Справочник MOSFET. TPA65R380C

 

TPA65R380C Даташит. Основные параметры и характеристики. Поиск аналогов


   Наименование прибора: TPA65R380C
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 31.3 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 650 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 30 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 11 A
   Tjⓘ - Максимальная температура канала: 150 °C
   trⓘ - Время нарастания: 20 ns
   Cossⓘ - Выходная емкость: 50 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.38 Ohm
   Тип корпуса: TO220F
     - подбор MOSFET транзистора по параметрам

 

TPA65R380C Datasheet (PDF)

 ..1. Size:750K  cn wuxi unigroup
tpp65r380c tpa65r380c tpu65r380c tpd65r380c tpc65r380c tpb65r380c.pdfpdf_icon

TPA65R380C

TPP65R380C, TPA65R380C, TPU65R380C, TPD65R380C, TPC65R380C, TPB65R380C Wuxi Unigroup Microelectronics Company 650V Super-Junction Power MOSFET FEATURES Very low FOM RDS(on)Qg 100% avalanche tested RoHS compliant APPLICATIONS Switch Mode Power Supply (SMPS) Uninterruptible Power Supply (UPS) Power Factor Correction (PFC) Device Marking and Package

 5.1. Size:705K  cn wuxi unigroup
tpa65r380d tpd65r380d.pdfpdf_icon

TPA65R380C

TPA65R380D,TPD65R380DWuxi Unigroup Microelectronics Co.,Ltd650V Super-junction Power MOSFETDescription650V Super-junction Power MOSFETSuper-junction power MOSFET is a revolutionary technology for high voltage power MOSFETsdesigned according to the SJ principle. The deep trench SJ MOSFET provide an extremely low switching, communication and conduction losses device with highest

 7.1. Size:1239K  cn wuxi unigroup
tpa65r360m tpb65r360m tpc65r360m tpd65r360m tpp65r360m tpr65r360m tpu65r360m.pdfpdf_icon

TPA65R380C

TPA65R360M,TPB65R360M,TPC65R360M,TPD65R360M,TPP65R360M,TPR65R360M,TPU65R360MWuxi Unigroup Microelectronics Co.,Ltd650V Super-junction Power MOSFETDescription650V Super-junction Power MOSFETSuper-junction power MOSFET is a revolutionary technology for high voltage power MOSFETsdesigned according to the SJ principle. The Multi-EPI SJ MOSFET provide an extremely low switching, com

 7.2. Size:487K  cn wuxi unigroup
tpa65r300mfd.pdfpdf_icon

TPA65R380C

TPA65R300MFDWuxi Unigroup Microelectronics Co.,Ltd650V Super-Junction Power MOSFETDESCRIPTION650V Super-junction Power MOSFETSuper-junction power MOSFET is a revolutionary technology for high voltage power MOSFETsdesigned according to the SJ principle and pioneered. The Multi-EPI SJ MOSFET provide an extremely fast and robust body diode. Also provide an extremely low switching,

Другие MOSFET... IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , 2SK3568 , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .

History: AM9569D | IRC8405 | SSM40N03P | 7N65KG-T2Q-T | 2SK56 | SQJ460AEP | IRF6217

 

 
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