TPW80R250A Даташит. Основные параметры и характеристики. Поиск аналогов
Наименование прибора: TPW80R250A
Тип транзистора: MOSFET
Полярность: N
Pd ⓘ - Максимальная рассеиваемая мощность: 240 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 800 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 30 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 18 A
Tj ⓘ - Максимальная температура канала: 150 °C
tr ⓘ - Время нарастания: 42.6 ns
Cossⓘ - Выходная емкость: 217 pf
Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.28 Ohm
Тип корпуса: TO247
Аналог (замена) для TPW80R250A
TPW80R250A Datasheet (PDF)
tpa80r250a tpp80r250a tpw80r250a.pdf

TPA80R250A, TPP80R250A, TPW80R250A Wuxi Unigroup Microelectronics Company 800V Super-Junction Power MOSFET FEATURES Very low FOM RDS(on)Qg 100% avalanche tested RoHS compliant APPLICATIONS Switch Mode Power Supply (SMPS) D Uninterruptible Power Supply (UPS) Power Factor Correction (PFC) G Device Marking and Package Information Device Packa
tpw80r200mfd.pdf

TPW80R200MFDWuxi Unigroup Microelectronics Co.,Ltd800V Super-junction Power MOSFETDescription800V Super-junction Power MOSFETSuper-junction power MOSFET is a revolutionary technology for high voltage power MOSFETsdesigned according to the SJ principle and pioneered. The Multi-EPI SJ MOSFET provide an extremely fast and robust body diode. Also provide an extremely low switching,
tpw80r300mfd.pdf

TPW80R300MFDWuxi Unigroup Microelectronics Co.,Ltd800V Super-junction Power MOSFETDescription800V Super-junction Power MOSFETSuper-junction power MOSFET is a revolutionary technology for high voltage power MOSFETsdesigned according to the SJ principle and pioneered. The Multi-EPI SJ MOSFET provide an extremely fast and robust body diode. Also provide an extremely low switching,
tpa80r300c tpb80r300c tpp80r300c tpw80r300c.pdf

TPA80R300C,TPB80R300C,TPP80R300C,TPW80R300CWuxi Unigroup Microelectronics Co.,Ltd800V Super-junction Power MOSFETDescription800V Super-junction Power MOSFETSuper-junction power MOSFET is a revolutionary technology for high voltage power MOSFETsdesigned according to the SJ principle. The deep trench SJ MOSFET provide an extremely low switching, communication and conduction losse
Другие MOSFET... TPU70R600M , TPA73R190M , TPA73R300M , TPA73R400M , TPA80R180M , TPB80R180M , TPA80R250A , TPP80R250A , AON7403 , TPA80R300C , TPB80R300C , TPP80R300C , TPW80R300C , TPA80R750C , TPB80R750C , TPC80R750C , TPD80R750C .
History: IPA50R299CP | OSG60R022HT3ZF | 2SK2793 | BF1208D | CJAC10TH10 | TPM8205ATS6 | IRFI840GLCPBF
History: IPA50R299CP | OSG60R022HT3ZF | 2SK2793 | BF1208D | CJAC10TH10 | TPM8205ATS6 | IRFI840GLCPBF



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