VBMB1311www.VBsemi.comN-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) ()ID (A)a, e Qg (Typ) 100 % Rg and UIS Tested Compliant to RoHS Directive 2011/65/EU0.011 at VGS = 10 V 5030 70 nC0.012 at VGS = 4.5 V 49APPLICATIONS OR-ing ServerDTO-220 FULLPAK DC/DCGSSDGN-Channel MOSFETTop

VBMB1303www.VBsemi.comN-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) ()ID (A)a, e Qg (Typ) 100 % Rg and UIS Tested Compliant to RoHS Directive 2011/65/EU0.004 at VGS = 10 V 9830 82 nC0.005 at VGS = 4.5 V 98APPLICATIONS OR-ingTO-220 FULLPAK D Server DC/DCGSSDGN-Channel MOSFETTop Vi

VBMB165R20www.VBsemi.comN hannel 650 D S Power MOSFETFEATURESPRODUCT SUMMARY Low figure-of-merit (FOM) Ron x QgVDS (V) 650 Low input capacitance (Ciss)RDS(on) max. at 25 C () VGS = 10 V 0.17 Reduced switching and conduction lossesAvailableQg max. (nC) 109 Ultra low gate charge (Qg)Qgs (nC) 15 Avalanche energy rated (UIS)Qgd (nC) 31Configurat

VBM165R07 / VBMB165R07VBE165R07 / VBFB165R07www.VBsemi.comN hannel 650 D S Power MOSFETFEATURESPRODUCT SUMMARYVDS (V) at TJ max. 650 Low figure-of-merit (FOM) Ron x Qg Low input capacitance (Ciss)RDS(on) max. at 25 C () VGS = 10 V 1.1 Reduced switching and conduction lossesQg max. (nC) 25 Ultra low gate charge (Qg)Qgs (nC) 2.0 Avalanche energy r

VBM165R20S / VBMB165R20SVBP165R20S / VBL165R20Swww.VBsemi.comN-Channel 650-V (D-S) Super Junction MOSFETFEATURESPRODUCT SUMMARY Reduced trr, Qrr, and IRRMVDS (V) at TJ max. 650 Low figure-of-merit (FOM) Ron x QgRDS(on) max. () at 25 C VGS = 10 V 0.19 Low input capacitance (Ciss)Qg max. (nC) 106 Low switching losses due to reduced QrrQgs (nC) 14 Ul

VBMB1101Mwww.VBsemi.comN-Channel 100-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Isolated PackageVDS (V) 100 High Voltage Isolation = 2.5 kVRMS (t = 60 s;RDS(on) ()VGS = 10 V 0.086 f = 60 Hz)RoHS Sink to Lead Creepage Distance = 4.8 mmQg (Max.) (nC) 72COMPLIANT 175 C Operating TemperatureQgs (nC) 11 Dynamic dV/dt RatingQgd (nC) 32 Low Thermal Re

VBMB155R18www.VBsemi.comPower MOSFETN-Channel 550V (D-S)FEATURESPRODUCT SUMMARY Optimal DesignVDS (V) 550- Low Area Specific On-ResistanceRDS(on) max. at 25 C () VGS = 10 V 0.30- Low Input Capacitance (Ciss)Qg max. (nC) 150- Reduced Capacitive Switching LossesQgs (nC) 12- High Body Diode RuggednessQgd (nC) 25- Avalanche Energy Rated (UIS)Configuration S

VBM165R10 / VBMB165R10/ VBL165R10www.VBsemi.comN-Channel 650V (D-S) Power MOSFETFEATURESPRODUCT SUMMARYVDS (V) at TJ max. 670 Low figure-of-merit (FOM) Ron x Qg Available Low input capacitance (Ciss) RoHSRDS(on) max. at 25 C () VGS = 10 V 0.8643 Reduced switching and conduction lossesQg max. (nC) Ultra low gate charge (Qg)5Qgs (nC) Avalanche ener

VBMB17R07www.VBsemi.com(D-S) Power MOSFET N-Channel 700 V FEATURESPRODUCT SUMMARY Low Gate Charge Qg Results in Simple DriveVDS (V) 700RequirementRDS(on) max. () at 25 C VGS = 10 V 1.4 Improved Gate, Avalanche and Dynamic dV/dtQg Typ. (nC) 24RuggednessQgs (nC) 6Qgd (nC) 11 Fully Characterized Capacitance and Avalanche VoltageConfiguration Singlean

