TPC80R300C MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: TPC80R300C
Тип транзистора: MOSFET
Полярность: N
Максимальная рассеиваемая мощность (Pd): 151 W
Предельно допустимое напряжение сток-исток |Uds|: 800 V
Предельно допустимое напряжение затвор-исток |Ugs|: 30 V
Максимально допустимый постоянный ток стока |Id|: 15 A
Максимальная температура канала (Tj): 150 °C
Время нарастания (tr): 14 ns
Выходная емкость (Cd): 116 pf
Сопротивление сток-исток открытого транзистора (Rds): 0.3 Ohm
Тип корпуса: TO262
Аналог (замена) для TPC80R300C
TPC80R300C Datasheet (PDF)
tpp80r300c tpa80r300c tpv80r300c tpc80r300c tpb80r300c.pdf
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TPP80R300C, TPA80R300C, TPV80R300C, TPC80R300C, TPB80R300C Wuxi Unigroup Microelectronics Company 800V Super-Junction Power MOSFET FEATURES Very low FOM RDS(on)Qg 100% avalanche tested RoHS compliant APPLICATIONS Switch Mode Power Supply (SMPS) Uninterruptible Power Supply (UPS) Power Factor Correction (PFC) Device Marking and Package Informatio
tpa80r750c tpb80r750c tpc80r750c tpd80r750c tpp80r750c tpu80r750c.pdf
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TPA80R750C, TPB80R750C, TPC80R750C, TPD80R750C, TPP80R750C, TPU80R750C Wuxi Unigroup Microelectronics Company 800V Super-Junction Power MOSFET FEATURES Very low FOM RDS(on)Qg 100% avalanche tested RoHS compliant APPLICATIONS Switch Mode Power Supply (SMPS) Uninterruptible Power Supply (UPS) Power Factor Correction (PFC) Device Marking and Package
tpc8066-h.pdf
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TPC8066-HMOSFETs Silicon N-Channel MOS (U-MOS-H)TPC8066-HTPC8066-HTPC8066-HTPC8066-H1. Applications1. Applications1. Applications1. Applications High-Efficiency DC-DC Converters Notebook PCs Mobile Handsets2. Features2. Features2. Features2. Features(1) Small, thin package(2) High-speed switching(3) Small gate charge: QSW = 3.2 nC (typ.)(4) Lo
tpc8084.pdf
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TPC8084MOSFETs Silicon N-Channel MOS (U-MOS)TPC8084TPC8084TPC8084TPC80841. Applications1. Applications1. Applications1. Applications Lithium-Ion Secondary Batteries Notebook PCs Mobile Equipments2. Features2. Features2. Features2. Features(1) Small footprint due to a small and thin package(2) Low drain-source on-resistance: RDS(ON) = 5.4 m (typ
tpc8026.pdf
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TPC8026 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOS IV) TPC8026 Lithium Ion Battery Applications Unit: mmPortable Equipment Applications Notebook PC Applications Small footprint due to small and thin package Low drain-source ON resistance: RDS (ON) = 5.1 m (typ.) High forward transfer admittance: |Yfs| = 30 S (typ.) Low leakage curre
tpc8042.pdf
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TPC8042 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOS IV) TPC8042 Lithium-Ion Battery Applications Unit: mmPortable Equipment Applications Notebook PC Applications Small footprint due to a small and thin package Low drain-source ON-resistance: RDS (ON) = 2.7 m (typ.) High forward transfer admittance: |Yfs| = 42 S (typ.) Low leakage curr
tpc8081.pdf
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TPC8081MOSFETs Silicon N-Channel MOS (U-MOS)TPC8081TPC8081TPC8081TPC80811. Applications1. Applications1. Applications1. Applications Notebook PCs Mobile Handsets2. Features2. Features2. Features2. Features(1) Small footprint due to a small and thin package(2) Low drain-source on-resistance: RDS(ON) = 2.5 m (typ.) (VGS = 10 V)(3) Low leakage curren
tpc8004.pdf
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TPC8004 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (-MOSVI) TPC8004 Lithium Ion Battery Applications Unit: mm Portable Equipment Applications Notebook PC Applications Small footprint due to small and thin package Low drain-source ON resistance : R = 37 m (typ.) DS (ON) High forward transfer admittance : |Y | = 6 S (typ.) fs Low leakage current
tpc8053-h.pdf
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TPC8053-H TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (U-MOS-H) TPC8053-H Switching Regulator Applications Motor Drive Applications Unit: mmDC-DC Converter Applications Small footprint due to a small and thin package High-speed switching Small gate charge: QSW = 6.7 nC (typ.) Low drain-source ON-resistance: RDS (ON) = 14.1 m (typ.)
