VBZA4800 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: VBZA4800
Тип транзистора: MOSFET
Полярность: N
Pdⓘ - Максимальная рассеиваемая мощность: 2.2 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 20 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 16 V
|Vgs(th)|ⓘ - Пороговое напряжение включения: 3 V
|Id|ⓘ - Максимально допустимый постоянный ток стока: 10 A
Tjⓘ - Максимальная температура канала: 150 °C
Qgⓘ - Общий заряд затвора: 9(max) nC
trⓘ - Время нарастания: 12 ns
Cossⓘ - Выходная емкость: 165 pf
Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.009(typ) Ohm
Тип корпуса: SO8
VBZA4800 Datasheet (PDF)
vbza4800.pdf
VBZA4800www.VBsemi.comN-Channel 20V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-freeVDS (V) RDS(on) ()ID (A)a Qg (Typ.) TrenchFET Power MOSFET0.09 at VGS = 10 V 1420 6.1 nC Optimized for High-Side Synchronous0.015 at VGS = 4.5 V 9Rectifier Operation 100 % Rg Tested 100 % UIS TestedAPPLICATIONS Notebook CPU Core- High-Side SwitchSO-
vbza4805.pdf
VBZA4805www.VBsemi.comDual P-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-freeVDS (V) RDS(on) ()ID (A)d, e Qg (Typ.) TrenchFET Power MOSFET0.035 at VGS = - 10 V - 7 100 % UIS TestedRoHS- 30 15 nCCOMPLIANT0.048 at VGS = - 4.5 V - 5APPLICATIONS Load Switches- Notebook PCs- Desktop PCsSO-8S1 S2- Game StationsS1 1 D18G1 2
vbza4850.pdf
VBZA4850www.VBsemi.comN-Channel 60-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)d Qg (Typ.)Definition TrenchFET Power MOSFET0.027 at VGS = 10 V 860 10.5 nC Optimized for Low Side Synchronous50.040 at VGS = 4.5 V Rectifier Operation 100 % Rg and UIS TestedAPPLICATIONSD CCFL In
vbza4936.pdf
VBZA4936www.VBsemi.comDual N-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A) Qg (Typ.)Definition0.015 at VGS = 10 V TrenchFET Power MOSFET1030 15 nC 100 % UIS Tested0.019 at VGS = 4.5 V 8 100 % Rg Tested Compliant to RoHS Directive 2002/95/ECAPPLICATIONS Set Top Box
vbza4430.pdf
VBZA4430www.VBsemi.comN-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-freeVDS (V) RDS(on) ()ID (A)a Qg (Typ.) TrenchFET Power MOSFET0.005at VGS = 10 V 1830 6.8 nC Optimized for High-Side Synchronous0.006 at VGS = 4.5 V 16Rectifier Operation 100 % Rg Tested 100 % UIS TestedAPPLICATIONS Notebook CPU Core- High-Side SwitchS
vbza4435.pdf
VBZA4435www.VBsemi.comP-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)d Qg (Typ.)Definition0.018 at VGS = - 10 V - 9.0 TrenchFET Power MOSFET- 30 13 nC 100 % Rg Tested0.024 at VGS = - 4.5 V - 7.8APPLICATIONS Load Switch Battery SwitchS SO-8S1 8 DG S D2 7S3 6 D
vbza4606.pdf
VBZA4606www.VBsemi.comN- and P-Channel 30 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) () DefinitionID (A)a Qg (Typ.) TrenchFET Power MOSFET0.015 at VGS = 10 V 9 100 % Rg and UIS TestedN-Channel 30 13 Compliant to RoHS Directive 2002/95/EC0.020 at VGS = 4.5 V 8APPLICATIONS0.021 at VGS = - 10 V - 8
vbza4425.pdf
VBZA4425www.VBsemi.comP-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-freeVDS (V) RDS(on) ()ID (A)d Qg (Typ.) TrenchFET Power MOSFET0.023at VGS = - 10 V - 7 100 % Rg TestedRoHS- 30 28 nCCOMPLIANT 100 % UIS Tested0.030 at VGS = - 4.5 V -5APPLICATIONS Load Switch Notebook Adaptor SwitchSO-8 S S1 8 DS D2 7G S3 6 D
vbza4618.pdf
VBZA4618www.VBsemi.comN- and P-Channel 40V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) () DefinitionTyp. ID (A)a Qg (Typ.) TrenchFET Power MOSFET0.015 at VGS = 10 V 9.0 100 % Rg and UIS TestedN-Channel 40 13 Compliant to RoHS Directive 2002/95/EC0.018 at VGS = 4.5 V 7.6APPLICATIONS0.017 at VGS = -
vbza4410.pdf
