET is a revolutionary technology for high voltage power MOSFETsdesigned according to the SJ principle. The Multi-EPI SJ MOSFET provide an extremely low switching, com

 8.3. Size:748K  cn wuxi unigroup
tpa65r950m tpd65r950m.pdfpdf_icon

TPD65R1K5M

TPA65R950M,TPD65R950MWuxi Unigroup Microelectronics Co.,Ltd650V Super-junction Power MOSFETDescription650V Super-junction Power MOSFETSuper-junction power MOSFET is a revolutionary technology for high voltage power MOSFETsdesigned according to the SJ principle. The Multi-EPI SJ MOSFET provide an extremely low switching, communication and conduction losses device with highest ro

Другие MOSFET... TPB65R170M , TPC65R170M , TPP65R170M , TPV65R170M , TPW65R170M , TPA65R180D , TPA65R190MFD , TPA65R1K5M , IRFB4110 , TPU65R1K5M , TPY65R1K5MB , TPA65R260M , TPB65R260M , TPC65R260M , TPP65R260M , TPV65R260M , TPW65R260M .

History: 6N60KG-TN3-R | 2N5116UB | SM3419NHQA | RS1G180MN | PMV15UNEA | CPH6311 | KQB2N50

 

 
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