Справочник MOSFET. NCE0130A

 

NCE0130A MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: NCE0130A
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 85 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 100 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Vgs(th)|ⓘ - Пороговое напряжение включения: 2.5 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 30 A
   Tjⓘ - Максимальная температура канала: 175 °C
   Qgⓘ - Общий заряд затвора: 67.2 nC
   trⓘ - Время нарастания: 9 ns
   Cossⓘ - Выходная емкость: 96 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.032 Ohm
   Тип корпуса: TO220

 Аналог (замена) для NCE0130A

 

 

NCE0130A Datasheet (PDF)

 ..1. Size:346K  ncepower
nce0130a.pdf

NCE0130A
NCE0130A

NCE0130Ahttp://www.ncepower.com NCE N-Channel Enhancement Mode Power MOSFET Description The NCE0130A uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS = 100V,ID =30A Schematic diagram RDS(ON)

 7.1. Size:407K  ncepower
nce0130ka.pdf

NCE0130A
NCE0130A

NCE0130KAhttp://www.ncepower.com NCE N-Channel Enhancement Mode Power MOSFET Description The NCE0130KA uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS = 100V,ID =30A Schematic diagram RDS(ON)

 7.2. Size:364K  ncepower
nce0130ga.pdf

NCE0130A
NCE0130A

http://www.ncepower.com NCE0130GANCE N-Channel Enhancement Mode Power MOSFET Description General Features The NCE0130GA uses advanced trench technology and VDS = 100V,ID =30A design to provide excellent RDS(ON) with low gate charge. It RDS(ON)

 9.1. Size:441K  1
nce0117k.pdf

NCE0130A
NCE0130A

NCE0117Khttp://www.ncepower.com NCE N-Channel Enhancement Mode Power MOSFET Description The NCE0117K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =100V,ID =17A RDS(ON)

 9.2. Size:358K  ncepower
nce01h13.pdf

NCE0130A
NCE0130A

Pb Free ProductNCE01H13http://www.ncepower.com NCE N-Channel Enhancement Mode Power MOSFET Description The NCE01H13 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =100V,ID =130A RDS(ON)

 9.3. Size:311K  ncepower
nce0125ai.pdf

NCE0130A
NCE0130A

Pb Free Producthttp://www.ncepower.com NCE0125AINCE N-Channel Enhancement Mode Power MOSFET Description The NCE0125AI uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS = 100V,ID =25A RDS(ON)

 9.4. Size:373K  ncepower
nce0117.pdf

NCE0130A
NCE0130A

Pb Free Producthttp://www.ncepower.com NCE0117NCE N-Channel Enhancement Mode Power MOSFET Description The NCE0117 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =100V,ID =17A RDS(ON)

 9.5. Size:621K  ncepower
nce0102e.pdf

NCE0130A
NCE0130A

NCE0102Ehttp://www.ncepower.comNCE N-Channel Enhancement Mode Power MOSFETDescriptionThe NCE0102E uses advanced trench technology anddesign to provide excellent R with low gate charge. ItDS(ON)can be used in a wide variety of applications.General Features V = 100V,I = 2ADS DR

 9.6. Size:448K  ncepower
nce0110ak.pdf

NCE0130A
NCE0130A

Pb Free Producthttp://www.ncepower.com NCE0110AKNCE N-Channel Enhancement Mode Power MOSFET Description The NCE0110AK uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =100V,ID =10A RDS(ON)

 9.7. Size:670K  ncepower
nce01p30k.pdf

NCE0130A
NCE0130A

http://www.ncepower.comNCE01P30KNCE P-Channel Enhancement Mode Power MOSFETDescriptionThe NCE01P30K uses advanced trench technology anddesign to provide excellent R with low gate charge. It canDS(ON)be used in a wide variety of applications. It is ESD protested.General Features V =-100V,I =-30A Schematic diagramDS DR

 9.8. Size:380K  ncepower
nce0159.pdf

NCE0130A
NCE0130A

Pb Free Producthttp://www.ncepower.com NCE0159NCE N-Channel Enhancement Mode Power MOSFET Description The NCE0159 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS = 100V,ID =59A RDS(ON)

 9.9. Size:416K  ncepower
nce0115k.pdf

NCE0130A
NCE0130A

Pb Free Producthttp://www.ncepower.com NCE0115KNCE N-Channel Enhancement Mode Power MOSFET Description The NCE0115K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =100V,ID =15A RDS(ON)

