VBZA4618
Даташит. Основные параметры и характеристики. Поиск аналогов
Наименование прибора: VBZA4618
Тип транзистора: MOSFET
Полярность: NP
Pdⓘ - Максимальная рассеиваемая мощность: 3
W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 40
V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20
V
|Id|ⓘ - Максимально
допустимый постоянный ток стока: 6
A
Tjⓘ - Максимальная температура канала: 150
°C
trⓘ -
Время нарастания: 10
ns
Cossⓘ - Выходная емкость: 745
pf
Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.015(typ)
Ohm
Тип корпуса:
SO8
- подбор MOSFET транзистора по параметрам
VBZA4618
Datasheet (PDF)
..1. Size:2245K cn vbsemi
vbza4618.pdf 
VBZA4618www.VBsemi.comN- and P-Channel 40V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) () DefinitionTyp. ID (A)a Qg (Typ.) TrenchFET Power MOSFET0.015 at VGS = 10 V 9.0 100 % Rg and UIS TestedN-Channel 40 13 Compliant to RoHS Directive 2002/95/EC0.018 at VGS = 4.5 V 7.6APPLICATIONS0.017 at VGS = -
7.1. Size:2621K cn vbsemi
vbza4611.pdf 
VBZA4611www.VBsemi.comN- and P-Channe 60V (D-S) MOSFET-FEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) () DefinitionTyp. ID (A)a Qg (Typ.) TrenchFET Power MOSFET0.012 at VGS = 10 V 9.0 100 % Rg and UIS TestedN-Channel6013 Compliant to RoHS Directive 2002/95/EC0.016 at VGS = 4.5 V 8.0APPLICATIONS0.041 at VGS
8.1. Size:2360K cn vbsemi
vbza4606.pdf 
VBZA4606www.VBsemi.comN- and P-Channel 30 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) () DefinitionID (A)a Qg (Typ.) TrenchFET Power MOSFET0.015 at VGS = 10 V 9 100 % Rg and UIS TestedN-Channel 30 13 Compliant to RoHS Directive 2002/95/EC0.020 at VGS = 4.5 V 8APPLICATIONS0.021 at VGS = - 10 V - 8
9.1. Size:1231K cn vbsemi
vbza4936.pdf 
VBZA4936www.VBsemi.comDual N-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A) Qg (Typ.)Definition0.015 at VGS = 10 V TrenchFET Power MOSFET1030 15 nC 100 % UIS Tested0.019 at VGS = 4.5 V 8 100 % Rg Tested Compliant to RoHS Directive 2002/95/ECAPPLICATIONS Set Top Box
9.2. Size:890K cn vbsemi
vbza4430.pdf 
VBZA4430www.VBsemi.comN-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-freeVDS (V) RDS(on) ()ID (A)a Qg (Typ.) TrenchFET Power MOSFET0.005at VGS = 10 V 1830 6.8 nC Optimized for High-Side Synchronous0.006 at VGS = 4.5 V 16Rectifier Operation 100 % Rg Tested 100 % UIS TestedAPPLICATIONS Notebook CPU Core- High-Side SwitchS
9.3. Size:492K cn vbsemi
vbza4435.pdf 
VBZA4435www.VBsemi.comP-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)d Qg (Typ.)Definition0.018 at VGS = - 10 V - 9.0 TrenchFET Power MOSFET- 30 13 nC 100 % Rg Tested0.024 at VGS = - 4.5 V - 7.8APPLICATIONS Load Switch Battery SwitchS SO-8S1 8 DG S D2 7S3 6 D
9.4. Size:1227K cn vbsemi
vbza4805.pdf 
VBZA4805www.VBsemi.comDual P-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-freeVDS (V) RDS(on) ()ID (A)d, e Qg (Typ.) TrenchFET Power MOSFET0.035 at VGS = - 10 V - 7 100 % UIS TestedRoHS- 30 15 nCCOMPLIANT0.048 at VGS = - 4.5 V - 5APPLICATIONS Load Switches- Notebook PCs- Desktop PCsSO-8S1 S2- Game StationsS1 1 D18G1 2
9.5. Size:1798K cn vbsemi
vbza4850.pdf 
VBZA4850www.VBsemi.comN-Channel 60-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)d Qg (Typ.)Definition TrenchFET Power MOSFET0.027 at VGS = 10 V 860 10.5 nC Optimized for Low Side Synchronous50.040 at VGS = 4.5 V Rectifier Operation 100 % Rg and UIS TestedAPPLICATIONSD CCFL In
9.6. Size:1128K cn vbsemi
vbza4425.pdf 
VBZA4425www.VBsemi.comP-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-freeVDS (V) RDS(on) ()ID (A)d Qg (Typ.) TrenchFET Power MOSFET0.023at VGS = - 10 V - 7 100 % Rg TestedRoHS- 30 28 nCCOMPLIANT 100 % UIS Tested0.030 at VGS = - 4.5 V -5APPLICATIONS Load Switch Notebook Adaptor SwitchSO-8 S S1 8 DS D2 7G S3 6 D
9.7. Size:1322K cn vbsemi
vbza4800.pdf 
