VBZE30N10 - параметры транзистора MOSFET, его аналоги, datasheet

VBZE30N10 Datasheet (PDF)

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VBZE30N10www.VBsemi.comN-Channel 100-V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETSV(BR)DSS (V) rDS(on) ()ID (A)Available 175 C Junction Temperature1000.030 at VGS = 10 V 35RoHS* Low Thermal Resistance PackageCOMPLIANTDTO-252GG D STop ViewSN-Channel MOSFETABSOLUTE MAXIMUM RATINGS TC = 25 C, unless otherwise notedParame

7.1. Size:2034K cn vbsemi
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VBZE30N02www.VBsemi.comN-Channel 20-V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) ()ID (A)a, e Qg (Typ) 100 % Rg and UIS Tested Compliant to RoHS Directive 2011/65/EU0.004 at VGS = 4.5 V 13020 90 nC0.006at VGS = 2.5 V 100APPLICATIONSD OR-ing ServerTO-252 DC/DCGG D STop ViewSN-Channel MOSFETA

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vbze30n06.pdf pdf_icon

VBZE30N06www.VBsemi.comN-Channel 60 V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) () Max. ID (A) Qg (Typ.) 100 % Rg and UIS Tested220.073at VGS = 10 V Material categorization:60 19.8For definitions of compliance please see0.097 at VGS = 4.5 V 16TO-252APPLICATIONSD DC/DC Converters DC/AC Inverters Motor D

7.3. Size:2693K cn vbsemi
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VBZE30N03www.VBsemi.comN-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) ()ID (A)a, e Qg (Typ) 100 % Rg and UIS Tested Compliant to RoHS Directive 2011/65/EU0.015at VGS = 10 V 3530 28nC0.025at VGS = 4.5 V 30APPLICATIONSD OR-ing ServerTO-252 DC/DCGG D SSTop ViewN-Channel MOSFETABSOLU

Другие MOSFET... VBZE20N20 , VBZE20P03 , VBZE20P06 , VBZE2810 , VBZE2N60 , VBZE30N02 , VBZE30N03 , VBZE30N06 , IRF520 , VBZE40N03 , VBZE40N06 , VBZE40N10 , VBZE40P03 , VBZE40P06 , VBZE40P10 , VBZE4204 , VBZE4286 .