VBMB1208N - описание и поиск аналогов

 ..1. Size:815K  cn vbsemi
 vbmb1208n.pdf 

VBMB1208N www.VBsemi.com N-Channel 200 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 Definition VDS (V) 200 Surface Mount RDS(on) ( )VGS = 10 V 0.058 Low-Profile Through-Hole Qg (Max.) (nC) 64 Available in Tape and Reel Qgs (nC) 12 Dynamic dV/dt Rating 150 C Operating Temperature Qgd (nC) 30 Fast Switching Conf

 7.1. Size:1953K  cn vbsemi
 vbmb1203m.pdf 

VBMB1203M www.VBsemi.com N-Channel 200 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Isolated Package VDS (V) 200 Available High Voltage Isolation = 2.5 kVRMS (t = 60 s; RDS(on) ( )VGS = 10 V 0.265 f = 60 Hz) RoHS Qg (Max.) (nC) 16 Sink to Lead Creepage Distance = 4.8 mm 175 C Operating Temperature Qgs (nC) 5 Dynamic dV/dt Rating Qgd (nC) 8 Low Thermal Resis

 9.1. Size:800K  cn vbsemi
 vbmb165r20.pdf 

VBMB165R20 www.VBsemi.com N hannel 650 D S Power MOSFET FEATURES PRODUCT SUMMARY Low figure-of-merit (FOM) Ron x Qg VDS (V) 650 Low input capacitance (Ciss) RDS(on) max. at 25 C ( ) VGS = 10 V 0.17 Reduced switching and conduction losses Available Qg max. (nC) 109 Ultra low gate charge (Qg) Qgs (nC) 15 Avalanche energy rated (UIS) Qgd (nC) 31 Configurat

 9.2. Size:932K  cn vbsemi
 vbm165r07 vbmb165r07 vbe165r07 vbfb165r07.pdf 

VBM165R07 / VBMB165R07 VBE165R07 / VBFB165R07 www.VBsemi.com N hannel 650 D S Power MOSFET FEATURES PRODUCT SUMMARY VDS (V) at TJ max. 650 Low figure-of-merit (FOM) Ron x Qg Low input capacitance (Ciss) RDS(on) max. at 25 C ( ) VGS = 10 V 1.1 Reduced switching and conduction losses Qg max. (nC) 25 Ultra low gate charge (Qg) Qgs (nC) 2.0 Avalanche energy r

 9.3. Size:895K  cn vbsemi
 vbm165r20s vbmb165r20s vbp165r20s vbl165r20s.pdf 

VBM165R20S / VBMB165R20S VBP165R20S / VBL165R20S www.VBsemi.com N-Channel 650-V (D-S) Super Junction MOSFET FEATURES PRODUCT SUMMARY Reduced trr, Qrr, and IRRM VDS (V) at TJ max. 650 Low figure-of-merit (FOM) Ron x Qg RDS(on) max. ( ) at 25 C VGS = 10 V 0.19 Low input capacitance (Ciss) Qg max. (nC) 106 Low switching losses due to reduced Qrr Qgs (nC) 14 Ul

 9.4. Size:1786K  cn vbsemi
 vbmb1101m.pdf 

VBMB1101M www.VBsemi.com N-Channel 100-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Isolated Package VDS (V) 100 High Voltage Isolation = 2.5 kVRMS (t = 60 s; RDS(on) ( )VGS = 10 V 0.086 f = 60 Hz) RoHS Sink to Lead Creepage Distance = 4.8 mm Qg (Max.) (nC) 72 COMPLIANT 175 C Operating Temperature Qgs (nC) 11 Dynamic dV/dt Rating Qgd (nC) 32 Low Thermal Re

 9.5. Size:857K  cn vbsemi
 vbmb155r18.pdf 

VBMB155R18 www.VBsemi.com Power MOSFET N-Channel 550V (D-S) FEATURES PRODUCT SUMMARY Optimal Design VDS (V) 550 - Low Area Specific On-Resistance RDS(on) max. at 25 C ( ) VGS = 10 V 0.30 - Low Input Capacitance (Ciss) Qg max. (nC) 150 - Reduced Capacitive Switching Losses Qgs (nC) 12 - High Body Diode Ruggedness Qgd (nC) 25 - Avalanche Energy Rated (UIS) Configuration S

 9.6. Size:943K  cn vbsemi
 vbmb1311.pdf 

VBMB1311 www.VBsemi.com N-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) RDS(on) ( ) ID (A)a, e Qg (Typ) 100 % Rg and UIS Tested Compliant to RoHS Directive 2011/65/EU 0.011 at VGS = 10 V 50 30 70 nC 0.012 at VGS = 4.5 V 49 APPLICATIONS OR-ing Server D TO-220 FULLPAK DC/DC G S S D G N-Channel MOSFET Top

 9.7. Size:478K  cn vbsemi
 vbmb1303.pdf 

VBMB1303 www.VBsemi.com N-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) RDS(on) ( ) ID (A)a, e Qg (Typ) 100 % Rg and UIS Tested Compliant to RoHS Directive 2011/65/EU 0.004 at VGS = 10 V 98 30 82 nC 0.005 at VGS = 4.5 V 98 APPLICATIONS OR-ing TO-220 FULLPAK D Server DC/DC G S S D G N-Channel MOSFET Top Vi

