Справочник MOSFET. TPP65R750C

 

TPP65R750C Даташит. Основные параметры и характеристики. Поиск аналогов


   Наименование прибора: TPP65R750C
   Тип транзистора: MOSFET
   Полярность: N
   Pd ⓘ - Максимальная рассеиваемая мощность: 37 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 650 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 30 V
   |Id| ⓘ - Максимально допустимый постоянный ток стока: 6 A
   Tj ⓘ - Максимальная температура канала: 150 °C
   tr ⓘ - Время нарастания: 26 ns
   Cossⓘ - Выходная емкость: 24 pf
   Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.8 Ohm
   Тип корпуса: TO220
 

 Аналог (замена) для TPP65R750C

   - подбор ⓘ MOSFET транзистора по параметрам

 

TPP65R750C Datasheet (PDF)

 ..1. Size:758K  cn wuxi unigroup
 tpa65r750c tpb65r750c tpc65r750c tpd65r750c tpp65r750c tpu65r750c.pdf pdf_icon

TPP65R750C

TPA65R750C, TPB65R750C, TPC65R750C, TPD65R750C, TPP65R750C, TPU65R750C Wuxi Unigroup Microelectronics Company 650V Super-Junction Power MOSFET FEATURES Very low FOM RDS(on)Qg 100% avalanche tested RoHS compliant APPLICATIONS Switch Mode Power Supply (SMPS) Uninterruptible Power Supply (UPS) Power Factor Correction (PFC) Device Marking and Package

 8.1. Size:554K  cn wuxi unigroup
 tpp65r160c tpa65r160c tpv65r160c.pdf pdf_icon

TPP65R750C

TPP65R160C, TPA65R160C, TPV65R160C Wuxi Unigroup Microelectronics Company 650V Super-Junction Power MOSFET FEATURES Very low FOM RDS(on)Qg 100% avalanche tested RoHS compliant APPLICATIONS Switch Mode Power Supply (SMPS) Uninterruptible Power Supply (UPS) Power Factor Correction (PFC) Device Marking and Package Information Device Package Marki

 8.2. Size:832K  cn wuxi unigroup
 tpb65r135mfd tpp65r135mfd tpw65r135mfd.pdf pdf_icon

TPP65R750C

TPB65R135MFD,TPP65R135MFD,TPW65R135MFDWuxi Unigroup Microelectronics Co.,Ltd650V Super-junction Power MOSFETDescription650V Super-junction Power MOSFETSuper-junction power MOSFET is a revolutionary technology for high voltage power MOSFETsdesigned according to the SJ principle and pioneered. The Multi-EPI SJ MOSFET provide an extremely fast and robust body diode. Also provide an

 8.3. Size:1239K  cn wuxi unigroup
 tpa65r360m tpb65r360m tpc65r360m tpd65r360m tpp65r360m tpr65r360m tpu65r360m.pdf pdf_icon

TPP65R750C

TPA65R360M,TPB65R360M,TPC65R360M,TPD65R360M,TPP65R360M,TPR65R360M,TPU65R360MWuxi Unigroup Microelectronics Co.,Ltd650V Super-junction Power MOSFETDescription650V Super-junction Power MOSFETSuper-junction power MOSFET is a revolutionary technology for high voltage power MOSFETsdesigned according to the SJ principle. The Multi-EPI SJ MOSFET provide an extremely low switching, com

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Другие MOSFET... TPA65R600M , TPB65R600M , TPD65R600M , TPU65R600M , TPA65R750C , TPB65R750C , TPC65R750C , TPD65R750C , IRF1407 , TPU65R750C , TPA65R950M , TPB65R950M , TPD65R950M , TPA70R190C , TPC70R190C , TPP70R190C , TPV70R190C .

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