tpc8047-h.pdf
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TPC8047-H TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (U-MOS-H) TPC8047-H Switching Regulator Applications Motor Drive Applications Unit: mmDC-DC Converter Applications Small footprint due to a small and thin package High-speed switching Small gate charge: QSW = 11 nC (typ.) Low drain-source ON-resistance: RDS (ON) = 5.1 m (typ.) H
tpc8016-h.pdf
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TPC8016-H TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (High speed U-MOS III) TPC8016-H High Speed and High Efficiency DC-DC Converters Unit: mmNotebook PC Applications Portable Equipment Applications Small footprint due to small and thin package High speed switching Small gate charge: Qg = 48 nc (typ.) Low drain-source ON resistance: R = 3.7 m
tpc8046-h.pdf
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TPC8046-H TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (U-MOS-H) TPC8046-H Switching Regulator Applications Motor Drive Applications Unit: mmDC-DC Converter Applications Small footprint due to a small and thin package High-speed switching Small gate charge: QSW = 15 nC (typ.) Low drain-source ON-resistance: RDS (ON) = 3.8 m (typ.) H
tpc8020-h.pdf
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TPC8020-H TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (Ultra-High-Speed U-MOSIII) TPC8020-H High-Efficiency DC/DC Converter Applications Unit: mmNotebook PC Applications Portable Equipment Applications Small footprint due to a small and thin package High-speed switching Small gate charge: QSW = 6.9 nC (typ.) Low drain-source ON- resistance: RD
tpc8017-h.pdf
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TPC8017-H TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (Ultra High speed U-MOSIII) TPC8017-H High Speed and High Efficiency DC-DC Converters Unit: mmNotebook PC Applications Portable Equipment Applications Small footprint due to small and thin package High speed switching Small gate charge: Qg = 25 nC (typ.) Low drain-source ON resistance: RDS
tpc8027.pdf
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TPC8027 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOS IV) TPC8027 Lithium Ion Battery Applications Unit: mmPortable Equipment Applications Notebook PC Applications Small footprint due to small and thin package Low drain-source ON resistance: RDS (ON) = 2.1 m (typ.) High forward transfer admittance: |Yfs| = 48 S (typ.) Low leakage curre
tpc8087.pdf
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TPC8087MOSFETs Silicon N-Channel MOS (U-MOS)TPC8087TPC8087TPC8087TPC80871. Applications1. Applications1. Applications1. Applications Notebook PCs Mobile Handsets2. Features2. Features2. Features2. Features(1) Small footprint due to a small and thin package(2) Low drain-source on-resistance: RDS(ON) = 1.7 m (typ.) (VGS = 10 V)(3) Low leakage curren
tpc8033-h.pdf
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TPC8033-H TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (U-MOS-H) TPC8033-H High Efficiency DC/DC Converter Applications Unit: mmNotebook PC Applications Portable Equipment Applications Small footprint due to small and thin package High-speed switching Small gate charge: QSW = 9.6 nC (typ.) Low drain-source ON-resistance: RDS (ON) = 4.0 m (
tpc8059-h.pdf
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TPC8059-HMOSFETs Silicon N-Channel MOS (U-MOS-H)TPC8059-HTPC8059-HTPC8059-HTPC8059-H1. Applications1. Applications1. Applications1. Applications High-Efficiency DC-DC Converters Notebook PCs Mobile Handsets2. Features2. Features2. Features2. Features(1) Small footprint due to a small and thin package(2) High-speed switching(3) Small gate change:
tpc8050-h.pdf
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TPC8050-H TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (U-MOS-H) TPC8050-H Switching Regulator Applications Motor Drive Applications Unit: mmDC-DC Converter Applications Small footprint due to a small and thin package High-speed switching Small gate charge: QSW = 9.2 nC (typ.) Low drain-source ON-resistance: RDS (ON) = 9.3 m (typ.)
