VBE1307 - аналоги, параметры транзистора - Справочник транзисторов

VBE1307 технические параметры

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VBE1307 www.VBsemi.com N-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) RDS(on) ( ) ID (A)a, e Qg (Typ) 100 % Rg and UIS Tested Compliant to RoHS Directive 2011/65/EU 0.005 at VGS = 10 V 80 30 31 nC 0.006 at VGS = 4.5 V 68 APPLICATIONS D OR-ing TO-252 Server DC/DC G G D S Top View S N-Channel MOSFET ABSOLU

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VBE1303 www.VBsemi.com N-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) RDS(on) ( ) ID (A)a, e Qg (Typ) 100 % Rg and UIS Tested Compliant to RoHS Directive 2011/65/EU 0.002 at VGS = 10 V 100 30 72 nC 0.003 at VGS = 4.5 V 90 APPLICATIONS D OR-ing Server TO-252 DC/DC G G D S Top View S N-Channel MOSFET ABSO

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vbe1302.pdf pdf_icon

VBE1302 www.VBsemi.com N-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) RDS(on) ( ) ID (A)a, e Qg (Typ) 100 % Rg and UIS Tested Compliant to RoHS Directive 2011/65/EU 0.0023 at VGS = 10 V 120 30 82 nC 0.0032 at VGS = 4.5 V 100 APPLICATIONS D OR-ing Server TO-252 DC/DC G G D S Top View S N-Channel MOSFET A

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vbe1310.pdf pdf_icon

VBE1310 www.VBsemi.com N-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) RDS(on) ( ) ID (A)a, e Qg (Typ) 100 % Rg and UIS Tested Compliant to RoHS Directive 2011/65/EU 0.007 at VGS = 10 V 50 30 25 nC 0.009 at VGS = 4.5 V 40 APPLICATIONS D OR-ing Server TO-252 DC/DC G G D S S Top View N-Channel MOSFET ABSOL

Другие MOSFET... VBE1158N , VBE1201K , VBE1202 , VBE1203M , VBE1206 , VBE1206N , VBE1302 , VBE1303 , IRF540N , VBE1310 , VBE1405 , VBE1410 , VBE1606 , VBE1615 , VBE1638 , VBE165R02 , VBE165R04 .