 9.8. Size:1406K  cn vbsemi
 vbm165r10 vbmb165r10 vbl165r10.pdf 

VBM165R10 / VBMB165R10/ VBL165R10 www.VBsemi.com N-Channel 650V (D-S) Power MOSFET FEATURES PRODUCT SUMMARY VDS (V) at TJ max. 670 Low figure-of-merit (FOM) Ron x Qg Available Low input capacitance (Ciss) RoHS RDS(on) max. at 25 C ( ) VGS = 10 V 0.86 43 Reduced switching and conduction losses Qg max. (nC) Ultra low gate charge (Qg) 5 Qgs (nC) Avalanche ener

 9.9. Size:872K  cn vbsemi
 vbmb17r07.pdf 

VBMB17R07 www.VBsemi.com (D-S) Power MOSFET N-Channel 700 V FEATURES PRODUCT SUMMARY Low Gate Charge Qg Results in Simple Drive VDS (V) 700 Requirement RDS(on) max. ( ) at 25 C VGS = 10 V 1.4 Improved Gate, Avalanche and Dynamic dV/dt Qg Typ. (nC) 24 Ruggedness Qgs (nC) 6 Qgd (nC) 11 Fully Characterized Capacitance and Avalanche Voltage Configuration Single an

 9.10. Size:1339K  cn vbsemi
 vbm165r12 vbmb165r12 vbl165r12.pdf 

VBM165R12 / VBMB165R12/ VBL165R12 www.VBsemi.com N-Channel 650V (D-S) Power MOSFET FEATURES PRODUCT SUMMARY VDS (V) at TJ max. 650 Low figure-of-merit (FOM) Ron x Qg Low input capacitance (Ciss) RDS(on) max. at 25 C ( ) VGS = 10 V 0.68 43 Reduced switching and conduction losses Qg max. (nC) Ultra low gate charge (Qg) 5 Qgs (nC) Avalanche energy rated (UIS)

 9.11. Size:844K  cn vbsemi
 vbmb1606.pdf 

VBMB1606 www.VBsemi.com N-Channel 60 V (D-S) MOSFET FEATURES PRODUCT SUMMARY 175 C Junction Temperature VDS (V) RDS(on) ( ) ID (A)a TrenchFET Power MOSFET 0.005 at VGS = 10 V 100 Material categorization 60 0.008 at VGS = 4.5 V 95 TO-220 FULLPAK D G S D G S N-Channel MOSFET Top View ABSOLUTE MAXIMUM RATINGS (TC = 25 C, unless otherwise noted) Parame

 9.12. Size:1284K  cn vbsemi
 vbm165r10 vbmb165r10 vbe165r10 vbfb165r10.pdf 

VBM165R10 / VBMB165R10 VBE165R10 / VBFB165R10 www.VBsemi.com N hannel 650 D S Power MOSFET FEATURES PRODUCT SUMMARY VDS (V) at TJ max. 650 Low figure-of-merit (FOM) Ron x Qg Low input capacitance (Ciss) RDS(on) max. at 25 C ( ) VGS = 10 V 0.9 Reduced switching and conduction losses Qg max. (nC) 57 Ultra low gate charge (Qg) Qgs (nC) 4.0 Avalanche energy

 9.13. Size:1391K  cn vbsemi
 vbmb165r02.pdf 

VBMB165R02 www.VBsemi.com N-Channel 650V (D-S) Power MOSFET FEATURES PRODUCT SUMMARY Low Gate Charge Qg Results in Simple Drive VDS (V) 650 Requirement RoHS RDS(on) ( )VGS = 10 V 4 Improved Gate, Avalanche and Dynamic dV/dt COMPLIANT Qg (Max.) (nC) 11 Ruggedness Qgs (nC) 2.3 Fully Characterized Capacitance and Avalanche Voltage and Current Qgd (nC) 5.2 Complia

 9.14. Size:921K  cn vbsemi
 vbm165r07s vbmb165r07s vbe165r07s vbfb165r07s.pdf 

 9.15. Size:1723K  cn vbsemi
 vbmb1638.pdf 

VBMB1638 www.VBsemi.com N-Channel 60 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Isolated Package VDS (V) 60 High Voltage Isolation = 2.5 kVRMS (t = 60 s; RoHS RDS(on) ( )VGS = 10 V 0.027 f = 60 Hz) COMPLIANT Qg (Max.) (nC) 95 Sink to Lead Creepage Distance = 4.8 mm Qgs (nC) 27 175 C Operating Temperature Qgd (nC) 46 Dynamic dV/dt Rating Configuration Single

 9.16. Size:1249K  cn vbsemi
 vbmb165r04.pdf 

VBMB165R04 www.VBsemi.com Power MOSFET FEATURES PRODUCT SUMMARY Low Gate Charge Qg Results in Simple Drive VDS (V) 650 Available Requirement RDS(on) ( )VGS = 10 V 2.1 RoHS* Improved Gate, Avalanche and Dynamic dV/dt COMPLIANT Qg (Max.) (nC) 48 Ruggedness Qgs (nC) 12 Fully Characterized Capacitance and Avalanche Voltage and Current Qgd (nC) 19 Compliant to Ro

