VBZA4850 - описание и поиск аналогов

 ..1. Size:1798K  cn vbsemi
 vbza4850.pdf 

VBZA4850 www.VBsemi.com N-Channel 60-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A)d Qg (Typ.) Definition TrenchFET Power MOSFET 0.027 at VGS = 10 V 8 60 10.5 nC Optimized for Low Side Synchronous 5 0.040 at VGS = 4.5 V Rectifier Operation 100 % Rg and UIS Tested APPLICATIONS D CCFL In

 8.1. Size:1227K  cn vbsemi
 vbza4805.pdf 

VBZA4805 www.VBsemi.com Dual P-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free VDS (V) RDS(on) ( ) ID (A)d, e Qg (Typ.) TrenchFET Power MOSFET 0.035 at VGS = - 10 V - 7 100 % UIS Tested RoHS - 30 15 nC COMPLIANT 0.048 at VGS = - 4.5 V - 5 APPLICATIONS Load Switches - Notebook PCs - Desktop PCs SO-8 S1 S2 - Game Stations S1 1 D1 8 G1 2

 8.2. Size:1322K  cn vbsemi
 vbza4800.pdf 

VBZA4800 www.VBsemi.com N-Channel 20V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free VDS (V) RDS(on) ( ) ID (A)a Qg (Typ.) TrenchFET Power MOSFET 0.09 at VGS = 10 V 14 20 6.1 nC Optimized for High-Side Synchronous 0.015 at VGS = 4.5 V 9 Rectifier Operation 100 % Rg Tested 100 % UIS Tested APPLICATIONS Notebook CPU Core - High-Side Switch SO-

 9.1. Size:1231K  cn vbsemi
 vbza4936.pdf 

VBZA4936 www.VBsemi.com Dual N-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (A) Qg (Typ.) Definition 0.015 at VGS = 10 V TrenchFET Power MOSFET 10 30 15 nC 100 % UIS Tested 0.019 at VGS = 4.5 V 8 100 % Rg Tested Compliant to RoHS Directive 2002/95/EC APPLICATIONS Set Top Box

 9.2. Size:890K  cn vbsemi
 vbza4430.pdf 

VBZA4430 www.VBsemi.com N-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free VDS (V) RDS(on) ( ) ID (A)a Qg (Typ.) TrenchFET Power MOSFET 0.005at VGS = 10 V 18 30 6.8 nC Optimized for High-Side Synchronous 0.006 at VGS = 4.5 V 16 Rectifier Operation 100 % Rg Tested 100 % UIS Tested APPLICATIONS Notebook CPU Core - High-Side Switch S

 9.3. Size:492K  cn vbsemi
 vbza4435.pdf 

VBZA4435 www.VBsemi.com P-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A)d Qg (Typ.) Definition 0.018 at VGS = - 10 V - 9.0 TrenchFET Power MOSFET - 30 13 nC 100 % Rg Tested 0.024 at VGS = - 4.5 V - 7.8 APPLICATIONS Load Switch Battery Switch S SO-8 S 1 8 D G S D 2 7 S 3 6 D

 9.4. Size:2360K  cn vbsemi
 vbza4606.pdf 

VBZA4606 www.VBsemi.com N- and P-Channel 30 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) Definition ID (A)a Qg (Typ.) TrenchFET Power MOSFET 0.015 at VGS = 10 V 9 100 % Rg and UIS Tested N-Channel 30 13 Compliant to RoHS Directive 2002/95/EC 0.020 at VGS = 4.5 V 8 APPLICATIONS 0.021 at VGS = - 10 V - 8

 9.5. Size:1128K  cn vbsemi
 vbza4425.pdf 

VBZA4425 www.VBsemi.com P-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free VDS (V) RDS(on) ( ) ID (A)d Qg (Typ.) TrenchFET Power MOSFET 0.023at VGS = - 10 V - 7 100 % Rg Tested RoHS - 30 28 nC COMPLIANT 100 % UIS Tested 0.030 at VGS = - 4.5 V -5 APPLICATIONS Load Switch Notebook Adaptor Switch SO-8 S S 1 8 D S D 2 7 G S 3 6 D

 9.6. Size:2245K  cn vbsemi
 vbza4618.pdf 

VBZA4618 www.VBsemi.com N- and P-Channel 40V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) Definition Typ. ID (A)a Qg (Typ.) TrenchFET Power MOSFET 0.015 at VGS = 10 V 9.0 100 % Rg and UIS Tested N-Channel 40 13 Compliant to RoHS Directive 2002/95/EC 0.018 at VGS = 4.5 V 7.6 APPLICATIONS 0.017 at VGS = -

 9.7. Size:1229K  cn vbsemi
 vbza4410.pdf 

VBZA4410 www.VBsemi.com N-Channel 20V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free VDS (V) RDS(on) ( ) ID (A)a Qg (Typ.) TrenchFET Power MOSFET 0.011 at VGS = 10 V 11 20 6.1 nC Optimized for High-Side Synchronous 0.015 at VGS = 4.5 V 9 Rectifier Operation 100 % Rg Tested 100 % UIS Tested APPLICATIONS Notebook CPU Core - High-Side Switch SO

