FDB8453LZ - Даташиты. Аналоги. Основные параметры

August 2007FDB8453LZtmN-Channel PowerTrench MOSFET 40V, 50A, 7.0mFeatures General Description Max rDS(on) = 7.0m at VGS = 10V, ID = 17.6A This N-Channel MOSFET is produced using FairchildSemiconductors advanced PowerTrench process that has Max rDS(on) = 9.0m at VGS = 4.5V, ID = 14.9Abeen especially tailored to minimize the on-state resistance and HBM ESD pr

May 2010FDB8442_F085N-Channel PowerTrench MOSFET40V, 80A, 2.9m Features Applications Automotive Engine Control Typ rDS(on) = 2.1m at VGS = 10V, ID = 80A Powertrain Management Typ Qg(10) = 181nC at VGS = 10V Solenoid and Motor Drivers Low Miller Charge Electronic Steering Low Qrr Body Diode Integrated Starter / Alternator UIS Capability (Single Pulse and Repet

January 2006FDB8445N-Channel PowerTrench MOSFET40V, 70A, 9m Features Applications Automotive Engine Control Typ rDS(on) = 6.8m at VGS = 10V, ID = 70A Powertrain Management Typ Qg(10) = 44nC at VGS = 10V Solenoid and Motor Drivers Low Miller Charge Electronic Transmission Low Qrr Body Diode Distributed Power Architecture and VRMs UIS Capability (Single Pulse/

November 2006FDB8442N-Channel PowerTrench MOSFET40V, 80A, 2.9m Features Applications Automotive Engine Control Typ rDS(on) = 2.1m at VGS = 10V, ID = 80A Powertrain Management Typ Qg(10) = 181nC at VGS = 10V Solenoid and Motor Drivers Low Miller Charge Electronic Steering Low Qrr Body Diode Integrated Starter / Alternator UIS Capability (Single Pulse and Repet

October 2010FDB8445_F085N-Channel PowerTrench MOSFET40V, 70A, 9m Features Applications Automotive Engine Control Typ rDS(on) = 6.8m at VGS = 10V, ID = 70A Powertrain Management Typ Qg(10) = 44nC at VGS = 10V Solenoid and Motor Drivers Low Miller Charge Electronic Transmission Low Qrr Body Diode Distributed Power Architecture and VRMs UIS Capability (Single Puls

August 2006FDB8441N-Channel PowerTrench MOSFET40V, 80A, 2.5m Features Applications Automotive Engine Control Typ rDS(on) = 1.9m at VGS = 10V, ID = 80A Powertrain Management Typ Qg(10) = 215nC at VGS = 10V Low Miller Charge Solenoid and Motor Drivers Low Qrr Body Diode Electronic Steering UIS Capability (Single Pulse and Repetitive Pulse) Integrated Starter /

August 2007FDB8444TStmN-Channel PowerTrench MOSFET with Temperature Sensor40V, 70A, 5m Features Applications Typ rDS(on) = 3.8m at VGS = 10V, ID = 70A Automotive Engine Control Typ Qg(TOT) = 130nC at VGS = 10V Powertrain Management Low Miller Charge Solenoid and Motor Drivers Low Qrr Body Diode Electronic Transmission UIS Capability (Single Pulse and Repetitive Pul

June 2011FDB8443tmN-Channel PowerTrench MOSFET 40V, 182A, 3.0m ApplicationsFeatures Typ rDS(on) = 2.3m at VGS = 10V, ID = 80A Power Tools Typ Qg(10) = 142nC at VGS = 10V Automotive Engine Control Low Miller Charge Powertrain Management Low Qrr Body Diode Solenoid and Motor Drivers UIS Capability (Single Pulse and Repetitive Pulse) Electronic Steering RoHS Comp

February 2006FDB8444N-Channel PowerTrench MOSFET40V, 70A, 5.5m Features Applications Automotive Engine Control Typ rDS(on) = 3.9m at VGS = 10V, ID = 70A Powertrain Management Typ Qg(TOT) = 91nC at VGS = 10V Solenoid and Motor Drivers Low Miller Charge Electronic Transmission Low Qrr Body Diode Distributed Power Architecture and VRMs UIS Capability (Single Pul

May 2010FDB8441_F085N-Channel PowerTrench MOSFET40V, 80A, 2.5m Features Applications Automotive Engine Control Typ rDS(on) = 1.9m at VGS = 10V, ID = 80A Powertrain Management Typ Qg(10) = 215nC at VGS = 10V Low Miller Charge Solenoid and Motor Drivers Low Qrr Body Diode Electronic Steering UIS Capability (Single Pulse and Repetitive Pulse) Integrated Starter

October 2010FDB8444_F085N-Channel PowerTrench MOSFET40V, 70A, 5.5m Features Applications Automotive Engine Control Typ rDS(on) = 3.9m at VGS = 10V, ID = 70A Powertrain Management Typ Qg(TOT) = 91nC at VGS = 10V Solenoid and Motor Drivers Low Miller Charge Electronic Transmission Low Qrr Body Diode Distributed Power Architecture and VRMs UIS Capability (Single P

February 2007FDB8447L40V N-Channel PowerTrench MOSFET 40V, 50A, 8.5mFeatures General Description Max rDS(on) = 8.5m at VGS = 10V, ID = 14AThis N-Channel MOSFET has been produced using Fairchild Semiconductors proprietary PowerTrench technology to Max rDS(on) = 11m at VGS = 4.5V, ID = 11Adeliver low rDS(on) and optimized BVDSS capability to offer Fast Switch

March 2009FDB8443_F085N-Channel PowerTrench MOSFET 40V, 80A, 3.0m ApplicationsFeatures Typ rDS(on) = 2.3m at VGS = 10V, ID = 80A Automotive Engine Control Typ Qg(10) = 142nC at VGS = 10V Powertrain Management Low Miller Charge Solenoid and Motor Drivers Low Qrr Body Diode Electronic Steering UIS Capability (Single Pulse and Repetitive Pulse) Integrated Starter / A

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

August 2006FDB8441N-Channel PowerTrench MOSFET40V, 80A, 2.5m Features Applications Automotive Engine Control Typ rDS(on) = 1.9m at VGS = 10V, ID = 80A Powertrain Management Typ Qg(10) = 215nC at VGS = 10V Low Miller Charge Solenoid and Motor Drivers Low Qrr Body Diode Electronic Steering UIS Capability (Single Pulse and Repetitive Pulse) Integrated Starter /

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur