VBZE20N06 - параметры транзистора MOSFET, его аналоги, datasheet

VBZE20N06 Datasheet (PDF)

..1. Size:1054K cn vbsemi
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VBZE20N06www.VBsemi.comN-Channel 6 0-V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) rDS(on) ()ID (A)aAvailable 175 C Junction Temperature0.023 at VGS = 10 V 45RoHS*600.030 at VGS = 4.5 V 30 COMPLIANTTO-252 DGDrain Connected to TabG D SSTop ViewN-Channel MOSFETABSOLUTE MAXIMUM RATINGS TC = 25 C, unless otherwise no

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VBZE20N03www.VBsemi.comN-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) ()ID (A)a, e Qg (Typ) 100 % Rg and UIS Tested Compliant to RoHS Directive 2011/65/EU0.011 at VGS = 10 V 5030 28nC0.016 at VGS = 4.5 V 40APPLICATIONSD OR-ing ServerTO-252 DC/DCGG D SSTop ViewN-Channel MOSFETABSO

7.1. Size:1435K cn vbsemi
vbze20n20.pdf pdf_icon

VBZE20N20www.VBsemi.comN-Channel 200 V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) ()ID (A) 175 C Junction Temperature2000.054 at VGS = 10 V 25 PWM Optimized 100 % Rg Tested Compliant to RoHS Directive 2002/95/ECAPPLICATIONS Primary Side SwitchDTO-252 GSG D S N-Channel MOSFETABSOLUTE MAXIMUM RATI

7.2. Size:1418K cn vbsemi
vbze20n10.pdf pdf_icon

VBZE20N10www.VBsemi.comN-Channel 100-V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) ()ID (A) 175 C Junction Temperature100 0.110 at VGS = 10 V 15 PWM Optimized 100 % Rg Tested Compliant to RoHS Directive 2002/95/ECAPPLICATIONS Primary Side SwitchDTO-252 GSG D S N-Channel MOSFETABSOLUTE MAXIMUM RATINGS (

Другие MOSFET... VBZE12N03 , VBZE12N06 , VBZE12N10 , VBZE12P10 , VBZE15N03 , VBZE15N10 , VBZE16N05 , VBZE20N03 , 7N60 , VBZE20N10 , VBZE20N20 , VBZE20P03 , VBZE20P06 , VBZE2810 , VBZE2N60 , VBZE30N02 , VBZE30N03 .