 9.8. Size:1060K  cn vbsemi
 vbza4409.pdf 

VBZA4409 www.VBsemi.com P-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free VDS (V) RDS(on) ( ) ID (A)d Qg (Typ.) TrenchFET Power MOSFET 0.011at VGS = - 10 V - 11 100 % Rg Tested RoHS - 30 15 nC COMPLIANT 100 % UIS Tested 0.015 at VGS = - 4.5 V - 9 APPLICATIONS Load Switch Notebook Adaptor Switch SO-8 S S 1 8 D S D 2 7 G S 3 6

 9.9. Size:1679K  cn vbsemi
 vbza4953a.pdf 

VBZA4953A www.VBsemi.com Dual P-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free VDS (V) RDS(on) ( ) ID (A)d, e Qg (Typ.) TrenchFET Power MOSFET 0.040 at VGS = - 10 V - 6 100 % UIS Tested RoHS - 30 15 nC COMPLIANT 0.048 at VGS = - 4.5 V - 5 APPLICATIONS Load Switches - Notebook PCs - Desktop PCs SO-8 S1 S2 - Game Stations S1 1 D1 8 G1 2

 9.10. Size:1775K  cn vbsemi
 vbza4946.pdf 

VBZA4946 www.VBsemi.com Dual N-Channel 60 V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET power MOSFET VDS (V) 60 100 % Rg and UIS tested RDS(on) ( ) at VGS = 10 V 0.032 RDS(on) ( ) at VGS = 4.5 V 0.040 ID (A) per leg 6 Configuration Dual SO-8 Dual D2 D1 D2 D2 5 D1 6 D1 7 8 G1 G2 4 G2 3 3 S1 S2 S2 S2 2 2 G G1 1 1 N-Channel MOSFET N-Channel M

 9.11. Size:2621K  cn vbsemi
 vbza4611.pdf 

VBZA4611 www.VBsemi.com N- and P-Channe 60V (D-S) MOSFET - FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) Definition Typ. ID (A)a Qg (Typ.) TrenchFET Power MOSFET 0.012 at VGS = 10 V 9.0 100 % Rg and UIS Tested N-Channel 60 13 Compliant to RoHS Directive 2002/95/EC 0.016 at VGS = 4.5 V 8.0 APPLICATIONS 0.041 at VGS

 9.12. Size:480K  cn vbsemi
 vbza4953.pdf 

VBZA4953 www.VBsemi.com Dual P-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free VDS (V) RDS(on) ( ) ID (A)d, e Qg (Typ.) TrenchFET Power MOSFET 0.029 at VGS = - 10 V - 7.3 100 % UIS Tested RoHS - 30 17 nC COMPLIANT 0.039 at VGS = - 4.5 V - 6.3 APPLICATIONS Load Switches S1 S2 SO-8 S1 1 D1 8 G1 G2 G1 2 D1 7 S2 3 D2 6 G2 4 D2 5 Top Vi

 9.13. Size:1442K  cn vbsemi
 vbza4420.pdf 

VBZA4420 www.VBsemi.com P-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free VDS (V) RDS(on) ( ) ID (A)d Qg (Typ.) TrenchFET Power MOSFET 0.013at VGS = - 10 V - 10 100 % Rg Tested RoHS - 30 18 nC COMPLIANT 100 % UIS Tested 0.015 at VGS = - 4.5 V - 9 APPLICATIONS Load Switch Notebook Adaptor Switch SO-8 S S 1 8 D S D 2 7 G S 3 6

 9.14. Size:1461K  cn vbsemi
 vbza4412.pdf 

VBZA4412 www.VBsemi.com N-Channel 20V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free VDS (V) RDS(on) ( ) ID (A)a Qg (Typ.) TrenchFET Power MOSFET 0.010 at VGS = 10 V 13 20 6.1 nC Optimized for High-Side Synchronous 0.015 at VGS = 4.5 V 9 Rectifier Operation 100 % Rg Tested 100 % UIS Tested APPLICATIONS Notebook CPU Core - High-Side Switch SO

 9.15. Size:443K  cn vbsemi
 vbza4407.pdf 

VBZA4407 www.VBsemi.com P-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A)d Qg (Typ.) Available 0.0125 at VGS = - 10 V - 11.6 TrenchFET Power MOSFET - 30 22 nC 100 % Rg Tested 0.018 at VGS = - 4.5 V - 10 100 % UIS Tested APPLICATIONS Load Switches S - Notebook PCs SO-8 - Desktop PCs

 9.16. Size:1100K  cn vbsemi
 vbza4042.pdf 

VBZA4042 www.VBsemi.com N-Channel 40-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A)a Qg (Typ.) TrenchFET Power MOSFET 0.006 at VGS = 10 V 13 100 % Rg and UIS Tested 40 8 nC 0.009 at VGS = 4.5 V 11 APPLICATIONS Notebook CPU Core - High-Side Switch D SO-8 SD 1 8 G SD 2 7 SD 3 6 GD 4