Справочник MOSFET. VBZE50P03

 

VBZE50P03 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: VBZE50P03
   Тип транзистора: MOSFET
   Полярность: P
   Pdⓘ - Максимальная рассеиваемая мощность: 127 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 30 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 50 A
   Tjⓘ - Максимальная температура канала: 175 °C
   trⓘ - Время нарастания: 225 ns
   Cossⓘ - Выходная емкость: 1565 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.013 Ohm
   Тип корпуса: TO252

 Аналог (замена) для VBZE50P03

 

 

VBZE50P03 Datasheet (PDF)

 ..1. Size:486K  cn vbsemi
 vbze50p03.pdf

VBZE50P03 VBZE50P03

VBZE50P03www.VBsemi.comP-Channel 30 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Compliant to RoHS Directive 2002/95/ECVDS (V) RDS(on) ()ID (A)aAvailable0.011 at VGS = - 10 V 50RoHS*- 30COMPLIANT0.013 at VGS = - 4.5 V 45STO-252GDG SDTop ViewP-Channel MOSFETABSOLUTE MAXIMUM RATINGS (TC = 25 C, unless otherwise noted)Parameter Symbol Limit UnitG

 6.1. Size:1186K  cn vbsemi
 vbze50p04.pdf

VBZE50P03 VBZE50P03

VBZE50P04www.VBsemi.comP-Channel 4 0 V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET power MOSFETVDS (V)-40 Package with low thermal resistanceRDS(on) () at VGS = -10 V0.010 100 % Rg and UIS testedRDS(on) () at VGS = -4.5 V0.013ID (A) -65Configuration SingleTO-252SGDDG SP-Channel MOSFETTop ViewABSOLUTE MAXIMUM RATINGS (TC = 25 C

 6.2. Size:1245K  cn vbsemi
 vbze50p06.pdf

VBZE50P03 VBZE50P03

VBZE50P06www.VBsemi.comP-Channel 60 V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) ()ID (A) Material categorization:0.020 at VGS = - 10 V - 50- 600.025 at VGS = - 4.5 V - 45APPLICATIONS Load SwitchTO-252SGDG SDTop ViewP-Channel MOSFETABSOLUTE MAXIMUM RATINGS (TA = 25 C, unless otherwise noted)Parameter

 8.1. Size:1066K  cn vbsemi
 vbze50n06.pdf

VBZE50P03 VBZE50P03

VBZE50N06www.VBsemi.comN-Channel 60 V (D-S) MOSFETFEATURESPRODUCT SUMMARY 175 C Junction TemperatureVDS (V) RDS(on) ()ID (A)a TrenchFET Power MOSFET0.009 at VGS = 10 V 60 Material categorization:600.011at VGS = 4.5 V 50DTO-252 GSG D S N-Channel MOSFETABSOLUTE MAXIMUM RATINGS (TC = 25 C, unless otherwise noted)Parameter Symbol Limit

 8.2. Size:2414K  cn vbsemi
 vbze50n03.pdf

VBZE50P03 VBZE50P03

VBZE50N03www.VBsemi.comN-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) ()ID (A)a, e Qg (Typ) 100 % Rg and UIS Tested Compliant to RoHS Directive 2011/65/EU0.010 at VGS = 10 V 5330 28nC0.016 at VGS = 4.5 V 40APPLICATIONSD OR-ing ServerTO-252 DC/DCGG D SSTop ViewN-Channel MOSFETABSO

 8.3. Size:1323K  cn vbsemi
 vbze50n04.pdf

VBZE50P03 VBZE50P03

VBZE50N04www.VBsemi.comN-Channel 4 0-V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) ()ID (A)a, e Qg (Typ) 100 % Rg and UIS Tested Compliant to RoHS Directive 2011/65/EU0.012 at VGS = 10 V 5040 36 nC0.014 at VGS = 4.5 V 40APPLICATIONSD OR-ingTO-252 Server DC/DCGDG SSTop ViewN-Channel MOSFETA

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