VBQA1303 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: VBQA1303
Тип транзистора: MOSFET
Полярность: N
Pdⓘ - Максимальная рассеиваемая мощность: 3.35 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 30 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
|Vgs(th)|ⓘ - Пороговое напряжение включения: 2.5 V
|Id|ⓘ - Максимально допустимый постоянный ток стока: 21 A
Tjⓘ - Максимальная температура канала: 175 °C
Qgⓘ - Общий заряд затвора: 71 nC
trⓘ - Время нарастания: 11 ns
Cossⓘ - Выходная емкость: 1025 pf
Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.003(typ) Ohm
Тип корпуса: DFN5X6
VBQA1303 Datasheet (PDF)
vbqa1303.pdf
VBQA1303www.VBsemi.comN-Channel 30 V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) ()ID (A)a, e Qg (Typ.) 100 % Rg and UIS Tested0.003 at VGS = 10 V 80APPLICATIONS30 71 nC0.005 at VGS = 4.5 V 70 Notebook PC Core VRM/POLDDFN5X6Top ViewTop View Bottom View182736 G45PIN1SN-Channel MOSFETABS
vbqa1308.pdf
VBQA1308www.VBsemi.comN-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) ()ID (A)a, e Qg (Typ) 100 % Rg and UIS Tested Compliant to RoHS Directive 2011/65/EU0.007 at VGS = 10 V 6030 31 nC0.009 at VGS = 4.5 V 48APPLICATIONS OR-ingDFN5X6 Single DD ServerD 8 DC/DCD 7D 65G12 SS3 S
vbqa1302.pdf
VBQA1302www.VBsemi.comN-Channel 30 V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) ()ID (A)a, e Qg (Typ.) 100 % Rg and UIS Tested0.0018 at VGS = 10 V 100APPLICATIONS30 82 nC0.0025 at VGS = 4.5 V 90 OR-ing ServerDDFN5X6Top ViewTop View Bottom View182736 G45PIN1SN-Channel MOSFETABSOLUTE MA
vbqa1102n.pdf
VBQA1102Nwww.VBsemi.comN-Channel 100-V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETV(BR)DSS (V) rDS(on) ()ID (A) 175 C Junction TemperatureRoHS0.017 at VGS = 10 V10030COMPLIANT Low Thermal Resistance Package 100 % Rg TestedAPPLICATIONS Isolated DC/DC ConvertersDDFN5X6Top ViewTop View Bottom View1827G364
vbqa1402.pdf
VBQA1402www.VBsemi.comN-Channel 40-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)a Qg (Typ.)Definition0.0025 at VGS = 10 V 120 TrenchFET Power MOSFET40 38 nC0.0028 at VGS = 6.5 V 105 100 % Rg Tested 100 % UIS TestedAPPLICATIONS Synchronous Rectification Secondary Side DC/DC
vbqa1405.pdf
VBQA1405www.VBsemi.comN-Channel 40 V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) ()ID (A)a, e Qg (Typ.) 100 % Rg and UIS Tested0.0050 at VGS = 10 V 70APPLICATIONS40 67 nC0.0060 at VGS = 4.5 V 65 Notebook PC Core VRM/POLDDFN5X6Top ViewTop View Bottom View182736 G45PIN1SN-Channel MOSFETA
vbqa1606.pdf
VBQA1606www.VBsemi.comN-Channel 60 V (D-S) MOSFETFEATURESPRODUCT SUMMARY 175 C Junction TemperatureVDS (V) RDS(on) ()ID (A)a TrenchFET Power MOSFET0.006 at VGS = 10 V 80 Material categorization:600.007 at VGS = 4.5 V 65DDFN5X6Top ViewTop View Bottom View1827G3645PIN1SN-Channel MOSFETABSOLUTE MAXIMUM RATINGS (TC = 25
vbqa1638.pdf
VBQA1638www.VBsemi.comN-Channel 60-V (D-S) MOSFETFEATURES Halogen-free According to IEC 61249-2-21PRODUCT SUMMARYAvailableVDS (V) 60 TrenchFET Power MOSFETRDS(on) max. () at VGS = 10 V 0.024 100 % Rg TestedRDS(on) max. () at VGS = 4.5 V 0.028 100 % UIS TestedQg typ. (nC) 5.2ID (A) 15a, gAPPLICATIONSConfiguration Single Battery Switch
Другие MOSFET... WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , IRF1407 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .
Список транзисторов
Обновления
MOSFET: DAMIA1100N100 | DAMI660N60 | DAMI560N100 | DAMI500N60 | DAMI450N100 | DAMI360N150 | DAMI330N60 | DAMI320N100 | DAMI300N150 | DAMI280N200 | DAMI220N200 | DAMI220N150 | DAMI160N200 | DAMI160N100 | DAMH75N500H | DAMH560N100