VBQA1102N - описание и поиск аналогов

 ..1. Size:1042K  cn vbsemi
 vbqa1102n.pdf 

VBQA1102N www.VBsemi.com N-Channel 100-V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET V(BR)DSS (V) rDS(on) ( )ID (A) 175 C Junction Temperature RoHS 0.017 at VGS = 10 V 100 30 COMPLIANT Low Thermal Resistance Package 100 % Rg Tested APPLICATIONS Isolated DC/DC Converters D DFN5X6 Top View Top View Bottom View 1 8 2 7 G 3 6 4

 9.1. Size:947K  cn vbsemi
 vbqa1308.pdf 

VBQA1308 www.VBsemi.com N-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) RDS(on) ( ) ID (A)a, e Qg (Typ) 100 % Rg and UIS Tested Compliant to RoHS Directive 2011/65/EU 0.007 at VGS = 10 V 60 30 31 nC 0.009 at VGS = 4.5 V 48 APPLICATIONS OR-ing DFN5X6 Single D D Server D 8 DC/DC D 7 D 6 5 G 1 2 S S 3 S

 9.2. Size:935K  cn vbsemi
 vbqa1402.pdf 

VBQA1402 www.VBsemi.com N-Channel 40-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A)a Qg (Typ.) Definition 0.0025 at VGS = 10 V 120 TrenchFET Power MOSFET 40 38 nC 0.0028 at VGS = 6.5 V 105 100 % Rg Tested 100 % UIS Tested APPLICATIONS Synchronous Rectification Secondary Side DC/DC

 9.3. Size:476K  cn vbsemi
 vbqa1302.pdf 

VBQA1302 www.VBsemi.com N-Channel 30 V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) RDS(on) ( ) ID (A)a, e Qg (Typ.) 100 % Rg and UIS Tested 0.0018 at VGS = 10 V 100 APPLICATIONS 30 82 nC 0.0025 at VGS = 4.5 V 90 OR-ing Server D DFN5X6 Top View Top View Bottom View 1 8 2 7 3 6 G 4 5 PIN1 S N-Channel MOSFET ABSOLUTE MA

 9.4. Size:523K  cn vbsemi
 vbqa1303.pdf 

VBQA1303 www.VBsemi.com N-Channel 30 V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) RDS(on) ( ) ID (A)a, e Qg (Typ.) 100 % Rg and UIS Tested 0.003 at VGS = 10 V 80 APPLICATIONS 30 71 nC 0.005 at VGS = 4.5 V 70 Notebook PC Core VRM/POL D DFN5X6 Top View Top View Bottom View 1 8 2 7 3 6 G 4 5 PIN1 S N-Channel MOSFET ABS

 9.5. Size:540K  cn vbsemi
 vbqa1405.pdf 

VBQA1405 www.VBsemi.com N-Channel 40 V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) RDS(on) ( ) ID (A)a, e Qg (Typ.) 100 % Rg and UIS Tested 0.0050 at VGS = 10 V 70 APPLICATIONS 40 67 nC 0.0060 at VGS = 4.5 V 65 Notebook PC Core VRM/POL D DFN5X6 Top View Top View Bottom View 1 8 2 7 3 6 G 4 5 PIN1 S N-Channel MOSFET A

 9.6. Size:517K  cn vbsemi
 vbqa1606.pdf 

VBQA1606 www.VBsemi.com N-Channel 60 V (D-S) MOSFET FEATURES PRODUCT SUMMARY 175 C Junction Temperature VDS (V) RDS(on) ( ) ID (A)a TrenchFET Power MOSFET 0.006 at VGS = 10 V 80 Material categorization 60 0.007 at VGS = 4.5 V 65 D DFN5X6 Top View Top View Bottom View 1 8 2 7 G 3 6 4 5 PIN1 S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TC = 25

 9.7. Size:878K  cn vbsemi
 vbqa1638.pdf 

VBQA1638 www.VBsemi.com N-Channel 60-V (D-S) MOSFET FEATURES Halogen-free According to IEC 61249-2-21 PRODUCT SUMMARY Available VDS (V) 60 TrenchFET Power MOSFET RDS(on) max. ( ) at VGS = 10 V 0.024 100 % Rg Tested RDS(on) max. ( ) at VGS = 4.5 V 0.028 100 % UIS Tested Qg typ. (nC) 5.2 ID (A) 15a, g APPLICATIONS Configuration Single Battery Switch