 9.10. Size:701K  ncepower
nce0157g.pdf

NCE0130A
NCE0130A

http://www.ncepower.comNCE0157GNCE N-Channel Enhancement Mode Power MOSFETDescriptionThe NCE0157G uses advanced trench technology and designGeneral Featuresto provide excellent R with low gate charge. It can be V =100V,I =57ADS(ON) DS Dused in a wide variety of applications. R

 9.11. Size:287K  ncepower
nce0102m.pdf

NCE0130A
NCE0130A

Pb Free Producthttp://www.ncepower.com NCE0102MNCE N-Channel Enhancement Mode Power MOSFET Description DThe NCE0102M uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It Gcan be used in a wide variety of applications. General Features S VDS = 100V,ID = 2A Schematic diagram RDS(ON)

 9.12. Size:303K  ncepower
nce0102z.pdf

NCE0130A
NCE0130A

Pb Free Producthttp://www.ncepower.com NCE0102ZNCE N-Channel Enhancement Mode Power MOSFET Description DThe NCE0102Z uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It Gcan be used in a wide variety of applications. General Features S VDS = 100V,ID = 2A Schematic diagram RDS(ON)

 9.13. Size:318K  ncepower
nce0140ia.pdf

NCE0130A
NCE0130A

Pb Free ProductNCE0140IAhttp://www.ncepower.com NCE N-Channel Enhancement Mode Power MOSFET Description The NCE0140IA uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS = 100V,ID =40A Schematic diagram RDS(ON)

 9.14. Size:308K  ncepower
nce01h21t.pdf

NCE0130A
NCE0130A

Pb Free Producthttp://www.ncepower.com NCE01H21TNCE N-Channel Enhancement Mode Power MOSFET Description The NCE01H21T uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of other applications. General Features VDSS =100V,ID =210A RDS(ON)

 9.15. Size:410K  ncepower
nce0140k2.pdf

NCE0130A
NCE0130A

Pb Free Producthttp://www.ncepower.com NCE0140K2NCE N-Channel Enhancement Mode Power MOSFET Description The NCE0140K2 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS = 100V,ID =40A RDS(ON)

 9.16. Size:330K  ncepower
nce0103m.pdf

NCE0130A
NCE0130A

Pb Free Producthttp://www.ncepower.com NCE0103MNCE N-Channel Enhancement Mode Power MOSFET Description The NCE0103M uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS = 100V,ID = 3A RDS(ON)

 9.17. Size:402K  ncepower
nce0110k.pdf

NCE0130A
NCE0130A

Pb Free Producthttp://www.ncepower.com NCE0110KNCE N-Channel Enhancement Mode Power MOSFET Description The NCE0110K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =100V,ID =9.6A RDS(ON)

 9.18. Size:653K  ncepower
nce0117ak.pdf

NCE0130A
NCE0130A

NCE0117AKhttp://www.ncepower.comNCE N-Channel Enhancement Mode Power MOSFETDescriptionThe NCE0117AK uses advanced trench technology anddesign to provide excellent R with low gate charge. ItDS(ON)can be used in a wide variety of applications.General Features V =100V,I =17ADS DR

 9.19. Size:333K  ncepower
nce0106ar.pdf

NCE0130A
NCE0130A

http://www.ncepower.com NCE0106ARNCE N-Channel Enhancement Mode Power MOSFET Description The NCE0106AR uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS = 100V,ID = 6A RDS(ON)

 9.20. Size:922K  ncepower
nce011n30gu.pdf

NCE0130A
NCE0130A

NCE011N30GUhttp://www.ncepower.comNCE N-Channel Enhancement Mode Power MOSFETDescriptionThe NCE011N30GU uses advanced trench technology andGeneral Featuresdesign to provide excellent R with low gate charge. It can V =30V,I =325ADS(ON) DS Dbe used in a wide variety of applications. R =0.75m (typical) @ V =10VDS(ON) GSR =1.5m (typical) @ V =4.5VApplication DS(ON) GS

 9.21. Size:657K  ncepower
nce0104s.pdf

NCE0130A
NCE0130A

http://www.ncepower.comNCE0104SNCE N-Channel Enhancement Mode Power MOSFETDescriptionThe NCE0104S uses advanced trench technology anddesign to provide excellent R with low gate charge. ItDS(ON)can be used in a wide variety of applications.General Features V =100V,I =4ADS DR

