TPD60R840C Даташит. Основные параметры и характеристики. Поиск аналогов
Наименование прибора: TPD60R840C
Тип транзистора: MOSFET
Полярность: N
Pd ⓘ - Максимальная рассеиваемая мощность: 28 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 600 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 30 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 4 A
Tj ⓘ - Максимальная температура канала: 150 °C
tr ⓘ - Время нарастания: 27 ns
Cossⓘ - Выходная емкость: 20 pf
Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.9 Ohm
Тип корпуса: TO252
Аналог (замена) для TPD60R840C
TPD60R840C Datasheet (PDF)
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TPP60R840C, TPA60R840C, TPU60R840C, TPD60R840C, TPC60R840C, TPB60R840C Wuxi Unigroup Microelectronics Company 600V Super-Junction Power MOSFET FEATURES Very low FOM RDS(on)Qg 100% avalanche tested RoHS compliant APPLICATIONS Switch Mode Power Supply (SMPS) Uninterruptible Power Supply (UPS) Power Factor Correction (PFC) Device Marking and Package
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TPA60R600MFD,TPD60R600MFDWuxi Unigroup Microelectronics Co.,Ltd600V Super-junction Power MOSFETDESCRIPTION600V Super-junction Power MOSFETSuper-junction power MOSFET is a revolutionary technology for high voltage power MOSFETsdesigned according to the SJ principle and pioneered. The Multi-EPI SJ MOSFET provide an extremely fast and robust body diode. Also provide an extremely l
Другие MOSFET... TPA60R580C , TPU60R580C , TPD60R580C , TPC60R580C , TPB60R580C , TPP60R840C , TPA60R840C , TPU60R840C , 20N50 , TPC60R840C , TPB60R840C , TPP65R380C , TPA65R380C , TPU65R380C , TPD65R380C , TPC65R380C , TPB65R380C .
History: BSZ009NE2LS5 | STF28NM50N | TPW65R100MFD | 15N10 | MMFT2N02ELT1 | HGK020N10S | SVF18NE50PN
History: BSZ009NE2LS5 | STF28NM50N | TPW65R100MFD | 15N10 | MMFT2N02ELT1 | HGK020N10S | SVF18NE50PN



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