tpc8010-h.pdf
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TPC8010-H TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (High speed U-MOSIII) TPC8010-H DC-DC Converters Unit: mmNotebook PC Applications Portable Equipment Applications Small footprint due to small and thin package High speed switching Small gate charge: Q = 18 nC (typ.) g Low drain-source ON resistance: RDS (ON) = 12 m (typ.) High fo
tpc8037-h.pdf
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TPC8037-H TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (U-MOS-H) TPC8037-H High-Efficiency DC-DC Converter Applications Unit: mmNotebook PC Applications Portable Equipment Applications Small footprint due to a small and thin package High-speed switching Small gate charge: QSW = 5.0 nC (typ.) Low drain-source ON-resistance: RDS (ON) = 7.6 m
tpc8032-h.pdf
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TPC8032-H TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (U-MOS-H) TPC8032-H High-Efficiency DC/DC Converter Applications Unit: mmNotebook PC Applications Portable Equipment Applications Small footprint due to a small and thin package High-speed switching Small gate charge: QSW = 8.4 nC (typ.) Low drain-source ON-resistance: RDS (ON) = 5.0 m
tpc8021-h.pdf
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TPC8021-H TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (Ultra-High-Speed U-MOSIII) TPC8021-H High-Efficiency DC-DC Converter Applications Unit: mmNotebook PC Applications Portable Equipment Applications Small footprint due to a small and thin package High-speed switching Small gate charge: QSW = 3.6 nC (typ.) Low drain-source ON-resistance: RDS
tpc8064-h.pdf
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TPC8064-HMOSFETs Silicon N-Channel MOS (U-MOS-H)TPC8064-HTPC8064-HTPC8064-HTPC8064-H1. Applications1. Applications1. Applications1. Applications High-Efficiency DC-DC Converters Notebook PCs Mobile Handsets2. Features2. Features2. Features2. Features(1) Small, thin package(2) High-speed switching(3) Small gate charge: QSW = 5.0 nC (typ.)(4) Lo
tpc8018-h.pdf
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TPC8018-H TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (Ultra-High-Speed U-MOSIII) TPC8018-H High-Speed and High-Efficiency DC/DC Converter Unit: mmApplications Notebook PC Applications Portable-Equipment Applications Small footprint due to a small and thin package High-speed switching Small gate charge: QSW = 12 nC (typ.) Low drain-source ON
tpc8085.pdf
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TPC8085MOSFETs Silicon N-Channel MOS (U-MOS)TPC8085TPC8085TPC8085TPC80851. Applications1. Applications1. Applications1. Applications Lithium-Ion Secondary Batteries Power Management Switches Notebook PCs2. Features2. Features2. Features2. Features(1) Small footprint due to a small and thin package(2) Low drain-source on-resistance: RDS(ON) = 3.8 m
tpc8024-h.pdf
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TPC8024-H TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (Ultra-High-Speed U-MOSIII) TPC8024-H High-Efficiency DCDC Converter Applications Unit: mmNotebook PC Applications Portable Equipment Applications Small footprint due to a small and thin package High-speed switching Small gate charge: QSW = 6.9 nC (typ.) Low drain-source ON-resistance: R
tpc8092.pdf
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TPC8092MOSFETs Silicon N-Channel MOS (U-MOS)TPC8092TPC8092TPC8092TPC80921. Applications1. Applications1. Applications1. Applications Lithium-Ion Secondary Batteries Power Management Switches Notebook PCs2. Features2. Features2. Features2. Features(1) Small footprint due to a small and thin package(2) Low drain-source on-resistance: RDS(ON) = 7.6 m
tpc8067-h.pdf
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TPC8067-HMOSFETs Silicon N-Channel MOS (U-MOS-H)TPC8067-HTPC8067-HTPC8067-HTPC8067-H1. Applications1. Applications1. Applications1. Applications High-Efficiency DC-DC Converters Notebook PCs Mobile Handsets2. Features2. Features2. Features2. Features(1) Small, thin package(2) High-speed switching(3) Small gate charge: QSW = 1.9 nC (typ.)(4) Lo
tpc8041.pdf
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TPC8041 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOS IV) TPC8041 Lithium Ion Battery Applications Unit: mmPortable Equipment Applications Notebook PC Applications Small footprint due to small and thin package Low drain-source ON-resistance: RDS (ON) = 5.5 m (typ.) High forward transfer admittance: |Yfs| = 26 S (typ.) Low leakage curren
tpc8055-h.pdf
