TPB65R600C. Аналоги и основные параметры

Наименование производителя: TPB65R600C

Тип транзистора: MOSFET

Полярность: N

Предельные значения

Pd ⓘ - Максимальная рассеиваемая мощность: 63 W

|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 650 V

|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 30 V

|Id| ⓘ - Максимально допустимый постоянный ток стока: 7 A

Tj ⓘ - Максимальная температура канала: 150 °C

Электрические характеристики

tr ⓘ - Время нарастания: 25 ns

Cossⓘ - Выходная емкость: 31 pf

RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.62 Ohm

Тип корпуса: TO263

Аналог (замена) для TPB65R600C

- подборⓘ MOSFET транзистора по параметрам

 

TPB65R600C даташит

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