VBZE12N10 - аналоги, даташиты, параметры транзистора

VBZE12N10 Datasheet (PDF)

..1. Size:1444K cn vbsemi
vbze12n10.pdf pdf_icon

VBZE12N10www.VBsemi.comN-Channel 100 V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) ()ID (A) 175 C Junction Temperature100at VGS = 10 V0.090 17 PWM Optimized 100 % Rg Tested Compliant to RoHS Directive 2002/95/ECAPPLICATIONS Primary Side SwitchDTO-252 GSG D S N-Channel MOSFETABSOLUTE MAXIMUM RATINGS

7.1. Size:1633K cn vbsemi
vbze12n06.pdf pdf_icon

VBZE12N06www.VBsemi.comN-Channel 60 V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) () Max. ID (A) Qg (Typ.) 100 % Rg and UIS Tested0.095at VGS = 10 V 16 Material categorization:60 19.8For definitions of compliance please see0.110 at VGS = 4.5 V 13TO-252APPLICATIONSD DC/DC Converters DC/AC Inverters Motor Dr

7.2. Size:2307K cn vbsemi
vbze12n03.pdf pdf_icon

VBZE12N03www.VBsemi.comN-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) ()ID (A)a, e Qg (Typ) 100 % Rg and UIS Tested Compliant to RoHS Directive 2011/65/EU0.014at VGS = 10 V 4030 28nC0.020at VGS = 4.5 V 35APPLICATIONSD OR-ing ServerTO-252 DC/DCGG D SSTop ViewN-Channel MOSFETABSOLU

8.1. Size:834K cn vbsemi
vbze12p10.pdf pdf_icon

VBZE12P10www.VBsemi.comP-Channel 100 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) () ID (A) Qg (Typ.)Definition0.180 at VGS = - 10 V - 7.5 TrenchFET Power MOSFET- 100 110.200 at VGS = - 4.5 V - 6 100 % Rg and UIS Tested Compliant to RoHS Directive 2002/95/ECAPPLICATIONS Power Switch DC/DC Con

Другие MOSFET... VBZE06N02 , VBZE06N03 , VBZE100N02 , VBZE100N03 , VBZE100P03 , VBZE10N20 , VBZE12N03 , VBZE12N06 , P0903BDG , VBZE12P10 , VBZE15N03 , VBZE15N10 , VBZE16N05 , VBZE20N03 , VBZE20N06 , VBZE20N10 , VBZE20N20 .