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TPC8055-HMOSFETs Silicon N-Channel MOS (U-MOS-H)TPC8055-HTPC8055-HTPC8055-HTPC8055-H1. Applications1. Applications1. Applications1. Applications High-Efficiency DC-DC Converters Notebook PCs Mobile Handsets2. Features2. Features2. Features2. Features(1) Small footprint due to a small and thin package(2) High-speed switching(3) Small gate change:
tpc8063-h.pdf
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TPC8063-HMOSFETs Silicon N-Channel MOS (U-MOS-H)TPC8063-HTPC8063-HTPC8063-HTPC8063-H1. Applications1. Applications1. Applications1. Applications High-Efficiency DC-DC Converters Notebook PCs Mobile Handsets2. Features2. Features2. Features2. Features(1) Small footprint due to a small and thin package(2) High-speed switching(3) Small gate change:
tpc8014.pdf
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TPC8014 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOS III) TPC8014 Lithium Ion Battery Applications Unit: mmPortable Equipment Applications Notebook PC Applications Small footprint due to small and thin package Low drain-source ON resistance: RDS (ON) = 11 m (typ.) High forward transfer admittance: |Yfs| = 10 S (typ.) Low leakage curre
tpc8078.pdf
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TPC8078MOSFETs Silicon N-Channel MOS (U-MOS)TPC8078TPC8078TPC8078TPC80781. Applications1. Applications1. Applications1. Applications Lithium-Ion Secondary Batteries Notebook PCs Mobile Equipments2. Features2. Features2. Features2. Features(1) Small footprint due to a small and thin package(2) Low drain-source on-resistance: RDS(ON) = 1.9 m (typ
tpc8025.pdf
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TPC8025 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOS IV) TPC8025 Lithium-Ion Battery Applications Unit: mmPortable Equipment Applications Notebook PC Applications Small footprint due to a small and thin package Low drain-source ON-resistance: RDS (ON) = 7.5 m (typ.) High forward transfer admittance: |Yfs| = 26 S (typ.) Low leakage cur
tpc8001.pdf
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TPC8001 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (-MOSVI) TPC8001 Lithium Ion Battery Applications Unit: mmPortable Equipment Applications Notebook PC Applications Small footprint due to small and thin package Low drain-source ON resistance : R = 15 m (typ.) DS (ON) High forward transfer admittance : |Y | = 11 S (typ.) fs Low leakage current
tpc8013-h.pdf
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TPC8013-H TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (High speed U-MOS III) TPC8013-H High Speed and High Efficiency DC-DC Converters Unit: mmNotebook PC Applications Portable Equipment Applications Small footprint due to small and thin package High speed switching Small gate charge: Qg = 48 nc (typ.) Low drain-source ON resistance: RDS (ON)
tpc8065-h.pdf
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TPC8065-HMOSFETs Silicon N-Channel MOS (U-MOS-H)TPC8065-HTPC8065-HTPC8065-HTPC8065-H1. Applications1. Applications1. Applications1. Applications High-Efficiency DC-DC Converters Notebook PCs Mobile Handsets2. Features2. Features2. Features2. Features(1) Small, thin package(2) High-speed switching(3) Small gate charge: QSW = 4.3 nC (typ.)(4) Lo
tpc8022-h.pdf
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TPC8022-H TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (Ultra-High-Speed U-MOS III) TPC8022-H High-Efficiency DC/DC Converter Applications Unit: mmNotebook PC Applications Portable-Equipment Applications CCFL Inverter Applications Small footprint due to a small and thin package High speed switching Small gate charge : QSW = 3.5 nC (typ.) Low drain-so
tpc8038-h.pdf
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TPC8038-H TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (U-MOS-H) TPC8038-H High-Efficiency DC-DC Converter Applications Unit: mmNotebook PC Applications Portable Equipment Applications Small footprint due to a small and thin package High-speed switching Small gate charge: QSW = 5.0 nC (typ.) Low drain-source ON-resistance: RDS (ON) = 7.6 m
tpc8086.pdf
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TPC8086MOSFETs Silicon N-Channel MOS (U-MOS)TPC8086TPC8086TPC8086TPC80861. Applications1. Applications1. Applications1. Applications Lithium-Ion Secondary Batteries Power Management Switches Notebook PCs2. Features2. Features2. Features2. Features(1) Small footprint due to a small and thin package(2) Low drain-source on-resistance: RDS(ON) = 5.0 m
tpc8089-h.pdf
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TPC8089-HMOSFETs Silicon N-Channel MOS (U-MOS-H)TPC8089-HTPC8089-HTPC8089-HTPC8089-H1. Applications1. Applications1. Applications1. Applications Switching Voltage Regulators Motor Drivers DC-DC Converters2. Features2. Features2. Features2. Features(1) High-speed switching(2) Small gate charge: QSW = 3.6 nC (typ.)(3) Low drain-source on-resistanc
