FDC365P - описание и поиск аналогов

November 2007 FDC365P tm P-Channel PowerTrench MOSFET -35V, -4.3A, 55m Features General Description Max rDS(on) = 55m at VGS = -10V, ID = -4.2A This P-Channel MOSFET has been produced using Fairchild Semiconductor s proprietary PowerTrench technology to Max rDS(on) = 80m at VGS = -4.5V, ID = -3.2A deliver low rDS(on) and optimized Bvdss capability to offer RoHS C

February 2002 FDC3612 100V N-Channel PowerTrench MOSFET General Description Features This N-Channel MOSFET has been designed 2.6 A, 100 V RDS(ON) = 125 m @ VGS = 10 V specifically to improve the overall efficiency of DC/DC RDS(ON) = 135 m @ VGS = 6 V converters using either synchronous or conventional switching PWM controllers. It has been optimized

August 2001 FDC3601N Dual N-Channel 100V Specified PowerTrench MOSFET Features General Description 1.0 A, 100 V. RDS(ON)= 500 m @ VGS = 10 V These N-Channel 100V specified MOSFETs are RDS(ON)= 550 m @ VGS = 6.0 V produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored Low gate charge (3.7nC typical) to minimize on-state

January 2004 FDC3616N 100V N-Channel PowerTrench MOSFET General Description Features This N-Channel MOSFET has been designed 3.7 A, 100 V. RDS(ON) = 70 m @ VGS = 10 V specifically to improve the overall efficiency of DC/DC RDS(ON) = 80 m @ VGS = 6.0 V converters using either synchronous or conventional switching PWM controllers. It has been optimized for Hi

November 2011 FDC3612 100V N-Channel PowerTrench MOSFET General Description Features This N-Channel MOSFET has been designed 2.6 A, 100 V RDS(ON) = 125 m @ VGS = 10 V specifically to improve the overall efficiency of DC/DC RDS(ON) = 135 m @ VGS = 6 V converters using either synchronous or conventional switching PWM controllers. It has been optimized

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FDC3601N Dual N-Channel 100V Specified PowerTrench MOSFET Features General Description 1.0 A, 100 V. RDS(ON)= 500 m @ VGS = 10 V These N-Channel 100V specified MOSFETs are RDS(ON)= 550 m @ VGS = 6.0 V produced using ON Semiconductor's advanced PowerTrench process that has been especially tailored Low gate charge (3.7nC typical) to minimize on-state resistance and ye

SMD Type MOSFET N-Channel MOSFET FDC3612-HF ( ) SOT-23-6 Unit mm 0.4+0.1 -0.1 Features 6 5 4 VDS (V) = 100V ID = 2.6 A (VGS = 10V) RDS(ON) 125m (VGS = 10V) RDS(ON) 135m (VGS = 6V) 2 3 1 Fast switching speed +0.02 0.15 -0.02 +0.01 -0.01 +0.2 -0.1 1 6 1.Drain 4.Source 2 5 2.Drain 5.Drain 3.Gate 6.Drain 3 4 Absolute Maximum Ra

SMD Type MOSFET N-Channel MOSFET FDC3612 (KDC3612) ( ) SOT-23-6 Unit mm 0.4+0.1 -0.1 Features 6 5 4 VDS (V) = 100V ID = 2.6 A (VGS = 10V) RDS(ON) 125m (VGS = 10V) RDS(ON) 135m (VGS = 6V) 2 3 1 Fast switching speed +0.02 0.15 -0.02 +0.01 -0.01 +0.2 -0.1 1 6 1.Drain 4.Source 2 5 2.Drain 5.Drain 3.Gate 6.Drain 3 4 Absolute Max