VBM165R12 / VBMB165R12/ VBL165R12www.VBsemi.comN-Channel 650V (D-S) Power MOSFETFEATURESPRODUCT SUMMARYVDS (V) at TJ max. 650 Low figure-of-merit (FOM) Ron x Qg Low input capacitance (Ciss)RDS(on) max. at 25 C () VGS = 10 V 0.6843 Reduced switching and conduction lossesQg max. (nC) Ultra low gate charge (Qg)5Qgs (nC) Avalanche energy rated (UIS)

VBMB1606www.VBsemi.comN-Channel 60 V (D-S) MOSFETFEATURESPRODUCT SUMMARY 175 C Junction TemperatureVDS (V) RDS(on) ()ID (A)a TrenchFET Power MOSFET0.005 at VGS = 10 V 100 Material categorization:600.008 at VGS = 4.5 V 95TO-220 FULLPAKDGSDGSN-Channel MOSFETTop ViewABSOLUTE MAXIMUM RATINGS (TC = 25 C, unless otherwise noted)Parame

VBM165R10 / VBMB165R10VBE165R10 / VBFB165R10www.VBsemi.comN hannel 650 D S Power MOSFETFEATURESPRODUCT SUMMARYVDS (V) at TJ max. 650 Low figure-of-merit (FOM) Ron x Qg Low input capacitance (Ciss)RDS(on) max. at 25 C () VGS = 10 V 0.9 Reduced switching and conduction lossesQg max. (nC)57 Ultra low gate charge (Qg)Qgs (nC)4.0 Avalanche energy

VBMB1203Mwww.VBsemi.comN-Channel 200 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Isolated PackageVDS (V) 200Available High Voltage Isolation = 2.5 kVRMS (t = 60 s;RDS(on) ()VGS = 10 V 0.265f = 60 Hz) RoHSQg (Max.) (nC) 16 Sink to Lead Creepage Distance = 4.8 mm 175 C Operating TemperatureQgs (nC) 5 Dynamic dV/dt RatingQgd (nC) 8 Low Thermal Resis

VBMB165R02www.VBsemi.comN-Channel 650V (D-S) Power MOSFETFEATURESPRODUCT SUMMARY Low Gate Charge Qg Results in Simple DriveVDS (V) 650RequirementRoHSRDS(on) ()VGS = 10 V 4 Improved Gate, Avalanche and Dynamic dV/dtCOMPLIANTQg (Max.) (nC) 11RuggednessQgs (nC) 2.3 Fully Characterized Capacitance and Avalanche Voltageand CurrentQgd (nC) 5.2 Complia

VBM165R07S / VBMB165R07SVBE165R07S / VBFB165R07Swww.VBsemi.comN hannel 650 D S Super Junc n Power MOSFETFEATURESPRODUCT SUMMARYVDS (V) at TJ max. 650 Low figure-of-merit (FOM) Ron x Qg Low input capacitance (Ciss)RDS(on) max. at 25 C () VGS = 10 V 0.7 Reduced switching and conduction lossesQg max. (nC) 25 Ultra low gate charge (Qg)Qgs (nC) 2.0

VBMB1638www.VBsemi.comN-Channel 60 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Isolated PackageVDS (V) 60 High Voltage Isolation = 2.5 kVRMS (t = 60 s;RoHSRDS(on) ()VGS = 10 V 0.027f = 60 Hz) COMPLIANTQg (Max.) (nC) 95 Sink to Lead Creepage Distance = 4.8 mmQgs (nC) 27 175 C Operating TemperatureQgd (nC) 46 Dynamic dV/dt RatingConfiguration Single

VBMB165R04 www.VBsemi.comPower MOSFETFEATURESPRODUCT SUMMARY Low Gate Charge Qg Results in Simple DriveVDS (V) 650AvailableRequirementRDS(on) ()VGS = 10 V 2.1RoHS* Improved Gate, Avalanche and Dynamic dV/dtCOMPLIANTQg (Max.) (nC) 48RuggednessQgs (nC) 12 Fully Characterized Capacitance and Avalanche Voltageand CurrentQgd (nC) 19 Compliant to Ro

VBMB16R08www.VBsemi.comPower MOSFETFEATURESPRODUCT SUMMARY Low gate charge Qg results in simple drive VDS (V) 600AvailablerequirementRDS(on) ()VGS = 10 V 1.0 Improved gate, avalanche and dynamic dV/dt AvailableQg max. (nC) 49ruggednessQgs (nC) 13 Fully characterized capacitance and avalanche voltage Qgd (nC) 20and currentConfiguration SingleAPPL