 9.22. Size:433K  ncepower
nce0108as.pdf

NCE0130A
NCE0130A

Pb Free ProductNCE0108AShttp://www.ncepower.com NCE N-Channel Enhancement Mode Power MOSFET Description The NCE0108AS uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS = 100V,ID =8A Schematic diagram RDS(ON)

 9.23. Size:343K  ncepower
nce01p18l.pdf

NCE0130A
NCE0130A

http://www.ncepower.com NCE01P18LNCE P-Channel Enhancement Mode Power MOSFET Description The NCE01P18L uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. It is ESD protested. General Features VDS =-100V,ID =-18A RDS(ON)

 9.24. Size:391K  ncepower
nce0125ak.pdf

NCE0130A
NCE0130A

Pb Free Producthttp://www.ncepower.com NCE0125AKNCE N-Channel Enhancement Mode Power MOSFET Description The NCE0125AK uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS = 100V,ID =25A Schematic diagram RDS(ON)

 9.25. Size:562K  ncepower
nce01p18d.pdf

NCE0130A
NCE0130A

http://www.ncepower.com NCE01P18DNCE P-Channel Enhancement Mode Power MOSFET Description The NCE01P18D uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. It is ESD protested. General Features VDS =-100V,ID =-18A RDS(ON)

 9.26. Size:350K  ncepower
nce01p03s.pdf

NCE0130A
NCE0130A

Pb Free Producthttp://www.ncepower.com NCE01P03SNCE P-Channel Enhancement Mode Power MOSFET Description The NCE01P03S uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. It is ESD protested. General Features VDS =-100V,ID =-3A Schematic diagram RDS(ON)

 9.27. Size:458K  ncepower
nce0160g.pdf

NCE0130A
NCE0130A

Pb Free Producthttp://www.ncepower.com NCE0160GNCE N-Channel Enhancement Mode Power MOSFET Description The NCE0160G uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. This device is suitable for use in PWM, load switching and general purpose applications. General Features VDS = 100V,ID =60A RDS(ON)

 9.28. Size:436K  ncepower
nce0117k.pdf

NCE0130A
NCE0130A

Pb Free Producthttp://www.ncepower.com NCE0117KNCE N-Channel Enhancement Mode Power MOSFET Description The NCE0117K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =100V,ID =17A RDS(ON)

 9.29. Size:384K  ncepower
nce01p05s.pdf

NCE0130A
NCE0130A

http://www.ncepower.com NCE01P05SNCE P-Channel Enhancement Mode Power MOSFET Description The NCE01P05S uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. It is ESD protested. General Features VDS =-100V,ID =-5A Schematic diagram RDS(ON)

 9.30. Size:668K  ncepower
nce0105m.pdf

NCE0130A
NCE0130A

http://www.ncepower.comNCE0105MNCE N-Channel Enhancement Mode Power MOSFETDescriptionThe NCE0105M uses advanced trench technology anddesign to provide excellent R with low gate charge. ItDS(ON)can be used in a wide variety of applications.General Features V = 100V,I = 5ADS DR

 9.31. Size:337K  ncepower
nce0103.pdf

NCE0130A
NCE0130A

Pb Free Producthttp://www.ncepower.com NCE0103NCE N-Channel Enhancement Mode Power MOSFET Description The NCE0103 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS = 100V,ID = 3A Schematic diagram RDS(ON)

 9.32. Size:328K  ncepower
nce0103y.pdf

NCE0130A
NCE0130A

Pb Free Producthttp://www.ncepower.com NCE0103YNCE N-Channel Enhancement Mode Power MOSFET Description The NCE0103Y uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS = 100V,ID = 3A Schematic diagram RDS(ON)

 9.33. Size:312K  ncepower
nce0102a.pdf

NCE0130A
NCE0130A

http://www.ncepower.com NCE0102ANCE N-Channel Enhancement Mode Power MOSFET DDescription The NCE0102A uses advanced trench technology and Gdesign to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. SGeneral Features Schematic diagram VDS = 100V,ID = 2A RDS(ON)

 9.34. Size:374K  ncepower
nce0157.pdf

NCE0130A
NCE0130A

Pb Free Producthttp://www.ncepower.com NCE0157NCE N-Channel Enhancement Mode Power MOSFET Description The NCE0157 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS = 100V,ID =57A RDS(ON)

