TPA80R250A Даташит. Основные параметры и характеристики. Поиск аналогов
Наименование прибора: TPA80R250A
Тип транзистора: MOSFET
Полярность: N
Pdⓘ - Максимальная рассеиваемая мощность: 34 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 800 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 30 V
|Id|ⓘ - Максимально допустимый постоянный ток стока: 18 A
Tjⓘ - Максимальная температура канала: 150 °C
trⓘ - Время нарастания: 42.6 ns
Cossⓘ - Выходная емкость: 217 pf
Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.28 Ohm
Тип корпуса: TO220F
- подбор MOSFET транзистора по параметрам
TPA80R250A Datasheet (PDF)
tpa80r250a tpp80r250a tpw80r250a.pdf

TPA80R250A, TPP80R250A, TPW80R250A Wuxi Unigroup Microelectronics Company 800V Super-Junction Power MOSFET FEATURES Very low FOM RDS(on)Qg 100% avalanche tested RoHS compliant APPLICATIONS Switch Mode Power Supply (SMPS) D Uninterruptible Power Supply (UPS) Power Factor Correction (PFC) G Device Marking and Package Information Device Packa
tpp80r300c tpa80r300c tpv80r300c tpc80r300c tpb80r300c.pdf

TPP80R300C, TPA80R300C, TPV80R300C, TPC80R300C, TPB80R300C Wuxi Unigroup Microelectronics Company 800V Super-Junction Power MOSFET FEATURES Very low FOM RDS(on)Qg 100% avalanche tested RoHS compliant APPLICATIONS Switch Mode Power Supply (SMPS) Uninterruptible Power Supply (UPS) Power Factor Correction (PFC) Device Marking and Package Informatio
tpa80r750c tpb80r750c tpc80r750c tpd80r750c tpp80r750c tpu80r750c.pdf

TPA80R750C, TPB80R750C, TPC80R750C, TPD80R750C, TPP80R750C, TPU80R750C Wuxi Unigroup Microelectronics Company 800V Super-Junction Power MOSFET FEATURES Very low FOM RDS(on)Qg 100% avalanche tested RoHS compliant APPLICATIONS Switch Mode Power Supply (SMPS) Uninterruptible Power Supply (UPS) Power Factor Correction (PFC) Device Marking and Package
tpa80r300c tpb80r300c tpp80r300c tpw80r300c.pdf

TPA80R300C,TPB80R300C,TPP80R300C,TPW80R300CWuxi Unigroup Microelectronics Co.,Ltd800V Super-junction Power MOSFETDescription800V Super-junction Power MOSFETSuper-junction power MOSFET is a revolutionary technology for high voltage power MOSFETsdesigned according to the SJ principle. The deep trench SJ MOSFET provide an extremely low switching, communication and conduction losse
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History: SI9435DY-T1 | SKI04024
History: SI9435DY-T1 | SKI04024



Список транзисторов
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