VBMB15R13www.VBsemi.comPower MOSFETN-Channel 500V (D-S)FEATURESPRODUCT SUMMARY Lower Gate Charge Qg Results in Simpler DriveVDS (V) 500ReqirementsRDS(on) ()VGS = 10 V 0.660Available Improved Gate, Avalanche and Dynamic dV/dtQg (Max.) (nC) 75Ruggedness Qgs (nC) 18Qgd (nC) 34 Fully Characterized Capacitance and Avalanche VoltageConfiguration Single

VBM16R04 / VBMB16R04VBE16R04 / VBFB16R04www.VBsemi.comN hannel 600 D S Power MOSFETFEATURESPRODUCT SUMMARY Ultra Low Gate ChargeVDS (V) 600 Reduced Gate Drive RequirementAvailableRDS(on) ()VGS = 10 V 2.2 Enhanced 30 V, VGS RatingRoHS*Qg (Max.) (nC) 39 COMPLIANT Reduced Ciss, Coss, CrssQgs (nC) 10 Extremely High Frequency OperationQgd (nC)

VBM16R02 / VBMB16R02VBE16R02 / VBFB16R02www.VBsemi.comPower MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) 600Definition Dynamic dV/dt RatingRDS(on) ()VGS = 10 V 4.4 Repetitive Avalanche RatedQg (Max.) (nC) 18 Surface Mount (IRFRC20, SiHFRC20)Qgs (nC) 3.0 Straight Lead (IRFUC20, SiHFUC20)Qgd (nC) 8.9 Available

VBMB165R18www.VBsemi.comN-Channel 650 V (D-S) MOSFETPRODUCT SUMMARYFEATURESVDS (V) at TJ max. 650 Reduced trr, Qrr, and IRRMRDS(on) max. () at 25 C VGS = 10 V 0.50 Low figure-of-merit (FOM) Ron x QgQg max. (nC) 106 Low input capacitance (Ciss)Qgs (nC) 14 Low switching losses due to reduced Qrr Ultra low gate charge (Qg)Qgd (nC) 33 Avalanche e

VBMB1104Nwww.VBsemi.comN-Channel 100-V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETV(BR)DSS (V) rDS(on) ()ID (A) 175 C Junction TemperatureRoHS0.034 at VGS = 10 V10050aCOMPLIANT Low Thermal Resistance Package 100 % Rg TestedAPPLICATIONS Isolated DC/DC ConvertersDTO-220 FULLPAKGSSDGN-Channel MOSFETABSOLUTE MAX

VBMB185R05www.VBsemi.comN-Channel 8 0V (D-S) Power MOSFET5FEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) 850Available Repetitive Avalanche RatedRDS(on) ()VGS = 10 V 2.0RoHS Isolated Central Mounting HoleQg (Max.) (nC) 28 COMPLIANT Fast SwitchingQgs (nC) 5Qgd (nC) Ease of Paralleling12Configuration Single Simple Drive Requirements

VBMB1615www.VBsemi.comN-Channel 60-V (D-S) MOSFETFEATURESPRODUCT SUMMARY 175 C Junction TemperatureVDS (V) RDS(on) ()ID (A)a TrenchFET Power MOSFET0.010 at VGS = 10 V 60 Material categorization:600.012 at VGS = 4.5 V 50TO-220 FULLPAKDGSD SGTop ViewN-Channel MOSFETABSOLUTE MAXIMUM RATINGS (TC = 25 C, unless otherwise noted)Parame

VBM18R15S / VBMB18R15S / VBP18R15Swww.VBsemi.comN-Channel 800V (D-S) Super Junction Power MOSFETFEATURESPRODUCT SUMMARY Low figure-of-merit (FOM) Ron x QgVDS (V) at TJ max. 800Available Low input capacitance (Ciss)RDS(on) max. at 25 C () VGS = 10 V 0.38 Reduced switching and conduction lossesAvailableQg max. (nC) 96 Ultra low gate charge (Qg)Qgs (nC)

VBMB1208Nwww.VBsemi.comN-Channel 200 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21DefinitionVDS (V) 200 Surface MountRDS(on) ()VGS = 10 V 0.058 Low-Profile Through-HoleQg (Max.) (nC) 64 Available in Tape and ReelQgs (nC) 12 Dynamic dV/dt Rating 150 C Operating TemperatureQgd (nC) 30 Fast SwitchingConf