TPP80R270M MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: TPP80R270M
Маркировка: 80R270M
Тип транзистора: MOSFET
Полярность: N
Pdⓘ - Максимальная рассеиваемая мощность: 151 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 800 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 30 V
|Vgs(th)|ⓘ - Пороговое напряжение включения: 4.5 V
|Id|ⓘ - Максимально допустимый постоянный ток стока: 17 A
Tjⓘ - Максимальная температура канала: 150 °C
Qgⓘ - Общий заряд затвора: 38.5 nC
trⓘ - Время нарастания: 59 ns
Cossⓘ - Выходная емкость: 41.25 pf
Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.27 Ohm
Тип корпуса: TO220
Аналог (замена) для TPP80R270M
TPP80R270M Datasheet (PDF)
tpp80r270m.pdf
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Список транзисторов
Обновления
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