Справочник MOSFET. TPW65R040M

 

TPW65R040M Даташит. Основные параметры и характеристики. Поиск аналогов


   Наименование прибора: TPW65R040M
   Тип транзистора: MOSFET
   Полярность: N
   Pd ⓘ - Максимальная рассеиваемая мощность: 500 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 650 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 30 V
   |Id| ⓘ - Максимально допустимый постоянный ток стока: 72 A
   Tj ⓘ - Максимальная температура канала: 150 °C
   tr ⓘ - Время нарастания: 161 ns
   Cossⓘ - Выходная емкость: 268 pf
   Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.04 Ohm
   Тип корпуса: TO247
 

 Аналог (замена) для TPW65R040M

   - подбор ⓘ MOSFET транзистора по параметрам

 

TPW65R040M Datasheet (PDF)

 ..1. Size:452K  cn wuxi unigroup
tpw65r040m.pdfpdf_icon

TPW65R040M

TPW65R040M Wuxi Unigroup Microelectronics Co.,Ltd 650V Super-Junction Power MOSFET DESCRIPTION 650V super-junction Power MOSFET Super-junction power MOSFET is a revolutionary technology for high voltage power MOSFETsdesigned according to the SJ principle. The SJ MOSFET is a price-performance optimized product enabling to target cost sensitive applications in Consumer and Lighti

 6.1. Size:452K  cn wuxi unigroup
tpw65r044mfd.pdfpdf_icon

TPW65R040M

TPW65R044MFD Wuxi Unigroup Microelectronics Co.,Ltd 650V Super-Junction Power MOSFET DESCRIPTION 650V super-junction Power MOSFET Super-junction power MOSFET is a revolutionary technology for high voltage power MOSFETsdesigned according to the SJ principle. The SJ MOSFET is a price-performance optimized product enabling to target cost sensitive applications in Consumer and Ligh

 7.1. Size:773K  cn wuxi unigroup
tpa65r070d tpb65r070d tpp65r070d tpw65r070d.pdfpdf_icon

TPW65R040M

TPA65R070D,TPB65R070D,TPP65R070D,TPW65R070D Wuxi Unigroup Microelectronics Co.,Ltd650V Super-junction Power MOSFETDescription650V Super-junction Power MOSFETSuper-junction power MOSFET is a revolutionary technology for high voltage power MOSFETsdesigned according to the SJ principle. The deep trench SJ MOSFET provide an extremely low switching, communication and conduction losse

 7.2. Size:753K  cn wuxi unigroup
tpb65r075dfd tpp65r075dfd tpw65r075dfd.pdfpdf_icon

TPW65R040M

TPB65R075DFD,TPP65R075DFD,TPW65R075DFDWuxi Unigroup Microelectronics Co.,Ltd650V Super-junction Power MOSFETDescription650V Super-junction Power MOSFETSuper-junction power MOSFET is a revolutionary technology for high voltage power MOSFETsdesigned according to the SJ principle. The deep trench SJ MOSFET provide an extremely low switching, communication and conduction losses devic

Другие MOSFET... TPW60R120MFD , TPV60R080CFD , TPW60R080CFD , TPV65R080C , TPW65R080C , TPW60R040MFD , TPW60R080M , TPW60R090MFD , AO3407 , TPW65R044MFD , TPW65R090M , TPW65R190MFD , TPW70R100MFD , TPW80R200MFD , TPW80R300MFD , TPY70R1K5MB , TSB15N06A .

History: CJ3139KDW | APM4012NU | FDS5170N7 | IXTQ96N15P | CEB6060N | AD8N60S

 

 
Back to Top

 


 
.