Справочник MOSFET. VBL165R18

 

VBL165R18 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: VBL165R18
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 208 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 650 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 30 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 18 A
   Tjⓘ - Максимальная температура канала: 150 °C
   trⓘ - Время нарастания: 34 ns
   Cossⓘ - Выходная емкость: 105 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.36 Ohm
   Тип корпуса: TO263

 Аналог (замена) для VBL165R18

 

 

VBL165R18 Datasheet (PDF)

 ..1. Size:1102K  cn vbsemi
vbl165r18.pdf

VBL165R18
VBL165R18

VBL165R18www.VBsemi.comN-Channel 650 V (D-S) MOSFETPRODUCT SUMMARYFEATURESVDS (V) at TJ max. 650 Reduced trr, Qrr, and IRRMRDS(on) max. () at 25 C VGS = 10 V 0.36 Low figure-of-merit (FOM) Ron x QgQg max. (nC) 106 Low input capacitance (Ciss)Qgs (nC) 14 Low switching losses due to reduced Qrr Ultra low gate charge (Qg)Qgd (nC) 33 Avalanche en

 6.1. Size:1406K  cn vbsemi
vbm165r10 vbmb165r10 vbl165r10.pdf

VBL165R18
VBL165R18

VBM165R10 / VBMB165R10/ VBL165R10www.VBsemi.comN-Channel 650V (D-S) Power MOSFETFEATURESPRODUCT SUMMARYVDS (V) at TJ max. 670 Low figure-of-merit (FOM) Ron x Qg Available Low input capacitance (Ciss) RoHSRDS(on) max. at 25 C () VGS = 10 V 0.8643 Reduced switching and conduction lossesQg max. (nC) Ultra low gate charge (Qg)5Qgs (nC) Avalanche ener

 6.2. Size:1339K  cn vbsemi
vbm165r12 vbmb165r12 vbl165r12.pdf

VBL165R18
VBL165R18

VBM165R12 / VBMB165R12/ VBL165R12www.VBsemi.comN-Channel 650V (D-S) Power MOSFETFEATURESPRODUCT SUMMARYVDS (V) at TJ max. 650 Low figure-of-merit (FOM) Ron x Qg Low input capacitance (Ciss)RDS(on) max. at 25 C () VGS = 10 V 0.6843 Reduced switching and conduction lossesQg max. (nC) Ultra low gate charge (Qg)5Qgs (nC) Avalanche energy rated (UIS)

 7.1. Size:895K  cn vbsemi
vbm165r20s vbmb165r20s vbp165r20s vbl165r20s.pdf

VBL165R18
VBL165R18

VBM165R20S / VBMB165R20SVBP165R20S / VBL165R20Swww.VBsemi.comN-Channel 650-V (D-S) Super Junction MOSFETFEATURESPRODUCT SUMMARY Reduced trr, Qrr, and IRRMVDS (V) at TJ max. 650 Low figure-of-merit (FOM) Ron x QgRDS(on) max. () at 25 C VGS = 10 V 0.19 Low input capacitance (Ciss)Qg max. (nC) 106 Low switching losses due to reduced QrrQgs (nC) 14 Ul

 7.2. Size:1281K  cn vbsemi
vbl165r04.pdf

VBL165R18
VBL165R18

VBL165R04 www.VBsemi.comN-Channel 650 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Low Gate Charge Qg Results in Simple DriveVDS (V) 650AvailableRequirementRDS(on) ()VGS = 10 V 2.1RoHS Improved Gate, Avalanche and Dynamic dV/dtQg (Max.) (nC) 48RuggednessQgs (nC) 12 Fully Characterized Capacitance and Avalanche Voltageand CurrentQgd (nC) 19 Compliant to

Другие MOSFET... AM3401 , AM3402N , AM3403P , AM3405P , AM3406 , AM3406N , AM3407 , AM3407PE , 60N06 , AM3412N , AM3413 , AM3413P , AM3415 , AM3415A , AM3416 , AM3422 , AM3423P .

 

 
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