TPD60R330M Даташит. Основные параметры и характеристики. Поиск аналогов
Наименование прибора: TPD60R330M
Тип транзистора: MOSFET
Полярность: N
Pd ⓘ - Максимальная рассеиваемая мощность: 83 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 600 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 30 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 11 A
Tj ⓘ - Максимальная температура канала: 150 °C
tr ⓘ - Время нарастания: 61 ns
Cossⓘ - Выходная емкость: 31 pf
Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.33 Ohm
Тип корпуса: TO252
Аналог (замена) для TPD60R330M
TPD60R330M Datasheet (PDF)
tpd60r330m.pdf

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TPA60R360MFD,TPD60R360MFDWuxi Unigroup Microelectronics Co.,Ltd600V Super-junction Power MOSFETDescription600V Super-junction Power MOSFETSuper-junction power MOSFET is a revolutionary technology for high voltage power MOSFETsdesigned according to the SJ principle and pioneered. The Multi-EPI SJ MOSFET provide an extremely fast and robust body diode. Also provide an extremely l
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History: P0460EDA | FQD19N10TM | MEM2310M3 | FQB34N20TMAM002 | 2SK2821 | AP70SL380AS | 2SK1838S
History: P0460EDA | FQD19N10TM | MEM2310M3 | FQB34N20TMAM002 | 2SK2821 | AP70SL380AS | 2SK1838S



Список транзисторов
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