TPD70R950C - Даташиты. Аналоги. Основные параметры
Наименование производителя: TPD70R950C
Тип транзистора: MOSFET
Полярность: N
Pd ⓘ - Максимальная рассеиваемая мощность: 37 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 700 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 30 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 6 A
Tj ⓘ - Максимальная температура канала: 150 °C
tr ⓘ - Время нарастания: 26 ns
Cossⓘ - Выходная емкость: 24 pf
Rds ⓘ - Сопротивление сток-исток открытого транзистора: 1 Ohm
Тип корпуса: TO252
Аналог (замена) для TPD70R950C
TPD70R950C Datasheet (PDF)
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Список транзисторов
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