 9.17. Size:751K  cn vbsemi
 vbmb16r08.pdf 

VBMB16R08 www.VBsemi.com Power MOSFET FEATURES PRODUCT SUMMARY Low gate charge Qg results in simple drive VDS (V) 600 Available requirement RDS(on) ( )VGS = 10 V 1.0 Improved gate, avalanche and dynamic dV/dt Available Qg max. (nC) 49 ruggedness Qgs (nC) 13 Fully characterized capacitance and avalanche voltage Qgd (nC) 20 and current Configuration Single APPL

 9.18. Size:741K  cn vbsemi
 vbmb15r13.pdf 

 9.19. Size:765K  cn vbsemi
 vbm16r04 vbmb16r04 vbe16r04 vbfb16r04.pdf 

VBM16R04 / VBMB16R04 VBE16R04 / VBFB16R04 www.VBsemi.com N hannel 600 D S Power MOSFET FEATURES PRODUCT SUMMARY Ultra Low Gate Charge VDS (V) 600 Reduced Gate Drive Requirement Available RDS(on) ( )VGS = 10 V 2.2 Enhanced 30 V, VGS Rating RoHS* Qg (Max.) (nC) 39 COMPLIANT Reduced Ciss, Coss, Crss Qgs (nC) 10 Extremely High Frequency Operation Qgd (nC)

 9.20. Size:1462K  cn vbsemi
 vbm16r02 vbmb16r02 vbe16r02 vbfb16r02.pdf 

VBM16R02 / VBMB16R02 VBE16R02 / VBFB16R02 www.VBsemi.com Power MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) 600 Definition Dynamic dV/dt Rating RDS(on) ( )VGS = 10 V 4.4 Repetitive Avalanche Rated Qg (Max.) (nC) 18 Surface Mount (IRFRC20, SiHFRC20) Qgs (nC) 3.0 Straight Lead (IRFUC20, SiHFUC20) Qgd (nC) 8.9 Available

 9.21. Size:1167K  cn vbsemi
 vbmb165r18.pdf 

VBMB165R18 www.VBsemi.com N-Channel 650 V (D-S) MOSFET PRODUCT SUMMARY FEATURES VDS (V) at TJ max. 650 Reduced trr, Qrr, and IRRM RDS(on) max. ( ) at 25 C VGS = 10 V 0.50 Low figure-of-merit (FOM) Ron x Qg Qg max. (nC) 106 Low input capacitance (Ciss) Qgs (nC) 14 Low switching losses due to reduced Qrr Ultra low gate charge (Qg) Qgd (nC) 33 Avalanche e

 9.22. Size:428K  cn vbsemi
 vbmb1104n.pdf 

VBMB1104N www.VBsemi.com N-Channel 100-V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET V(BR)DSS (V) rDS(on) ( )ID (A) 175 C Junction Temperature RoHS 0.034 at VGS = 10 V 100 50a COMPLIANT Low Thermal Resistance Package 100 % Rg Tested APPLICATIONS Isolated DC/DC Converters D TO-220 FULLPAK G S S D G N-Channel MOSFET ABSOLUTE MAX

 9.23. Size:1490K  cn vbsemi
 vbmb185r05.pdf 

VBMB185R05 www.VBsemi.com N-Channel 8 0V (D-S) Power MOSFET 5 FEATURES PRODUCT SUMMARY Dynamic dV/dt Rating VDS (V) 850 Available Repetitive Avalanche Rated RDS(on) ( )VGS = 10 V 2.0 RoHS Isolated Central Mounting Hole Qg (Max.) (nC) 28 COMPLIANT Fast Switching Qgs (nC) 5 Qgd (nC) Ease of Paralleling 12 Configuration Single Simple Drive Requirements

 9.24. Size:626K  cn vbsemi
 vbmb1615.pdf 

VBMB1615 www.VBsemi.com N-Channel 60-V (D-S) MOSFET FEATURES PRODUCT SUMMARY 175 C Junction Temperature VDS (V) RDS(on) ( ) ID (A)a TrenchFET Power MOSFET 0.010 at VGS = 10 V 60 Material categorization 60 0.012 at VGS = 4.5 V 50 TO-220 FULLPAK D G S D S G Top View N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TC = 25 C, unless otherwise noted) Parame

 9.25. Size:770K  cn vbsemi
 vbm18r15s vbmb18r15s vbp18r15s.pdf 

VBM18R15S / VBMB18R15S / VBP18R15S www.VBsemi.com N-Channel 800V (D-S) Super Junction Power MOSFET FEATURES PRODUCT SUMMARY Low figure-of-merit (FOM) Ron x Qg VDS (V) at TJ max. 800 Available Low input capacitance (Ciss) RDS(on) max. at 25 C ( ) VGS = 10 V 0.38 Reduced switching and conduction losses Available Qg max. (nC) 96 Ultra low gate charge (Qg) Qgs (nC)