FDC6318P Даташит. Основные параметры и характеристики. Поиск аналогов
Наименование прибора: FDC6318P
Тип транзистора: MOSFET
Полярность: P
Pdⓘ - Максимальная рассеиваемая мощность: 0.96 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 12 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 8 V
|Id|ⓘ - Максимально допустимый постоянный ток стока: 2.5 A
Tjⓘ - Максимальная температура канала: 150 °C
trⓘ - Время нарастания: 14 ns
Cossⓘ - Выходная емкость: 194 pf
Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.09 Ohm
Тип корпуса: SSOT6
- подбор MOSFET транзистора по параметрам
FDC6318P Datasheet (PDF)
fdc6318p.pdf

December 2001 FDC6318P Dual P-Channel 1.8V PowerTrench Specified MOSFET General Description Features These P-Channel 1.8V specified MOSFETs are 2.5 A, 12 V. RDS(ON) = 90 m @ VGS = 4.5 V produced using Fairchild Semiconductor's advanced RDS(ON) = 125 m @ VGS = 2.5 V PowerTrench process that has been especially tailored RDS(ON) = 200 m
fdc6318p.pdf

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur
fdc6312p.pdf

January 2001FDC6312PDual P-Channel 1.8V PowerTrench Specified MOSFETGeneral Description FeaturesThese P-Channel 1.8V specified MOSFETs are 2.3 A, 20 V. RDS(ON) = 115 m @ VGS = 4.5 Vproduced using Fairchild Semiconductor's advancedRDS(ON) = 155 m @ VGS = 2.5 VPowerTrench process that has been especially tailoredRDS(ON) = 225 m @ VGS =
fdc6310p.pdf

April 2001 FDC6310P Dual P-Channel 2.5V Specified PowerTrench MOSFET General Description Features These P-Channel 2.5V specified MOSFETs are 2.2 A, 20 V. R = 125 m @ V = 4.5 V DS(ON) GSproduced using Fairchild Semiconductor's advanced R = 190 m @ V = 2.5 V DS(ON) GSPowerTrench process that has been especially tailored to minimize on-state resistance
Другие MOSFET... FDC5661N-F085 , FDC602P , FDC604P , FDC606P , FDC608PZ , FDC610PZ , FDC6310P , FDC6312P , IRFP260N , FDC6320C , STU303S , FDC6321C , STU3030NLS , FDC6327C , STU17L01 , FDC6333C , STU16L01 .
History: IRF241 | NCE70T180D
History: IRF241 | NCE70T180D



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