tpc8060-h.pdf
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TPC8060-H TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (U-MOS-H) TPC8060-H High Efficiency DC-DC Converter Applications Unit: mmNotebook PC Applications Portable Equipment Applications Small footprint due to a small and thin package High-speed switching Small gate charge: QSW = 16 nC (typ.) Low drain-source ON-resistance: RDS (ON) = 3.1 m
tpc8034-h.pdf
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TPC8034-H TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (U-MOS-H) TPC8034-H High-Efficiency DC/DC Converter Applications Unit: mmNotebook PC Applications Portable Equipment Applications Small footprint due to a small and thin package High-speed switching Small gate charge: QSW = 16 nC (typ.) Low drain-source ON-resistance: RDS (ON) = 2.6 m
tpc8030.pdf
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TPC8030 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOS IV) TPC8030 Lithium Ion Battery Applications Unit: mmPortable Equipment Applications Notebook PC Applications Small footprint due to small and thin package Low drain-source ON-resistance: RDS (ON) = 7.5 m (typ.) High forward transfer admittance: |Yfs| = 26 S (typ.) Low leakage curren
tpc8052-h.pdf
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TPC8052-H TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (U-MOS-H) TPC8052-H Switching Regulator Applications Motor Drive Applications Unit: mmDC-DC Converter Applications Small footprint due to a small and thin package High-speed switching Small gate charge: QSW = 6.6 nC (typ.) Low drain-source ON-resistance: RDS (ON) = 7.4 m (typ.)
tpc8031-h.pdf
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TPC8031-H TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (U-MOS-H) TPC8031-H High-Efficiency DC/DC Converter Applications Unit: mmNotebook PC Applications Portable Equipment Applications Small footprint due to a small and thin package High-speed switching Small gate charge: QSW = 5.0 nC (typ.) Low drain-source ON-resistance: RDS (ON) = 10.1 m
tpc8049-h.pdf
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TPC8049-H TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (U-MOS-H) TPC8049-H Switching Regulator Applications Motor Drive Applications Unit: mmDC-DC Converter Applications Small footprint due to a small and thin package High-speed switching Small gate charge: QSW = 13 nC (typ.) Low drain-source ON-resistance: RDS (ON) = 6.9 m (typ.) H
tpc8061-h.pdf
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TPC8061-H TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (U-MOS-H) TPC8061-H High Efficiency DC-DC Converter Applications Unit: mmNotebook PC Applications Portable Equipment Applications Small footprint due to a small and thin package High-speed switching Small gate charge: QSW = 3.5 nC (typ.) Low drain-source ON-resistance: RDS (ON) = 21 m
tpc8062-h.pdf
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TPC8062-HMOSFETs Silicon N-Channel MOS (U-MOS-H)TPC8062-HTPC8062-HTPC8062-HTPC8062-H1. Applications1. Applications1. Applications1. Applications High-Efficiency DC-DC Converters Notebook PCs Mobile Handsets2. Features2. Features2. Features2. Features(1) Small footprint due to a small and thin package(2) High-speed switching(3) Small gate change:
tpc8012-h.pdf
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TPC8012-H TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (F-MOSV) TPC8012-H Switching Regulator Application Unit: mmDC-DC Converters Low drain-source ON resistance: RDS (ON) = 0.28 (typ.) High forward transfer admittance: |Y | = 1.35 S (typ.) fs Low leakage current: I = 100 A (max) (V = 200 V) DSS DS Enhancement mode: Vth = 3.0 to 5.0 V (VD
tpc8080.pdf
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TPC8080MOSFETs Silicon N-Channel MOS (U-MOS)TPC8080TPC8080TPC8080TPC80801. Applications1. Applications1. Applications1. Applications Notebook PCs Mobile Handsets2. Features2. Features2. Features2. Features(1) Small footprint due to a small and thin package(2) Low drain-source on-resistance: RDS(ON) = 2.2 m (typ.) (VGS = 10 V)(3) Low leakage curren
tpc8036-h.pdf
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TPC8036-H TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (U-MOS-H) TPC8036-H High Efficiency DC-DC Converter Applications Notebook PC Applications Unit: mmPortable Equipment Applications Small footprint due to a small and thin package High-speed switching Small gate charge: Q = 13 nC (typ.) SW Low drain-source ON-resistance: R = 3.1 m (typ.
