STU417L MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: STU417L
Тип транзистора: MOSFET
Полярность: P
Максимальная рассеиваемая мощность (Pd): 42 W
Предельно допустимое напряжение сток-исток |Uds|: 40 V
Предельно допустимое напряжение затвор-исток |Ugs|: 20 V
Пороговое напряжение включения |Ugs(th)|: 3 V
Максимально допустимый постоянный ток стока |Id|: 34 A
Общий заряд затвора (Qg): 16 nC
Выходная емкость (Cd): 280 pf
Сопротивление сток-исток открытого транзистора (Rds): 0.016 Ohm
Тип корпуса: TO252 DPAK
STU417L Datasheet (PDF)
stu417l std417l.pdf
GrPPrPPSTU/D417LaS mHop Microelectronics C orp.Ver 1.1P-Channel Logic Level Enhancement Mode Field Effect TransistorFEATURESPRODUCT SUMMARYSuper high dense cell design for low RDS(ON).VDSS ID RDS(ON) (m) MaxRugged and reliable.16 @ VGS=-10VSuface Mount Package.-40V -34A26 @ VGS=-4.5VGGSSSTU SERIESSTD SERIES( )TO - 252AA D- PAK ( )TO - 251
stu417s std417s.pdf
GreenProductSTU/D417SaS mHop Microelectronics C orp.Ver 1.2P-Channel Logic Level Enhancement Mode Field Effect TransistorFEATURESPRODUCT SUMMARYSuper high dense cell design for low RDS(ON).VDSS ID RDS(ON) (m) TypRugged and reliable.14 @ VGS=-10VSuface Mount Package.-40V -43A23 @ VGS=-4.5VGGSSSTU SERIESSTD SERIES( )TO - 252AA D- PAK ( )TO - 251 I
stu417s.pdf
STU417Swww.VBsemi.twP-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)d Qg (Typ.)Definition0.018 at VGS = - 10 V - 40 TrenchFET Power MOSFET- 30 13 nC 100 % Rg Tested0.025 at VGS = - 4.5 V - 35APPLICATIONS Load Switch Battery SwitchSTO-252 GDG D S P-Channel MOSFETABS
stu410s std410s.pdf
S TU/D410SS amHop Microelectronics C orp.ver1.1Oct. 9, 2007N-Channel Logic Level E nhancement Mode Field E ffect TransistorFEATUR ESPR ODUCT S UMMAR YS uper high dense cell design for low R DS (ON).VDS S ID R DS (ON) ( m ) MaxR ugged and reliable.20 @ VGS = 10VSurface Mount Package.30A40VESD Protected.30 @ VGS =4.5VDDDGGGSSSTU SERIES STD SERIE
stu412s std412s.pdf
STU/D412SaS mHop Microelectronics C orp.Ver 1.0N-Channel Logic Level Enhancement Mode Field Effect TransistorFEATURESPRODUCT SUMMARYSuper high dense cell design for low RDS(ON).RDS(ON) (m) MaxVDSS IDRugged and reliable.26 @ VGS=10V40V 22A TO-252 and TO-251 Package.40 @ VGS=4.5VESD Protected.DDGGSSTU SERIES STD SERIESTO-252AA(D-PAK) TO-251(l-PAK)S(
stu411d.pdf
GreenProductSTU411DaS mHop Microelectronics C orp.Ver 1.1Dual Enhancement Mode Field Effect Transistor (N and P Channel)PRODUCT SUMMARY (N-Channel) PRODUCT SUMMARY (P-Channel)RDS(ON) (m) Max RDS(ON) (m) MaxVDSS ID VDSS ID32 @ VGS=10V 48 @ VGS=-10V40V 15A-40V -12A42 @ VGS=4.5V 68 @ VGS=-4.5VD1 D2D1/D2G 1G 2S 1G1S 2G2 S 1 N-ch S 2 P-chTO-252-4L(
stu419s std419s.pdf
GreenProductSTU/D419SaS mHop Microelectronics C orp.Ver 1.0P-Channel Logic Level Enhancement Mode Field Effect TransistorFEATURESPRODUCT SUMMARYSuper high dense cell design for low RDS(ON).VDSS ID RDS(ON) (m) MaxRugged and reliable.11.5 @ VGS=10VSuface Mount Package.-40V -58A16 @ VGS=4.5VESD Protected.GGSSSTU SERIESSTD SERIES( )TO - 252AA D- PAK
stu419a std419a.pdf
GreenProductSTU/D419AaS mHop Microelectronics C orp.Ver 1.0P-Channel Logic Level Enhancement Mode Field Effect TransistorFEATURESPRODUCT SUMMARYSuper high dense cell design for low RDS(ON).VDSS ID RDS(ON) (m) MaxRugged and reliable.11 @ VGS=-10VSuface Mount Package.-40V -60A16 @ VGS=-4.5VESD Protected.GGSSSTU SERIESSTD SERIES( )TO - 252AA D- PAK
stu413s std413s.pdf
GrerrPPrPrProSTU/D413SaS mHop Microelectronics C orp.Ver 1.1P-Channel Logic Level Enhancement Mode Field Effect TransistorFEATURESPRODUCT SUMMARYSuper high dense cell design for low RDS(ON).VDSS ID RDS(ON) (m) MaxRugged and reliable.48 @ VGS=10VSuface Mount Package.-40V -22A78 @ VGS=4.5VESD Protected.GGSSSTU SERIESSTD SERIES( )TO - 252
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