 9.35. Size:592K  ncepower
nce01nd03s.pdf

NCE0130A
NCE0130A

NCE01ND03Shttp://www.ncepower.comNCE N-Channel Enhancement Mode Power MOSFETDescriptionThe NCE01ND03S uses advanced trench technology anddesign to provide excellent R with low gate charge. ItDS(ON)can be used in a wide variety of applications.Schematic diagramGeneral Features V =100V,I =3ADS DR

 9.36. Size:294K  ncepower
nce0102.pdf

NCE0130A
NCE0130A

Pb Free Producthttp://www.ncepower.com NCE0102NCE N-Channel Enhancement Mode Power MOSFET Description DThe NCE0102 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It Gcan be used in a wide variety of applications. SGeneral Features VDS = 100V,ID = 2A Schematic diagram RDS(ON)

 9.37. Size:713K  ncepower
nce01p18.pdf

NCE0130A
NCE0130A

http://www.ncepower.comNCE01P18NCE P-Channel Enhancement Mode Power MOSFETDescriptionThe NCE01P18 uses advanced trench technology and designto provide excellent R with low gate charge. It can be usedDS(ON)in a wide variety of applications. It is ESD protested.General Features V =-100V,I =-18A Schematic diagramDS DR

 9.38. Size:422K  ncepower
nce0115ak.pdf

NCE0130A
NCE0130A

http://www.ncepower.com NCE0115AKNCE N-Channel Enhancement Mode Power MOSFET Description The NCE0115AK uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =100V,ID =15A RDS(ON)

 9.39. Size:631K  ncepower
nce0157a2d.pdf

NCE0130A
NCE0130A

Pb Free Producthttp://www.ncepower.comNCE0157A2DNCE N-Channel Enhancement Mode Power MOSFETDescriptionThe NCE0157A2D uses advanced trench technology anddesign to provide excellent R with low gate charge. ItDS(ON)can be used in a wide variety of applications.General Features V = 100V,I =57ADS DR

 9.40. Size:356K  ncepower
nce0160ag.pdf

NCE0130A
NCE0130A

http://www.ncepower.com NCE0160AGNCE N-Channel Enhancement Mode Power MOSFET Description The NCE0160AG uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS = 100V,ID =60A RDS(ON)

 9.41. Size:739K  ncepower
nce01p13i.pdf

NCE0130A
NCE0130A

http://www.ncepower.comNCE01P13INCE P-Channel Enhancement Mode Power MOSFETDescriptionThe NCE01P13I uses advanced trench technology and designto provide excellent R with low gate charge. It can be usedDS(ON)in a wide variety of applications. It is ESD protested.General Features V =-100V,I =-13A Schematic diagramDS DR

 9.42. Size:425K  ncepower
nce0110as.pdf

NCE0130A
NCE0130A

Pb Free ProductNCE0110AShttp://www.ncepower.com NCE N-Channel Enhancement Mode Power MOSFET Description The NCE0110AS uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS = 100V,ID =10A Schematic diagram RDS(ON)

 9.43. Size:655K  ncepower
nce0157a.pdf

NCE0130A
NCE0130A

Pb Free Producthttp://www.ncepower.comNCE0157A2NCE N-Channel Enhancement Mode Power MOSFETDescriptionThe NCE0157A2 uses advanced trench technology anddesign to provide excellent R with low gate charge. ItDS(ON)can be used in a wide variety of applications.General Features V = 100V,I =57ADS DR

 9.44. Size:398K  ncepower
nce0107ak.pdf

NCE0130A
NCE0130A

Pb Free Producthttp://www.ncepower.com NCE0107AKNCE N-Channel Enhancement Mode Power MOSFET Description The NCE0107AK uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS = 100V,ID = 7A Schematic diagram RDS(ON)

 9.45. Size:458K  ncepower
nce01h13d.pdf

NCE0130A
NCE0130A

NCE01H13Dhttp://www.ncepower.com NCE N-Channel Enhancement Mode Power MOSFET Description The NCE01H13D uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =100V,ID =130A RDS(ON)

 9.46. Size:315K  ncepower
nce0157d.pdf

NCE0130A
NCE0130A

Pb Free Producthttp://www.ncepower.com NCE0157DNCE N-Channel Enhancement Mode Power MOSFET Description The NCE0157D uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS = 100V,ID =57A RDS(ON)

