Справочник MOSFET. NCE0157A2

 

NCE0157A2 Даташит. Основные параметры и характеристики. Поиск аналогов


   Наименование прибора: NCE0157A2
   Тип транзистора: MOSFET
   Полярность: N
   Pd ⓘ - Максимальная рассеиваемая мощность: 170 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 100 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Id| ⓘ - Максимально допустимый постоянный ток стока: 57 A
   Tj ⓘ - Максимальная температура канала: 175 °C
   tr ⓘ - Время нарастания: 55 ns
   Cossⓘ - Выходная емкость: 320 pf
   Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.016 Ohm
   Тип корпуса: TO220
 

 Аналог (замена) для NCE0157A2

   - подбор ⓘ MOSFET транзистора по параметрам

 

NCE0157A2 Datasheet (PDF)

 ..1. Size:335K  ncepower
nce0157a2.pdfpdf_icon

NCE0157A2

Pb Free Producthttp://www.ncepower.com NCE0157A2NCE N-Channel Enhancement Mode Power MOSFET Description The NCE0157A2 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS = 100V,ID =57A RDS(ON)

 0.1. Size:631K  ncepower
nce0157a2d.pdfpdf_icon

NCE0157A2

Pb Free Producthttp://www.ncepower.comNCE0157A2DNCE N-Channel Enhancement Mode Power MOSFETDescriptionThe NCE0157A2D uses advanced trench technology anddesign to provide excellent R with low gate charge. ItDS(ON)can be used in a wide variety of applications.General Features V = 100V,I =57ADS DR

 6.1. Size:655K  ncepower
nce0157a.pdfpdf_icon

NCE0157A2

Pb Free Producthttp://www.ncepower.comNCE0157A2NCE N-Channel Enhancement Mode Power MOSFETDescriptionThe NCE0157A2 uses advanced trench technology anddesign to provide excellent R with low gate charge. ItDS(ON)can be used in a wide variety of applications.General Features V = 100V,I =57ADS DR

 6.2. Size:436K  ncepower
nce0157ak.pdfpdf_icon

NCE0157A2

Pb Free Producthttp://www.ncepower.com NCE0157AKNCE N-Channel Enhancement Mode Power MOSFET Description The NCE0157AK uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS = 100V,ID =57A RDS(ON)

Другие MOSFET... NCE0117I , NCE0125AI , NCE0125AK , NCE0130A , NCE0130KA , NCE0140K2 , NCE0140KA , NCE0157 , IRF3710 , NCE0157D , NCE01H10 , NCE01H10D , NCE01H11 , NCE01H13 , NCE01H21T , NCE01P03S , NCE01P13K .

History: CED07N65A | CSD25401Q3 | VS3615GE | WM02N50M | 2SK2210 | SM6F02NSF | IXTA86N20T

 

 
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