Справочник MOSFET. TPW60R080M

 

TPW60R080M MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: TPW60R080M
   Маркировка: 60R080M
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 391 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 600 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 30 V
   |Vgs(th)|ⓘ - Пороговое напряжение включения: 4.5 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 47 A
   Tjⓘ - Максимальная температура канала: 150 °C
   Qgⓘ - Общий заряд затвора: 75 nC
   trⓘ - Время нарастания: 85.8 ns
   Cossⓘ - Выходная емкость: 140 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.08 Ohm
   Тип корпуса: TO247

 Аналог (замена) для TPW60R080M

 

 

TPW60R080M Datasheet (PDF)

 ..1. Size:445K  cn wuxi unigroup
 tpw60r080m.pdf

TPW60R080M TPW60R080M

TPW60R080M Wuxi Unigroup Microelectronics Co.,Ltd 600V Super-Junction Power MOSFET DESCRIPTION 600V super-junction Power MOSFET Super-junction power MOSFET is a revolutionary technology for high voltage power MOSFETsdesigned according to the SJ principle. The SJ MOSFET is a price-performance optimized product enabling to target cost sensitive applications in Consumer and Lighti

 5.1. Size:359K  cn wuxi unigroup
 tpv60r080cfd tpw60r080cfd.pdf

TPW60R080M TPW60R080M

TPV60R080CFD, TPW60R080CFD Wuxi Unigroup Microelectronics Company 600V Super-Junction Power MOSFET FEATURES Very low FOM RDS(on)Qg 100% avalanche tested RoHS compliant Fast Body Diode APPLICATIONS Switch Mode Power Supply (SMPS) Uninterruptible Power Supply (UPS) Power Factor Correction (PFC) Device Marking and Package Information Device

 7.1. Size:457K  cn wuxi unigroup
 tpw60r040mfd.pdf

TPW60R080M TPW60R080M

TPW60R040MFDWuxi Unigroup Microelectronics Co.,Ltd600V Super-junction Power MOSFETDESCRIPTION600V Super-junction Power MOSFETSuper-junction power MOSFET is a revolutionary technology for high voltage power MOSFETsdesigned according to the SJ principle and pioneered. The Multi-EPI SJ MOSFET provide an extremely fast and robust body diode. Also provide an extremely low switching,

 7.2. Size:454K  cn wuxi unigroup
 tpw60r090mfd.pdf

TPW60R080M TPW60R080M

TPW60R090MFD Wuxi Unigroup Microelectronics Co.,Ltd 600V Super-Junction Power MOSFET DESCRIPTION 600V super-junction Power MOSFET Super-junction power MOSFET is a revolutionary technology for high voltage power MOSFETsdesigned according to the SJ principle. The SJ MOSFET is a price-performance optimized product enabling to target cost sensitive applications in Consumer and Ligh

Другие MOSFET... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

History: SWD088R08E8T

 

 
Back to Top