TPW60R040MFD. Аналоги и основные параметры
Наименование производителя: TPW60R040MFD
Тип транзистора: MOSFET
Полярность: N
Предельные значения
Pd ⓘ - Максимальная рассеиваемая мощность: 500 W
|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 600 V
|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 30 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 72 A
Tj ⓘ - Максимальная температура канала: 150 °C
Электрические характеристики
tr ⓘ - Время нарастания: 90 ns
Cossⓘ - Выходная емкость: 283 pf
RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.04 Ohm
Тип корпуса: TO247
Аналог (замена) для TPW60R040MFD
- подборⓘ MOSFET транзистора по параметрам
TPW60R040MFD даташит
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