VBZE2810 - описание и поиск аналогов

 ..1. Size:1710K  cn vbsemi
 vbze2810.pdf 

VBZE2810 www.VBsemi.com N-Channel 80 V (D-S) MOSFET FEATURES TrenchFET Power MOSFET PRODUCT SUMMARY 100 % Rg and UIS Tested VDS (V) RDS(on) ( ) Max. ID (A) Qg (Typ.) 80 0.006at VGS = 10 V 100 19 nC APPLICATIONS Primary Side Switching TO-252 Synchronous Rectification D DC/AC Inverters LED Backlighting G S D G S N-Channel MOSFET Top View ABSOLUTE

 9.1. Size:1435K  cn vbsemi
 vbze20n20.pdf 

VBZE20N20 www.VBsemi.com N-Channel 200 V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) RDS(on) ( )ID (A) 175 C Junction Temperature 200 0.054 at VGS = 10 V 25 PWM Optimized 100 % Rg Tested Compliant to RoHS Directive 2002/95/EC APPLICATIONS Primary Side Switch D TO-252 G S G D S N-Channel MOSFET ABSOLUTE MAXIMUM RATI

 9.2. Size:1391K  cn vbsemi
 vbze2n60.pdf 

VBZE2N60 www.VBsemi.com N-Channel 600 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) 600 Definition Dynamic dV/dt Rating RDS(on) ( )VGS = 10 V 3.5 Repetitive Avalanche Rated Qg (Max.) (nC) 18 Surface Mount (IRFRC20, SiHFRC20) Qgs (nC) 3.0 Straight Lead (IRFUC20, SiHFUC20) Qgd (nC) 8.9 Available in Tape and Reel

 9.3. Size:1413K  cn vbsemi
 vbze20p03.pdf 

VBZE20P03 www.VBsemi.com P-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free VDS (V) RDS(on) ( ) ID (A)d Qg (Typ.) TrenchFET Power MOSFET 0.033 at VGS = - 10 V - 43 100 % Rg Tested RoHS - 30 19 nC COMPLIANT 100 % UIS Tested 0.040 at VGS = - 4.5 V - 30 APPLICATIONS Load Switch Notebook Adaptor Switch S TO-252 G G D S D Top View P-

 9.4. Size:1418K  cn vbsemi
 vbze20n10.pdf 

VBZE20N10 www.VBsemi.com N-Channel 100-V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) RDS(on) ( )ID (A) 175 C Junction Temperature 100 0.110 at VGS = 10 V 15 PWM Optimized 100 % Rg Tested Compliant to RoHS Directive 2002/95/EC APPLICATIONS Primary Side Switch D TO-252 G S G D S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (

 9.5. Size:2035K  cn vbsemi
 vbze20n03.pdf 

VBZE20N03 www.VBsemi.com N-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) RDS(on) ( ) ID (A)a, e Qg (Typ) 100 % Rg and UIS Tested Compliant to RoHS Directive 2011/65/EU 0.011 at VGS = 10 V 50 30 28nC 0.016 at VGS = 4.5 V 40 APPLICATIONS D OR-ing Server TO-252 DC/DC G G D S S Top View N-Channel MOSFET ABSO

 9.6. Size:1054K  cn vbsemi
 vbze20n06.pdf 

VBZE20N06 www.VBsemi.com N-Channel 6 0-V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) rDS(on) ( ) ID (A)a Available 175 C Junction Temperature 0.023 at VGS = 10 V 45 RoHS* 60 0.030 at VGS = 4.5 V 30 COMPLIANT TO-252 D G Drain Connected to Tab G D S S Top View N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TC = 25 C, unless otherwise no

 9.7. Size:829K  cn vbsemi
 vbze20p06.pdf 

VBZE20P06 www.VBsemi.com P-Channel 60-V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) RDS(on) ( ) ID (A) Qg (Typ) 100 % UIS Tested 0.061 at VGS = - 10 V - 40 APPLICATIONS - 60 10 0.072 at VGS = - 4.5 V - 26 Load Switch S TO-252 G G D S Top View D P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TC = 25 C, unless otherwise noted Parameter Sy