 9.47. Size:355K  ncepower
nce0117i.pdf

NCE0130A
NCE0130A

NCE0117Ihttp://www.ncepower.com NCE N-Channel Enhancement Mode Power MOSFET Description The NCE0117I uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =100V,ID =17A Schematic diagram RDS(ON)

 9.48. Size:483K  ncepower
nce01np03s.pdf

NCE0130A
NCE0130A

Pb Free ProductNCE01NP03Shttp://www.ncepower.com NCE N-Channel and P-Channel Enhancement Mode Power MOSFET Description The NCE01NP03S uses advanced trench technology to provide excellent RDS(ON) and low gate charge.This device is suitable for use in inverter and other applications. Genera Features Schematic diagram N-channel P-channel VDS = 100V,ID = 3A VDS = -100

 9.49. Size:316K  ncepower
nce01p30i.pdf

NCE0130A
NCE0130A

http://www.ncepower.com NCE01P30INCE P-Channel Enhancement Mode Power MOSFET Description The NCE01P30I uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. It is ESD protested. General Features VDS =-100V,ID =-30A Schematic diagram RDS(ON)

 9.50. Size:298K  ncepower
nce0104an.pdf

NCE0130A
NCE0130A

http://www.ncepower.com NCE0104ANNCE N-Channel Enhancement Mode Power MOSFET Description The NCE0104AN uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS=100V,ID=4A Schematic diagram RDS(ON)

 9.51. Size:430K  ncepower
nce01p18k.pdf

NCE0130A
NCE0130A

Pb Free Producthttp://www.ncepower.com NCE01P18KNCE P-Channel Enhancement Mode Power MOSFET Description The NCE01P18K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. It is ESD protested. General Features VDS =-100V,ID =-18A Schematic diagram RDS(ON)

 9.52. Size:346K  ncepower
nce0102b.pdf

NCE0130A
NCE0130A

http://www.ncepower.com NCE0102BNCE N-Channel Enhancement Mode Power MOSFET Description The NCE0102B uses advanced trench technology and Ddesign to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. GGeneral Features S VDS = 100V,ID = 1.8A RDS(ON)

 9.53. Size:359K  ncepower
nce0106r.pdf

NCE0130A
NCE0130A

Pb Free Producthttp://www.ncepower.com NCE0106RNCE N-Channel Enhancement Mode Power MOSFET Description The NCE0106R uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS = 100V,ID = 6A Schematic diagram RDS(ON)

 9.54. Size:341K  ncepower
nce01p30.pdf

NCE0130A
NCE0130A

Pb Free Producthttp://www.ncepower.com NCE01P30NCE P-Channel Enhancement Mode Power MOSFET Description The NCE01P30 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. It is ESD protested. General Features VDS =-100V,ID =-30A Schematic diagram RDS(ON)

 9.55. Size:436K  ncepower
nce0157ak.pdf

NCE0130A
NCE0130A

Pb Free Producthttp://www.ncepower.com NCE0157AKNCE N-Channel Enhancement Mode Power MOSFET Description The NCE0157AK uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS = 100V,ID =57A RDS(ON)

 9.56. Size:297K  ncepower
nce01p30l.pdf

NCE0130A
NCE0130A

http://www.ncepower.com NCE01P30LNCE P-Channel Enhancement Mode Power MOSFET Description The NCE01P30L uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. It is ESD protested. General Features VDS =-100V,ID =-30A Schematic diagram RDS(ON)

 9.57. Size:416K  ncepower
nce01h11.pdf

NCE0130A
NCE0130A

Pb Free Producthttp://www.ncepower.com NCE01H11NCE N-Channel Enhancement Mode Power MOSFET Description The NCE01H11 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =100V,ID =110A RDS(ON)

 9.58. Size:752K  ncepower
nce0140i2.pdf

NCE0130A
NCE0130A

http://www.ncepower.comNCE0140I2NCE N-Channel Enhancement Mode Power MOSFETDescriptionThe NCE0140I2 uses advanced trench technology anddesign to provide excellent R with low gate charge. ItDS(ON)can be used in a wide variety of applications.General Features V = 100V,I =40ADS DR