tpc8051-h.pdf
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TPC8051-H TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (U-MOS-H) TPC8051-H Switching Regulator Applications Motor Drive Applications Unit: mmDC-DC Converter Applications Small footprint due to a small and thin package High-speed switching Small gate charge: QSW = 16 nC (typ.) Low drain-source ON-resistance: RDS (ON) = 6.3 m (typ.) H
tpc8088.pdf
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TPC8088MOSFETs Silicon N-Channel MOS (U-MOS)TPC8088TPC8088TPC8088TPC80881. Applications1. Applications1. Applications1. Applications Notebook PCs Mobile Handsets2. Features2. Features2. Features2. Features(1) Small footprint due to a small and thin package(2) Low drain-source on-resistance: RDS(ON) = 1.9 m (typ.) (VGS = 10 V)(3) Low leakage curren
tpc8040-h.pdf
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TPC8040-H TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (U-MOS-H) TPC8040-H High Efficiency DC-DC Converter Applications Unit: mmNotebook PC Applications Portable Equipment Applications Small footprint due to a small and thin package High-speed switching Small gate charge: QSW = 5.1 nC (typ.) Low drain-source ON-resistance: RDS (ON) = 6.4 m
tpc8074.pdf
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TPC8074MOSFETs Silicon N-Channel MOS (U-MOS)TPC8074TPC8074TPC8074TPC80741. Applications1. Applications1. Applications1. Applications Lithium-Ion Secondary Batteries Power Management Switches Notebook PCs2. Features2. Features2. Features2. Features(1) Small footprint due to a small and thin package(2) Low drain-source on-resistance: RDS(ON) = 5.1 m
tpc8029.pdf
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TPC8029 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOS IV) TPC8029 Lithium Ion Battery Applications Unit: mmPortable Equipment Applications Notebook PC Applications Small footprint due to small and thin package Low drain-source ON resistance: RDS (ON) = 2.9 m (typ.) High forward transfer admittance: |Yfs| = 40 S (typ.) Low leakage curre
tpc8035-h.pdf
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TPC8035-H TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (U-MOS-H) TPC8035-H High Efficiency DC-DC Converter Applications Notebook PC Applications Unit: mmPortable Equipment Applications Small footprint due to small and thin package High-speed switching Small gate charge: Q = 17 nC (typ.) SW Low drain-source ON-resistance: R = 2.3 m (typ.)
tpc8039-h.pdf
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TPC8039-H TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (U-MOS-H) TPC8039-H High Efficiency DC-DC Converter Applications Notebook PC Applications Unit: mmPortable Equipment Applications Small footprint due to a small and thin package High-speed switching Small gate charge: Q = 8.6 nC (typ.) SW Low drain-source ON-resistance: R = 4.1 m (typ
tpc8003.pdf
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TPC8003 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSII) TPC8003 Lithium Ion Battery Applications Portable Equipment Applications Unit: mmNotebook PC Applications Small footprint due to small and thin package Low drain-source ON resistance : R = 5.4 m (typ.) DS (ON) High forward transfer admittance : |Y | = 21 S (typ.) fs Low leakage current
tpc8009-h.pdf
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TPC8009-H TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (High speed U-MOSIII) TPC8009-H High Speed and High Efficiency DC-DC Converters Unit: mmNotebook PC Applications Portable Equipment Applications Small footprint due to small and thin package High speed switching Small gate charge: Q = 29 nC (typ.) g Low drain-source ON resistance: R = 8 m
tpc8075.pdf
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TPC8075MOSFETs Silicon N-Channel MOS (U-MOS)TPC8075TPC8075TPC8075TPC80751. Applications1. Applications1. Applications1. Applications Lithium-Ion Secondary Batteries Notebook PCs Mobile Equipments2. Features2. Features2. Features2. Features(1) Small footprint due to a small and thin package(2) Low drain-source on-resistance: RDS(ON) = 2.1 m (typ
tpc8028.pdf
