TPW65R075DFD MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: TPW65R075DFD
Маркировка: 65R075DFD
Тип транзистора: MOSFET
Полярность: N
Pdⓘ - Максимальная рассеиваемая мощность: 312 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 650 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 30 V
|Vgs(th)|ⓘ - Пороговое напряжение включения: 4.5 V
|Id|ⓘ - Максимально допустимый постоянный ток стока: 45 A
Tjⓘ - Максимальная температура канала: 150 °C
Qgⓘ - Общий заряд затвора: 81 nC
trⓘ - Время нарастания: 80 ns
Cossⓘ - Выходная емкость: 123 pf
Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.075 Ohm
Тип корпуса: TO247
Аналог (замена) для TPW65R075DFD
TPW65R075DFD Datasheet (PDF)
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Список транзисторов
Обновления
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