 9.59. Size:790K  ncepower
nce01p35k.pdf

NCE0130A
NCE0130A

http://www.ncepower.comNCE01P35KNCE P-Channel Enhancement Mode Power MOSFETDescriptionThe NCE01P35K uses advanced trench technology anddesign to provide excellent R with low gate charge. It canDS(ON)be used in a wide variety of applications.General Features V =-100V,I =-35A Schematic diagramDS DR

 9.60. Size:335K  ncepower
nce0157a2.pdf

NCE0130A
NCE0130A

Pb Free Producthttp://www.ncepower.com NCE0157A2NCE N-Channel Enhancement Mode Power MOSFET Description The NCE0157A2 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS = 100V,ID =57A RDS(ON)

 9.61. Size:307K  ncepower
nce01p13.pdf

NCE0130A
NCE0130A

NCE01P13http://www.ncepower.com NCE P-Channel Enhancement Mode Power MOSFET Description The NCE01P13 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. It is ESD protested. General Features VDS =-100V,ID =-13A Schematic diagram RDS(ON)

 9.62. Size:377K  ncepower
nce01h10.pdf

NCE0130A
NCE0130A

Pb Free Producthttp://www.ncepower.com NCE01H10NCE N-Channel Enhancement Mode Power MOSFET Description The NCE01H10 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS = 100V,ID =100A RDS(ON)

 9.63. Size:628K  ncepower
nce0140ak2.pdf

NCE0130A
NCE0130A

NCE0140AK2http://www.ncepower.comNCE N-Channel Enhancement Mode Power MOSFETDescriptionThe NCE0140AK2 uses advanced trench technology anddesign to provide excellent R with low gate charge. ItDS(ON)can be used in a wide variety of applications.General Features V = 100V,I =40A Schematic diagramDS DR

 9.64. Size:320K  ncepower
nce01h10d.pdf

NCE0130A
NCE0130A

Pb Free Producthttp://www.ncepower.com NCE01H10DNCE N-Channel Enhancement Mode Power MOSFET Description The NCE01H10D uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS = 100V,ID =100A RDS(ON)

 9.65. Size:325K  ncepower
nce01p30d.pdf

NCE0130A
NCE0130A

http://www.ncepower.com NCE01P30DNCE P-Channel Enhancement Mode Power MOSFET Description The NCE01P30D uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. It is ESD protested. General Features VDS =-100V,ID =-30A RDS(ON)

 9.66. Size:400K  ncepower
nce01p13k.pdf

NCE0130A
NCE0130A

Pb Free Producthttp://www.ncepower.com NCE01P13KNCE P-Channel Enhancement Mode Power MOSFET Description The NCE01P13K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. It is ESD protested. General Features VDS =-100V,ID =-13A Schematic diagram RDS(ON)

 9.67. Size:402K  ncepower
nce0140ka.pdf

NCE0130A
NCE0130A

Pb Free ProductNCE0140KAhttp://www.ncepower.com NCE N-Channel Enhancement Mode Power MOSFET Description The NCE0140KA uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS = 100V,ID =40A Schematic diagram RDS(ON)

 9.68. Size:363K  ncepower
nce0106z.pdf

NCE0130A
NCE0130A

Pb Free Producthttp://www.ncepower.com NCE0106ZNCE N-Channel Enhancement Mode Power MOSFET DDescription The NCE0106Z uses advanced trench technology and Gdesign to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. SGeneral Features Schematic diagram VDS = 100V,ID = 6A RDS(ON)

 9.69. Size:833K  cn vbsemi
nce0117.pdf

NCE0130A
NCE0130A

NCE0117www.VBsemi.twN-Channel 100-V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETV(BR)DSS (V) RDS(on) ()ID (A) 175 C Junction TemperatureRoHS0.092 at VGS = 10 V10018COMPLIANT Low Thermal Resistance Package 100 % Rg TestedAPPLICATIONS Isolated DC/DC ConvertersTO-220AB DGSG D SN-Channel MOSFETTop ViewABSOLUTE MAXI

 9.70. Size:318K  cn vbsemi
nce0108as.pdf

NCE0130A
NCE0130A

NCE0108ASwww.VBsemi.comN-Channel 100 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)a Qg (Typ.)Definition0.040 at VGS = 10 V 6.4 Extremely Low Qgd for Switching Losses100 23 nC0.047 at VGS = 8 V 5.5 100 % Rg Tested 100 % Avalanche Tested Compliant to RoHS Directive 2002/95/ECDAPPLICATIONSS

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