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TPC8028 NMOS (U-MOS) TPC8028 : mm PC : RDS (ON) = 3.5m () : |Yfs| = 40 S (
tpc8076.pdf
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TPC8076MOSFETs Silicon N-Channel MOS (U-MOS)TPC8076TPC8076TPC8076TPC80761. Applications1. Applications1. Applications1. Applications Lithium-Ion Secondary Batteries Notebook PCs Mobile Equipments2. Features2. Features2. Features2. Features(1) Small footprint due to a small and thin package(2) Low drain-source on-resistance: RDS(ON) = 3.9 m (typ
tpc8056-h.pdf
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TPC8056-HMOSFETs Silicon N-Channel MOS (U-MOS-H)TPC8056-HTPC8056-HTPC8056-HTPC8056-H1. Applications1. Applications1. Applications1. Applications High-Efficiency DC-DC Converters Notebook PCs Mobile Handsets2. Features2. Features2. Features2. Features(1) Small footprint due to a small and thin package(2) High-speed switching(3) Small gate change:
tpc8048-h.pdf
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TPC8048-H TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (U-MOS-H) TPC8048-H Switching Regulator Applications Motor Drive Applications Unit: mmDC-DC Converter Applications Small footprint due to a small and thin package High-speed switching Small gate charge: QSW = 17 nC (typ.) Low drain-source ON-resistance: RDS (ON) = 4.6 m (typ.) H
tpc8057-h.pdf
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TPC8057-HMOSFETs Silicon N-Channel MOS (U-MOS-H)TPC8057-HTPC8057-HTPC8057-HTPC8057-H1. Applications1. Applications1. Applications1. Applications High-Efficiency DC-DC Converters Notebook PCs Mobile Handsets2. Features2. Features2. Features2. Features(1) Small footprint due to a small and thin package(2) High-speed switching(3) Small gate change:
tpc8058-h.pdf
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TPC8058-HMOSFETs Silicon N-Channel MOS (U-MOS-H)TPC8058-HTPC8058-HTPC8058-HTPC8058-H1. Applications1. Applications1. Applications1. Applications High-Efficiency DC-DC Converters Notebook PCs Mobile Handsets2. Features2. Features2. Features2. Features(1) Small footprint due to a small and thin package(2) High-speed switching(3) Small gate change:
tpc8073.pdf
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TPC8073MOSFETs Silicon N-Channel MOS (U-MOS)TPC8073TPC8073TPC8073TPC80731. Applications1. Applications1. Applications1. Applications Lithium-Ion Secondary Batteries Power Management Switches Notebook PCs2. Features2. Features2. Features2. Features(1) Small footprint due to a small and thin package(2) Low drain-source on-resistance: RDS(ON) = 3.8 m
tpc8082.pdf
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TPC8082MOSFETs Silicon N-Channel MOS (U-MOS)TPC8082TPC8082TPC8082TPC80821. Applications1. Applications1. Applications1. Applications Notebook PCs Mobile Handsets2. Features2. Features2. Features2. Features(1) Small footprint due to a small and thin package(2) Low drain-source on-resistance: RDS(ON) = 3.1 m (typ.) (VGS = 10 V)(3) Low leakage curren
tpc8045-h.pdf
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TPC8045-H TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (U-MOS-H) TPC8045-H Switching Regulator Applications Motor Drive Applications Unit: mmDC-DC Converter Applications Small footprint due to a small and thin package High-speed switching Small gate charge: QSW = 23 nC (typ.) Low drain-source ON-resistance: RDS (ON) = 2.7 m (typ.) H
tpc8018-h.pdf
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TPC8018-Hwww.VBsemi.twN-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-freeVDS (V) RDS(on) ()ID (A)a Qg (Typ.) TrenchFET Power MOSFET0.004 at VGS = 10 V 1830 6.8 nC Optimized for High-Side Synchronous0.005 at VGS = 4.5 V 16Rectifier Operation 100 % Rg Tested 100 % UIS TestedAPPLICATIONS Notebook CPU Core- High-Side Switch
tpc8028.pdf
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TPC8028www.VBsemi.twN-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-freeVDS (V) RDS(on) ()ID (A)a Qg (Typ.) TrenchFET Power MOSFET0.004 at VGS = 10 V 1830 6.8 nC Optimized for High-Side Synchronous0.005 at VGS = 4.5 V 16Rectifier Operation 100 % Rg Tested 100 % UIS TestedAPPLICATIONS Notebook CPU Core- High-Side SwitchSO
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