VBZFB40P04 - описание и поиск аналогов

 ..1. Size:999K  cn vbsemi
 vbzfb40p04.pdf 

VBZFB40P04 www.VBsemi.com P-Channel 4 0 V (D-S) MOSFET FEATURES -40 V Halogen-free According to IEC 61249-2-21 VDS Definition RDS(on),typ VGS=10V 10 m TrenchFET Power MOSFET RDS(on),typ VGS=4.5V 14 m 100 % Rg and UIS Tested Compliant to RoHS Directive 2002/95/EC -55 A ID APPLICATIONS Power Switch DC/DC Converters S TO-251 G D G D S Top View

 5.1. Size:1179K  cn vbsemi
 vbzfb40p06.pdf 

VBZFB40P06 www.VBsemi.com P-Channel 60 V (D-S) MOSFET FEATURES -60 V VDS Halogen-free According to IEC 61249-2-21 RDS(on),typ VGS=10V 48 m Definition TrenchFET Power MOSFET 57 RDS(on),typ VGS=4.5V m 100 % UIS Tested A ID -30 Compliant to RoHS Directive 2002/95/EC APPLICATIONS High Side Switch for Full Bridge Converter TO-251 DC/DC Converter for

 5.2. Size:920K  cn vbsemi
 vbzfb40p03.pdf 

 7.1. Size:821K  cn vbsemi
 vbzfb40n06.pdf 

VBZFB40N06 www.VBsemi.com N-Channel 60 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) 60 Definition RDS(on) ( ) at VGS = 10 V 0.032 TrenchFET Power MOSFET RDS(on) ( ) at VGS = 4.5 V 0.036 100 % Rg and UIS Tested ID (A) 25 Compliant to RoHS Directive 2002/95/EC Configuration Single APPLICATIONS Power Supply - S

 7.2. Size:1270K  cn vbsemi
 vbzfb40n03.pdf 

VBZFB40N03 www.VBsemi.com N-Channel 30-V (D-S) MOSFET PRODUCT SUMMARY FEATURES VDS 30 V Halogen-free 15 RDS(on) VGS = 10 V m TrenchFET Gen III Power MOSFET 20 RDS(on) VGS = 4.5 V m 100 % Rg Tested RoHS 40 ID A COMPLIANT 100 % UIS Tested Configuration Single APPLICATIONS TO-251 DC/DC Conversion D - System Power G S N-Channel MOSFET G D

 7.3. Size:644K  cn vbsemi
 vbzfb40n10.pdf 

VBZFB40N10 www.VBsemi.com N-Channel 200V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) RDS(on) ( )ID (A) 175 C Junction Temperature 0.056 at VGS = 10 V 200 30 PWM Optimized 100 % Rg Tested Compliant to RoHS Directive 2002/95/EC TO-251 APPLICATIONS Primary Side Switch D Drain Connected to G Drain-Tab G D S S Top View N-