TPR65R120M. Аналоги и основные параметры

Наименование производителя: TPR65R120M

Тип транзистора: MOSFET

Полярность: N

Предельные значения

Pd ⓘ - Максимальная рассеиваемая мощность: 34 W

|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 650 V

|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 30 V

|Id| ⓘ - Максимально допустимый постоянный ток стока: 30 A

Tj ⓘ - Максимальная температура канала: 150 °C

Электрические характеристики

tr ⓘ - Время нарастания: 40 ns

Cossⓘ - Выходная емкость: 90 pf

RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.12 Ohm

Тип корпуса: TO220FP-NL

Аналог (замена) для TPR65R120M

- подборⓘ MOSFET транзистора по параметрам

 

TPR65R120M даташит

 ..1. Size:801K  cn wuxi unigroup
 tpb65r120m tpp65r120m tpr65r120m tpw65r120m.pdf pdf_icon

TPR65R120M

TPB65R120M,TPP65R120M,TPR65R120M,TPW65R120M Wuxi Unigroup Microelectronics Co.,Ltd 650V Super-junction Power MOSFET Description 650V Super-junction Power MOSFET Super-junction power MOSFET is a revolutionary technology for high voltage power MOSFETs designed according to the SJ principle. The Multi-EPI SJ MOSFET provide an extremely low switching, communication and conduction losses de

 7.1. Size:808K  cn wuxi unigroup
 tpa65r160c tpb65r160c tpp65r160c tpr65r160c tpv65r160c.pdf pdf_icon

TPR65R120M

TPA65R160C,TPB65R160C,TPP65R160C,TPR65R160C,TPV65R160C Wuxi Unigroup Microelectronics Co.,Ltd 650V Super-junction Power MOSFET Description 650V Super-junction Power MOSFET Super-junction power MOSFET is a revolutionary technology for high voltage power MOSFETs designed according to the SJ principle. The deep trench SJ MOSFET provide an extremely low switching, communication and conduct

 8.1. Size:1239K  cn wuxi unigroup
 tpa65r360m tpb65r360m tpc65r360m tpd65r360m tpp65r360m tpr65r360m tpu65r360m.pdf pdf_icon

TPR65R120M

TPA65R360M,TPB65R360M,TPC65R360M, TPD65R360M,TPP65R360M,TPR65R360M,TPU65R360M Wuxi Unigroup Microelectronics Co.,Ltd 650V Super-junction Power MOSFET Description 650V Super-junction Power MOSFET Super-junction power MOSFET is a revolutionary technology for high voltage power MOSFETs designed according to the SJ principle. The Multi-EPI SJ MOSFET provide an extremely low switching, com

 8.2. Size:876K  cn wuxi unigroup
 tpa65r360m tpb65r360m tpd65r360m tpp65r360m tpr65r360m tpu65r360m.pdf pdf_icon

TPR65R120M

TPA65R360M,TPB65R360M,TPD65R360M,TPP65R360M,TPR65R360M,TPU65R360M Wuxi Unigroup Microelectronics Co.,Ltd 650V Super-junction Power MOSFET DESCRIPTION 650V Super-junction Power MOSFET Super-junction power MOSFET is a revolutionary technology for high voltage power MOSFETs designed according to the SJ principle. The Multi-EPI SJ MOSFET provide an extremely low switching, communication

ПОКАЗАТЬ ЕЩЁ

Другие IGBT... TPD80R750C, TPP80R750C, TPU80R750C, TPB65R075DFD, TPP65R075DFD, TPW65R075DFD, TPB65R120M, TPP65R120M, IRF840, TPW65R120M, TPB65R135MFD, TPP65R135MFD, TPW65R135MFD, TPB70R950M, TPD70R950M, TPD50R3K8D, TPD60R1K4M