VBZA4410www.VBsemi.comN-Channel 20V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-freeVDS (V) RDS(on) ()ID (A)a Qg (Typ.) TrenchFET Power MOSFET0.011 at VGS = 10 V 1120 6.1 nC Optimized for High-Side Synchronous0.015 at VGS = 4.5 V 9Rectifier Operation 100 % Rg Tested 100 % UIS TestedAPPLICATIONS Notebook CPU Core- High-Side SwitchSO
vbza4409.pdf
VBZA4409www.VBsemi.comP-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-freeVDS (V) RDS(on) ()ID (A)d Qg (Typ.) TrenchFET Power MOSFET0.011at VGS = - 10 V - 11 100 % Rg TestedRoHS- 30 15 nCCOMPLIANT 100 % UIS Tested0.015 at VGS = - 4.5 V - 9APPLICATIONS Load Switch Notebook Adaptor SwitchSO-8 S S1 8 DS D2 7G S3 6
vbza4953a.pdf
VBZA4953Awww.VBsemi.comDual P-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-freeVDS (V) RDS(on) ()ID (A)d, e Qg (Typ.) TrenchFET Power MOSFET0.040 at VGS = - 10 V - 6 100 % UIS TestedRoHS- 30 15 nCCOMPLIANT0.048 at VGS = - 4.5 V - 5APPLICATIONS Load Switches- Notebook PCs- Desktop PCsSO-8S1 S2- Game StationsS1 1 D18G1 2
vbza4946.pdf
VBZA4946www.VBsemi.comDual N-Channel 60 V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET power MOSFETVDS (V) 60 100 % Rg and UIS testedRDS(on) () at VGS = 10 V 0.032RDS(on) () at VGS = 4.5 V 0.040ID (A) per leg6Configuration DualSO-8 DualD2D1 D2D2 5D16D178G1 G24G233S1S2S2 S222GG111N-Channel MOSFET N-Channel M
vbza4611.pdf
VBZA4611www.VBsemi.comN- and P-Channe 60V (D-S) MOSFET-FEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) () DefinitionTyp. ID (A)a Qg (Typ.) TrenchFET Power MOSFET0.012 at VGS = 10 V 9.0 100 % Rg and UIS TestedN-Channel6013 Compliant to RoHS Directive 2002/95/EC0.016 at VGS = 4.5 V 8.0APPLICATIONS0.041 at VGS
vbza4953.pdf
VBZA4953www.VBsemi.comDual P-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-freeVDS (V) RDS(on) ()ID (A)d, e Qg (Typ.) TrenchFET Power MOSFET0.029 at VGS = - 10 V - 7.3 100 % UIS TestedRoHS- 30 17 nCCOMPLIANT0.039 at VGS = - 4.5 V - 6.3APPLICATIONS Load SwitchesS1 S2SO-8S1 1 D18G1 G2G1 2 D17S2 3 D26G2 4 D25Top Vi
vbza4420.pdf
VBZA4420www.VBsemi.comP-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-freeVDS (V) RDS(on) ()ID (A)d Qg (Typ.) TrenchFET Power MOSFET0.013at VGS = - 10 V - 10 100 % Rg TestedRoHS- 30 18 nCCOMPLIANT 100 % UIS Tested0.015 at VGS = - 4.5 V - 9APPLICATIONS Load Switch Notebook Adaptor SwitchSO-8 S S1 8 DS D2 7G S3 6
vbza4412.pdf
VBZA4412www.VBsemi.comN-Channel 20V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-freeVDS (V) RDS(on) ()ID (A)a Qg (Typ.) TrenchFET Power MOSFET0.010 at VGS = 10 V 1320 6.1 nC Optimized for High-Side Synchronous0.015 at VGS = 4.5 V 9Rectifier Operation 100 % Rg Tested 100 % UIS TestedAPPLICATIONS Notebook CPU Core- High-Side SwitchSO
vbza4407.pdf
VBZA4407www.VBsemi.comP-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)d Qg (Typ.)Available0.0125 at VGS = - 10 V - 11.6 TrenchFET Power MOSFET- 30 22 nC 100 % Rg Tested0.018 at VGS = - 4.5 V - 10 100 % UIS TestedAPPLICATIONS Load SwitchesS - Notebook PCsSO-8- Desktop PCs
vbza4042.pdf
VBZA4042www.VBsemi.comN-Channel 40-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)a Qg (Typ.) TrenchFET Power MOSFET0.006 at VGS = 10 V 13 100 % Rg and UIS Tested40 8 nC0.009 at VGS = 4.5 V 11APPLICATIONS Notebook CPU Core- High-Side SwitchD SO-8 SD1 8 G SD2 7 SD3 6 GD4
Другие MOSFET... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP250 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
Список транзисторов
Обновления
MOSFET: AOUS66923 | AOUS66920 | AOUS66620 | AOUS66616 | AOUS66416 | AOUS66414 | AOTE32136C | AOTE21115C | AOTS32338C | AOTS32334C | AOTS26108 | AOTS21319C | AOTS21313C | AOTS21311C | AOTS21115C | AOTL66918