VBZA4800www.VBsemi.comN-Channel 20V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-freeVDS (V) RDS(on) ()ID (A)a Qg (Typ.) TrenchFET Power MOSFET0.09 at VGS = 10 V 1420 6.1 nC Optimized for High-Side Synchronous0.015 at VGS = 4.5 V 9Rectifier Operation 100 % Rg Tested 100 % UIS TestedAPPLICATIONS Notebook CPU Core- High-Side SwitchSO-
9.8. Size:1229K cn vbsemi
vbza4410.pdf 
VBZA4410www.VBsemi.comN-Channel 20V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-freeVDS (V) RDS(on) ()ID (A)a Qg (Typ.) TrenchFET Power MOSFET0.011 at VGS = 10 V 1120 6.1 nC Optimized for High-Side Synchronous0.015 at VGS = 4.5 V 9Rectifier Operation 100 % Rg Tested 100 % UIS TestedAPPLICATIONS Notebook CPU Core- High-Side SwitchSO
9.9. Size:1060K cn vbsemi
vbza4409.pdf 
VBZA4409www.VBsemi.comP-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-freeVDS (V) RDS(on) ()ID (A)d Qg (Typ.) TrenchFET Power MOSFET0.011at VGS = - 10 V - 11 100 % Rg TestedRoHS- 30 15 nCCOMPLIANT 100 % UIS Tested0.015 at VGS = - 4.5 V - 9APPLICATIONS Load Switch Notebook Adaptor SwitchSO-8 S S1 8 DS D2 7G S3 6
9.10. Size:1679K cn vbsemi
vbza4953a.pdf 
VBZA4953Awww.VBsemi.comDual P-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-freeVDS (V) RDS(on) ()ID (A)d, e Qg (Typ.) TrenchFET Power MOSFET0.040 at VGS = - 10 V - 6 100 % UIS TestedRoHS- 30 15 nCCOMPLIANT0.048 at VGS = - 4.5 V - 5APPLICATIONS Load Switches- Notebook PCs- Desktop PCsSO-8S1 S2- Game StationsS1 1 D18G1 2
9.11. Size:1775K cn vbsemi
vbza4946.pdf 
VBZA4946www.VBsemi.comDual N-Channel 60 V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET power MOSFETVDS (V) 60 100 % Rg and UIS testedRDS(on) () at VGS = 10 V 0.032RDS(on) () at VGS = 4.5 V 0.040ID (A) per leg6Configuration DualSO-8 DualD2D1 D2D2 5D16D178G1 G24G233S1S2S2 S222GG111N-Channel MOSFET N-Channel M
9.12. Size:480K cn vbsemi
vbza4953.pdf 
VBZA4953www.VBsemi.comDual P-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-freeVDS (V) RDS(on) ()ID (A)d, e Qg (Typ.) TrenchFET Power MOSFET0.029 at VGS = - 10 V - 7.3 100 % UIS TestedRoHS- 30 17 nCCOMPLIANT0.039 at VGS = - 4.5 V - 6.3APPLICATIONS Load SwitchesS1 S2SO-8S1 1 D18G1 G2G1 2 D17S2 3 D26G2 4 D25Top Vi
9.13. Size:1442K cn vbsemi
vbza4420.pdf 
VBZA4420www.VBsemi.comP-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-freeVDS (V) RDS(on) ()ID (A)d Qg (Typ.) TrenchFET Power MOSFET0.013at VGS = - 10 V - 10 100 % Rg TestedRoHS- 30 18 nCCOMPLIANT 100 % UIS Tested0.015 at VGS = - 4.5 V - 9APPLICATIONS Load Switch Notebook Adaptor SwitchSO-8 S S1 8 DS D2 7G S3 6
9.14. Size:1461K cn vbsemi
vbza4412.pdf 
VBZA4412www.VBsemi.comN-Channel 20V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-freeVDS (V) RDS(on) ()ID (A)a Qg (Typ.) TrenchFET Power MOSFET0.010 at VGS = 10 V 1320 6.1 nC Optimized for High-Side Synchronous0.015 at VGS = 4.5 V 9Rectifier Operation 100 % Rg Tested 100 % UIS TestedAPPLICATIONS Notebook CPU Core- High-Side SwitchSO
9.15. Size:443K cn vbsemi
vbza4407.pdf 
VBZA4407www.VBsemi.comP-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)d Qg (Typ.)Available0.0125 at VGS = - 10 V - 11.6 TrenchFET Power MOSFET- 30 22 nC 100 % Rg Tested0.018 at VGS = - 4.5 V - 10 100 % UIS TestedAPPLICATIONS Load SwitchesS - Notebook PCsSO-8- Desktop PCs
9.16. Size:1100K cn vbsemi
vbza4042.pdf 
VBZA4042www.VBsemi.comN-Channel 40-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)a Qg (Typ.) TrenchFET Power MOSFET0.006 at VGS = 10 V 13 100 % Rg and UIS Tested40 8 nC0.009 at VGS = 4.5 V 11APPLICATIONS Notebook CPU Core- High-Side SwitchD SO-8 SD1 8 G SD2 7 SD3 6 GD4
Другие MOSFET... FQT7N10L
, FDP083N15A
, FQU10N20C
, FDP075N15A
, FQU11P06
, FQU12N20
, FDPF085N10A
, FQU13N06L
, IRFZ44
, FDB86102LZ
, FQU17P06
, FQU1N60C
, FDP085N10A
, FQU20N06L
, FQU2N100
, FQU2N60C
, FDMC8030
.
History: STB200NF04L
| KF2N60L
| IAUC100N10S5N040
| STU601S
| EKI07174
| SE8810
| TSF10N60M
